SOT223 PNP SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
ISSUE 3 AUGUST 1995
FEATURES
* High V
CEO
* Low saturation voltage
COMPLEMENTARY TYPE: BSP19
PARTMARKING DETAIL: BSP16
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
-350
V
Collector-Emitter Voltage
V
CEO
-300
V
Emitter-Base Voltage
V
EBO
-6
V
Peak Pulse Current
I
CM
-1
A
Continuous Collector Current
I
C
-0.5
A
Power Dissipation at T
amb
=25C
P
tot
2
W
Operating and Storage Temperature
Range
T
j
:T
stg
-55 to +150
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
PARAMETER
SYMBOL MIN.
MAX.
UNIT
CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
-350
V
I
C
=-100
A
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
-300
V
I
C
=-10mA
Emitter-Base Breakdown
Voltage
V
(BR)EBO
-5
V
I
E
=-100
A
Collector Cut-Off
Current
I
CBO
-1
A
V
CB
=-280V
Emitter Cut-Off Current
I
EBO
-20
A
V
EB
=-6V
Collector-Emitter
Saturation Voltage
V
CE(sat)
- 2.0
-0.5
V
V
I
C
=-50mA, I
B
=-5mA*
I
C
=-30mA, I
B
=-3mA*
Static Forward Current
Transfer Ratio
h
FE
30
120
I
C
=-50mA, V
CE
=-10V*
Transition Frequency
f
T
15
MHz
I
C
=-10mA, V
CE
=-10V*
f = 30MHz
Output Capacitance
C
obo
15
pF
V
CB
=-10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
For typical characteristics graphs see FMMTA92 datasheet.
BSP16
C
C
E
B
3 - 59
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