SOT23 P-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 3 - JANUARY 1996
PARTMARKING DETAIL MX
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Drain-Source Voltage
V
DS
-45
V
Continuous Drain Current at T
amb
=25C
I
D
-90
mA
Pulsed Drain Current
I
DM
-1.6
A
Gate Source Voltage
V
GS
20
V
Power Dissipation at T
amb
=25C
P
tot
330
mW
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Drain-Source
Breakdown Voltage
BV
DSS
-45
-70
V
I
D
=-100
A, V
GS
=0V
Gate-Source Threshold
Voltage
V
GS(th)
-1
-3.5 V
I
D
=-1mA, V
DS
= V
GS
Gate-Body Leakage
I
GSS
-20
nA
V
GS
=-15V, V
DS
=0V
Zero Gate Voltage Drain
Current
I
DSS
-0.5.
A
V
DS
=-25V, V
GS
=0V
Static Drain-Source On-State
Resistance (1)
R
DS(on)
9
14
V
GS
=-10V,I
D
=-200mA
Forward Transconductance
(1)(2)
g
fs
90
mS
V
DS
=-10V,I
D
=-200mA
Input Capacitance (2)
C
iss
25
pF
V
DS
=-10V, V
GS
=0V,
f=1MHz
Turn-On Delay Time (2)(3)
t
d(on)
10
ns
V
DD
-25V, I
D
=-200mA
Rise Time (2)(3)
t
r
10
ns
Turn-Off Delay Time (2)(3)
t
d(off)
10
ns
Fall Time (2)(3)
t
f
10
ns
(1) Measured under pulsed conditions. Width=300
s. Duty cycle
2% (2) Sample test.
(3) Switching times measured with 50
source impedance and <5ns rise time on a pulse generator
Spice parameter data is available upon request for this device
BS250F
D
G
S
SOT23
3 - 55
BS250F
3 - 57
BS250F
TYPICAL CHARACTERISTICS
Output Characteristics
V
DS
- Drain Source
Voltage (Volts)
I
D
-
D
r
a
i
n
C
u
r
r
e
nt (Amp
s
)
-0.8
-0.6
-0.4
0
-0.2
-1.0
Transfer Characteristics
Normalised R
DS(on)
and V
GS(th)
vs Temperature
Junction Temperature (C)
Nor
m
ali
s
e
d
R
DS(on)
a
nd V
G
S(
t
h
)
-40 -20
0
20 40 60 80
120
100
140 160
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.6
0.8
Dr
ai
n-
So
urc
e R
es
ista
nc
e
R
DS(
on
)
Gate Threshold Vo
ltage V
GS(TH)
I
D=
0.37A
0
-2
-4
-6
-8
-10
-1.0
-0.8
-0.6
-0.4
0
-0.2
0
-10
-20
-30
-40
-50
Saturation Characteristics
On-resistance vs Drain Current
I
D-
Drain Current
(mA)
-6
0
-2
-4
-8
0
-2
-4
-6
-8
-10
-10
V
DS-
Dra
i
n
Source
V
o
l
t
ag
e (
V
ol
t
s
)
R
D
S(on
)
-
D
r
ain
So
ur
ce
O
n
R
e
sistan
ce
(
)
Voltage Saturation Characteristics
V
GS-
Gate Source Voltage
(Volts)
-0.6
0
-0.2
-0.4
-0.8
0
-2
-4
-6
-8
-10
-1.0
V
GS=
-20V
-16V
-6V
-7V
-8V
-5V
-4V
-16V
-9V
I
D=
-
400mA
-200mA
-100mA
V
DS=-
10V
V
GS-
Gate Source
Voltage (Volts)
V
GS=
-10V
I
D=
-1mA
V
GS=
V
DS
-1.2
-10V
-9V
-10V
-6V
2.6
180
10
1
100
-10
-100
-1000
V
GS
=-5V
V
GS=
-20V
-15V
-20V
-7V
-6V
-7V
-8V
-10V
-12V
-5V
-4.5V
-14V
V
GS
=
-14V
-12V
I
D
- Drain Curre
n
t (
A
mps)
V
DS
- Drain Source
Voltage (Volts)
I
D(
O
n
)
-
On-Sta
t
e D
r
ain
C
urrent (Amp
s
)
TYPICAL CHARACTERISTICS
Transconductance v drain current
I
D
- Drain Current (Amps
)
g
fs
-T
r
an
sc
o
n
ducta
n
c
e
(
m
S)
80
60
40
0
20
100
0 -0.1 -0.2 -0.3 -0.4 -0.5 -0.6 -0.7 -0.8 -0.9 -1.0
-6
-8
-10
-14
-16
-12
-4
-2
0
0.5
1.0
1.5
0
Q-Gate Charge (nC)
120
Note:V
DS=
-10V
Transconductance v gate-source voltage
V
GS
-Gate Source Voltage (Volts)
g
f
s
-T
ransconductance (mS)
80
60
40
0
20
100
0 -1
-2
-3
-4
-5
-6
-7
-8
-9
-10
120
Note:V
DS=
-10V
40
30
20
0
10
50
60
0
-10
-20
-30
-40
-50
-60
-70
V
DS
-Drain Source Voltage (Volts)
Capacitance v drain-source voltage
C-Capa
c
ita
n
c
e
(
p
F
)
Note:V
GS=
0V
f=1MHz
C
iss
C
oss
C
rss
V
GS
-
Ga
te
So
ur
ce
V
o
l
t
age
(V
olts)
1
2
Gate charge v gate-source voltage
V
DS
=
-20V
Note:I
D=-
0.2A
-40V -60V
3 - 56
BS250F
3 - 57
BS250F
TYPICAL CHARACTERISTICS
Output Characteristics
V
DS
- Drain Source
Voltage (Volts)
I
D
-
D
r
a
i
n
C
u
r
r
e
nt (Amp
s
)
-0.8
-0.6
-0.4
0
-0.2
-1.0
Transfer Characteristics
Normalised R
DS(on)
and V
GS(th)
vs Temperature
Junction Temperature (C)
Nor
m
ali
s
e
d
R
DS(on)
a
nd V
G
S(
t
h
)
-40 -20
0
20 40 60 80
120
100
140 160
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.6
0.8
Dr
ai
n-
So
urc
e R
es
ista
nc
e
R
DS(
on
)
Gate Threshold Vo
ltage V
GS(TH)
I
D=
0.37A
0
-2
-4
-6
-8
-10
-1.0
-0.8
-0.6
-0.4
0
-0.2
0
-10
-20
-30
-40
-50
Saturation Characteristics
On-resistance vs Drain Current
I
D-
Drain Current
(mA)
-6
0
-2
-4
-8
0
-2
-4
-6
-8
-10
-10
V
DS-
Dra
i
n
Source
V
o
l
t
ag
e (
V
ol
t
s
)
R
D
S(on
)
-
D
r
ain
So
ur
ce
O
n
R
e
sistan
ce
(
)
Voltage Saturation Characteristics
V
GS-
Gate Source Voltage
(Volts)
-0.6
0
-0.2
-0.4
-0.8
0
-2
-4
-6
-8
-10
-1.0
V
GS=
-20V
-16V
-6V
-7V
-8V
-5V
-4V
-16V
-9V
I
D=
-
400mA
-200mA
-100mA
V
DS=-
10V
V
GS-
Gate Source
Voltage (Volts)
V
GS=
-10V
I
D=
-1mA
V
GS=
V
DS
-1.2
-10V
-9V
-10V
-6V
2.6
180
10
1
100
-10
-100
-1000
V
GS
=-5V
V
GS=
-20V
-15V
-20V
-7V
-6V
-7V
-8V
-10V
-12V
-5V
-4.5V
-14V
V
GS
=
-14V
-12V
I
D
- Drain Curre
n
t (
A
mps)
V
DS
- Drain Source
Voltage (Volts)
I
D(
O
n
)
-
On-Sta
t
e D
r
ain
C
urrent (Amp
s
)
TYPICAL CHARACTERISTICS
Transconductance v drain current
I
D
- Drain Current (Amps
)
g
fs
-T
r
an
sc
o
n
ducta
n
c
e
(
m
S)
80
60
40
0
20
100
0 -0.1 -0.2 -0.3 -0.4 -0.5 -0.6 -0.7 -0.8 -0.9 -1.0
-6
-8
-10
-14
-16
-12
-4
-2
0
0.5
1.0
1.5
0
Q-Gate Charge (nC)
120
Note:V
DS=
-10V
Transconductance v gate-source voltage
V
GS
-Gate Source Voltage (Volts)
g
f
s
-T
ransconductance (mS)
80
60
40
0
20
100
0 -1
-2
-3
-4
-5
-6
-7
-8
-9
-10
120
Note:V
DS=
-10V
40
30
20
0
10
50
60
0
-10
-20
-30
-40
-50
-60
-70
V
DS
-Drain Source Voltage (Volts)
Capacitance v drain-source voltage
C-Capa
c
ita
n
c
e
(
p
F
)
Note:V
GS=
0V
f=1MHz
C
iss
C
oss
C
rss
V
GS
-
Ga
te
So
ur
ce
V
o
l
t
age
(V
olts)
1
2
Gate charge v gate-source voltage
V
DS
=
-20V
Note:I
D=-
0.2A
-40V -60V
3 - 56
PDF 
ZIP