SOT23 NPN SILICON PLANAR
VHF/UHF TRANSISTOR
ISSUE 4 MARCH 2001
PARTMARKING DETAILS
BFQ31A S4
BFQ31AR S5
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
30
V
Collector-Emitter Voltage
V
CEO
15
V
Emitter-Base Voltage
V
EBO
3
V
Continuous Collector Current
I
C
100
mA
Base Current
I
B
50
mA
Power Dissipation at T
amb
=25C
P
tot
330
mW
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C).
PARAMETER
SYMBOL
BFQ31A
UNIT
CONDITIONS.
MIN.
MAX.
Collector-Base
Breakdown Voltage
V
(BR)CBO
30
V
I
C
=1.0
A, I
E
=0
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
15
V
I
C
=3mA, I
B
=0*
Emitter-Base
Breakdown Voltage
V
(BR)EBO
3
V
I
E
=10
A, I
C
=0
Collector Cut-Off
Current
I
CBO
0.01
A
V
CB
=15V, I
E
=0
Collector-Emitter
Saturation Voltage
V
CE(sat)
0.4
V
I
C
=10mA, I
B
=1mA
Base-Emitter
Saturation Voltage
V
BE(sat)
1.0
V
I
C
=10mA, I
B
=1mA
Static Forward Current
Transfer Ratio
h
FE
100
I
C
=3mA, V
CE
=1V
Transition
Frequency
f
T
600
MHz
I
C
=4mA, V
CE
=10V
f=100MHz
Output Capacitance
C
obo
1.7
pF
V
CB
=10V, f=1MHz
Input Capacitance
C
ibo
2.0
pF
V
CB
=0.5V, f=1MHz
Noise Figure
N
6.0
dB
I
C
=1mA, V
CE
=6V
R
s
=400
, f=60MHz
*Measured under pulsed conditions.
Spice parameter data is available upon request for this device
BFQ31A
C
B
E
TBA
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