C
SOT23 NPN SILICON PLANAR
RF TRANSISTORS
ISSUE 4 MARCH 2001
PARTMARKING DETAILS --
BFS17L - E1L
BFS17H - E1H
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
25
V
Collector-Emitter Voltage
V
CEO
15
V
Emitter-Base Voltage
V
EBO
2.5
V
Peak Pulse Current
I
CM
50
mA
Continuous Collector Current
I
C
25
mA
Power Dissipation at T
amb
=25C
P
tot
330
mW
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C).
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS.
Collector Cut-Off
Current
I
CBO
10
10
nA
A
V
CB
=10V, I
E
=0
V
CB
=10V, I
E
=0,
T
amb
= 100C
Static Forward Current
Transfer Ratio
h
FE
BFS17L
25
100
I
C
=2.0mA, V
CE
=1.0V
BFS17H
70
200
I
C
=2.0mA, V
CE
=1.0V
20
125
I
C
=25mA, V
CE
=1.0V
Transition
Frequency
f
T
1.0
1.3
GHz
GHz
I
C
=2.0mA, V
CE
=5.0V
f=500MHz
I
C
=25mA, V
CE
=5.0V
f=500MHz
Feedback Capacitance
-C
re
0.85
pF
I
C
=2.0mA, V
CE
=5V, f=1MHz
Output Capacitance
C
obo
1.5
pF
V
CB
=10V, f=1MHz
Input Capacitance
C
ibo
2.0
pF
V
EB
=0.5V, f=1MHz
Noise Figure
N
4.5
dB
I
C
=2.0mA, V
CE
=5.0V
R
S
=50
, f=500MHz
Intermodulation
Distortion
d
im
-45
dB
I
C
=10mA, V
CE
=6.0V
R
L
=37.5
,T
amb
=25C
V
o
=100mV at f
p
=183MHz
V
o
=100mV at f
q
=200MHz
measured at f
(2q-p)
=217MHz
BFS17L
BFS17H
B
E
Spice parameter data is available upon request for this device
TBA
PDF 
ZIP