SOT223 NPN SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
ISSUE 3 FEBRUARY 1996
FEATURES
* High V
CEO
350V
* Low saturation voltage
COMPLEMENTARY TYPE BSP16
PARTMARKING DETAIL
BSP19
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
400
V
Collector-Emitter Voltage
V
CEO
350
V
Emitter-Base Voltage
V
EBO
5
V
Peak Pulse Current
I
CM
1
A
Continuous Collector Current
I
C
0.5
A
Power Dissipation at T
amb
=25C
P
tot
2
W
Operating and Storage Temperature
Range
T
j
:T
stg
-55 to +150
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
PARAMETER
SYMBOL MIN.
TYP.
MAX.
UNIT
CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
400
V
I
C
=100
A
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
350
V
I
C
=10mA*
Emitter-Base
Breakdown Voltage
V
(BR)EBO
5
V
I
E
=100
A
Collector Cut-Off
Current
I
CBO
20
nA
V
CB
=300V
Emitter Cut-Off Current I
EBO
0.1
A
V
EB
=3V
Collector-Emitter
Saturation Voltage
V
CE(sat)
0.5
V
I
C
=50mA, I
B
=4mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
1.3
V
I
C
=50mA, I
B
=4mA*
Static Forward Current
Transfer Ratio
h
FE
40
50
I
C
=20mA, V
CE
=5V*
I
C
=100mA, V
CE
=5V*
Transition Frequency
f
T
70
MHz
I
C
=10mA, V
CE
=10V
f = 20MHz
Output Capacitance
C
obo
10
pF
V
CB
=20V, f=1MHz
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
Spice parameter data is available upon request for this device
For typical characteristics graphs see FZT658 datasheet.
BSP19
C
C
E
B
3 - 60
PDF 
ZIP