Issue 4 - May 2006
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Zetex Semiconductors plc 2006
BSP75G
60V self-protected low-side IntelliFET
TM
MOSFET switch
Summary
Continuous drain source voltage
V
DS
=60V
On-state resistance
550m
Nominal load current
1.4A (V
IN
= 5V)
Clamping energy
550mJ
Ordering information
Device marking
BSP75G
Description
Self-protected low side MOSFET. Monolithic over temperature, over
current, over voltage (active clamp) and ESD protected logic level
power MOSFET intended as a general purpose switch.
Features
Short circuit protection with auto restart
Over-voltage protection (active clamp)
Thermal shutdown with auto restart
Over-current protection
Input protection (ESD)
High continuous current rating
Load dump protection (actively protects load)
Logic level input
Note:
The tab is connected to the drain pin, and must
be electrically isolated from the source pin.
Connection of significant copper to the tab is
recommended for best thermal performance.
Device
Reel size
(inches)
Tape width
(mm)
Quantity per reel
BSP75GTA
7
12mm embossed
1,000
BSP75GTC
13
12mm embossed
4,000
SOT223
D
S
D
IN
BSP75G
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Functional block diagram
Applications
Especially suited for loads with a high in-rush current such as lamps and motors.
All types of resistive, inductive and capacitive loads in switching applications.
C compatible power switch for 12V and 24V DC applications.
Automotive rated.
Replaces electromechanical relays and discrete circuits.
Linear mode capability - the current-limiting protection circuitry is designed to de-activate at
low Vds, in order not to compromise the load current during normal operation. The design
maximum DC operating current is therefore determined by the thermal capability of the
package/board combination, rather than by the protection circuitry.
S
Over voltage
protection
Over current
protection
Over temperature
protection
Logic
Human body
ESD protection
D
IN
dV/dt
limitation
BSP75G
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Absolute maximum ratings
NOTES:
(a) For a device surface mounted on 37mm x 37mm x 1.6mm FR4 board with a high coverage of single sided 2oz weight
copper.
(b) For a device surface mounted on FR4 board and measured at t<=10s.
(c) For a device mounted on FR4 board with the minimum copper required for electrical connections.
Parameter
Symbol
Limit
Unit
Continuous drain-source voltage
V
DS
60
V
Drain-source voltage for short circuit protection
V
DS(SC)
36
V
Continuous input voltage
V
IN
-0.2 ... +10
V
Peak input voltage
V
IN
-0.2 ... +20
V
Operating temperature range
T
j
,
-40 to +150
C
Storage temperature range
T
stg
-55 to +150
C
Power dissipation at T
A
=25
C
(a)
P
D
2.5
W
Continuous drain current @ V
IN
=10V; T
A
=25C
(a)
I
D
1.6
A
Continuous drain current @ V
IN
=5V; T
A
=25C
(a)
I
D
1.4
A
Pulsed drain current @ V
IN
=10V
I
DM
5
A
Continuous source current (body diode)
(a)
I
S
3
A
Pulsed source current (body diode)
I
S
5
A
Unclamped single pulse inductive energy
E
AS
550
mJ
Load dump protection
V
LoadDump
80
V
Electrostatic discharge (human body model)
V
ESD
4000
V
DIN humidity category, DIN 40 040
E
IEC climatic category, DIN IEC 68-1
40/150/56
Thermal resistance
Parameter
Symbol
Limit
Unit
Junction to ambient
(a)
R
JA
50
C/W
Junction to ambient
(b)
R
JA
24
C/W
Junction to ambient
(c)
R
JA
208
C/W
BSP75G
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Characteristics
BSP75G
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Electrical characteristics (at Tamb = 25C unless otherwise stated)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
Static characteristics
Drain-source clamp voltage
V
DS(AZ)
60
70
75
V
I
D
=10mA
Off-state drain current
I
DSS
0.1
3
A
V
DS
=12V, V
IN
=0V
Off-state drain current
I
DSS
3
15
A
V
DS
=32V, V
IN
=0V
Input threshold voltage
(*)
NOTES:
(*) Protection features may operate outside spec for V
IN
<4.5V.
V
IN(th)
1
2.1
V
V
DS
=V
GS
, I
D
=1mA
Input current
I
IN
0.7
1.2
mA
V
IN
=+5V
Input current
I
IN
1.5
2.7
mA
V
IN
=+7V
Input current
I
IN
4
7
mA
V
IN
=+10V
Static drain-source on-state
resistance
R
DS(on)
520
675
m
V
IN
=+5V, I
D
=0.7A
Static drain-source on-state
resistance
R
DS(on)
385
550
m
V
IN
=+10V, I
D
=0.7A
Current limit
()
() The drain current is limited to a reduced value when V
DS
exceeds a safe level.
I
D(LIM)
0.7
1.1
1.75
A
V
IN
=+5V, V
DS
>5V
Current limit
()
I
D(LIM)
2
3
4
A
V
IN
=+10V, V
DS
>5V
Dynamic characteristics
Turn-on time (V
IN
to 90% I
D
)
t
on
2.2
10
s
R
L
=22 , V
DD
=12V,
V
IN
=0 to +10V
Turn-off time (V
IN
to 90% I
D
)
t
off
13
20
s
R
L
=22 , V
DD
=12V,
V
IN
=+10V to 0V
Slew rate on (70 to 50% V
DD
)
-dV
DS
/dt
on
10
20
V/ s
R
L
=22 , V
DD
=12V,
V
IN
=0 to +10V
Slew rate off (50 to 70% V
DD
)
dV
DS
/dt
off
3.2
10
V/ s
R
L
=22 , V
DD
=12V,
V
IN
=+10V to 0V
Protection functions
()
() Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
datasheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not designed
for continuous, repetitive operation.
Required input voltage for
over temperature protection
V
PROT
4.5
V
Thermal overload trip
temperature
T
JT
150
175
C
Thermal hysteresis
10
C
Unclamped single pulse
inductive energy Tj=25
C
E
AS
550
mJ
I
D(ISO)
=0.7A, V
DD
=32V
Unclamped single pulse
inductive energy Tj=150
C
E
AS
200
mJ
I
D(ISO)
=0.7A, V
DD
=32V
Inverse diode
Source drain voltage
V
SD
1
V
IN
=0V, -I
D
=1.4A
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