C
B
E
SOT23
SOT23 NPN SILICON PLANAR
VHF TRANSISTOR
ISSUE 3 JANUARY 1996
7
PARTMARKING DETAIL G1
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
30
V
Collector-Emitter Voltage
V
CEO
20
V
Emitter-Base Voltage
V
EBO
4
V
Peak Pulse Current
I
CM
25
mA
Continuous Collector Current
I
C
25
mA
Power Dissipation at T
amb
=25C
P
tot
330
mW
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C).
PARAMETER
SYMBOL MIN.
TYP.
MAX. UNIT
CONDITIONS.
Collector Cut-Off
Current
I
CBO
100
10
nA
A
V
CB
=20V, I
E
=0
V
CB
=20V, I
E
=0,
T
amb
=100C
Base-Emitter Voltage
V
BE
740
900
mV
I
C
=7mA, V
CE
=10V*
Static Forward Current
Transfer Ratio
h
FE
40
85
I
C
=7mA, V
CE
=10V*
Transition Frequency
f
T
275
450
MHz
I
C
=5mA, V
CE
=10V
f=100MHz
Feedback Capacitance C
re
0.35
0.40
pF
I
C
=1mA, V
CE
=10V
f=1MHz
Collector Capacitance
C
TC
0.8
pF
I
E
=I
e
=0, V
CB
=10V
f=1MHz
* Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
3 - 53
BFS20
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