DATA SHEET
Product specification
File under Discrete Semiconductors, SC14
September 1995
DISCRETE SEMICONDUCTORS
BFS17A
NPN 3 GHz wideband transistor
September 1995
2
Philips Semiconductors
Product specification
NPN 3 GHz wideband transistor
BFS17A
DESCRIPTION
NPN transistor in a plastic SOT23 package.
APPLICATIONS
It is intended for RF applications such as oscillators
in TV tuners.
PINNING
PIN
DESCRIPTION
1
base
2
emitter
3
collector
Fig.1 SOT23.
Marking code: E2p.
handbook, 2 columns
2
1
3
MSB003
Top view
QUICK REFERENCE DATA
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note to the Quick reference data and the Limiting values
1. T
s
is the temperature at the soldering point of the collector pin.
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
V
CBO
collector-base voltage
open emitter
-
25
V
V
CEO
collector-emitter voltage
open base
-
15
V
I
C
DC collector current
-
25
mA
P
tot
total power dissipation
up to T
s
= 70
C; note 1
-
300
mW
f
T
transition frequency
I
C
= 25 mA; V
CE
= 5 V; f = 500 MHz;
T
amb
= 25
C
2.8
-
GHz
G
UM
maximum unilateral power gain
I
C
= 14 mA; V
CE
= 10 V; f = 800 MHz
13.5
-
dB
F
noise figure
I
C
= 2 mA; V
CE
= 5 V; f = 800 MHz;
T
amb
= 25
C
2.5
-
dB
V
O
output voltage
d
im
=
-
60 dB; I
C
= 14 mA; V
CE
= 10 V;
R
L
= 75
; T
amb
= 25
C;
f
(p+q
-
r)
= 793.25 MHz
150
-
mV
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
collector-base voltage
open emitter
-
25
V
V
CEO
collector-emitter voltage
open base
-
15
V
V
EBO
emitter-base voltage
open collector
-
2.5
V
I
C
DC collector current
-
25
mA
I
CM
peak collector current
-
50
mA
P
tot
total power dissipation
up to T
s
= 70
C; note 1
-
300
mW
T
stg
storage temperature
-
65
+150
C
T
j
junction temperature
-
150
C
September 1995
3
Philips Semiconductors
Product specification
NPN 3 GHz wideband transistor
BFS17A
THERMAL CHARACTERISTICS
Note
1. T
s
is the temperature at the soldering point of the collector pin.
CHARACTERISTICS
T
j
= 25
C unless otherwise specified.
Notes
1. G
UM
is the maximum unilateral power gain, assuming S
12
is zero and
dB.
2. d
im
=
-
60 dB (DIN 45004B); I
C
= 14 mA; V
CE
= 10 V; R
L
= 75
; T
amb
= 25
C;
V
p
= V
O
; f
p
= 795.25 MHz;
V
q
= V
O
-
6 dB; f
q
= 803.25 MHz;
V
r
= V
O
-
6 dB; f
r
= 805.25 MHz;
measured at f
(p+q
-
r)
= 793.25 MHz.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-s
thermal resistance from junction to soldering point
up to T
s
= 70
C; note 1
260
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
CBO
collector cut-off current
I
E
= 0; V
CB
= 10 V
-
-
50
nA
h
FE
DC current gain
I
C
= 2 mA; V
CE
= 1 V; T
amb
= 25
C
25
90
-
I
C
= 25 mA; V
CE
= 1 V; T
amb
= 25
C
25
90
-
f
T
transition frequency
I
C
= 25 mA; V
CE
= 5 V; f = 500 MHz;
T
amb
= 25
C
-
2.8
-
GHz
C
c
collector capacitance
I
E
= 0; V
CB
= 10 V; f = 1 MHz;
T
amb
= 25
C
-
0.7
-
pF
C
e
emitter capacitance
I
C
= 0; V
EB
= 0.5 V; f = 1 MHz
-
1.25
-
pF
C
re
feedback capacitance
I
C
= 0; V
CE
= 5 V; f = 1 MHz
-
0.6
-
pF
G
UM
maximum unilateral power gain
note 1
I
C
= 14 mA; V
CE
= 10 V; f = 800 MHz
-
13.5
-
dB
F
noise figure
I
C
= 2 mA; V
CE
= 5 V; Z
S
= 60
;
f = 800 MHz; T
amb
= 25
C
-
2.5
-
dB
V
O
output voltage
note 2
-
150
-
mV
G
UM
10 log
S
21
2
1
S
11
2
1
S
22
2
--------------------------------------------------------------
=
September 1995
4
Philips Semiconductors
Product specification
NPN 3 GHz wideband transistor
BFS17A
Fig.2 Intermodulation distortion and second order intermodulation distortion test circuit.
L1 = L3 = 5
H Ferroxcube choke.
L2 = 3 turns 0.4 mm copper wire; winding pitch 1 mm; internal diameter 3 mm.
handbook, full pagewidth
MBB251
18
1.5 nF
10 k
L2
L1
1 nF
75
270
1 nF
L3
1.5 nF
1 nF
0.68 pF
3.3 pF
DUT
75
VCC
VBB
Fig.3
DC current gain as a function of
collector current.
V
CE
= 1 V; T
amb
= 25
C.
handbook, halfpage
0
100
50
0
10
30
MEA395
20
IC (mA)
hFE
Fig.4
Collector capacitance as a function of
collector-base voltage.
I
E
= 0; f = 1 MHz; T
amb
= 25
C.
handbook, halfpage
MEA903
0
1
0.5
0
4
8
12
16
VCB (V)
Cc
(pF)
September 1995
5
Philips Semiconductors
Product specification
NPN 3 GHz wideband transistor
BFS17A
Fig.5
Transition frequency as a function of
collector current.
V
CE
= 5 V; f = 500 MHz; T
amb
= 25
C.
handbook, halfpage
MEA904
0
0
1
2
3
4
20
40
IC (mA)
fT
(GHz)
Fig.6
Minimum noise figure as a function of
collector current.
V
CE
= 5 V; Z
s
= 60
; f = 800 MHz; T
amb
= 25
C.
handbook, halfpage
MEA902
0
5
0
1
2
3
4
10
20
F
(dB)
IC (mA)
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