SOT89 PNP SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 4 MARCH 2001
COMPLEMENTARY TYPE
BSR43
PARTMARKING DETAILS
BR4
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
-90
V
Collector-Emitter Voltage
V
CEO
-80
V
Emitter-Base Voltage
V
EBO
-5
V
Peak Pulse Current
I
CM
-2
A
Continuous Collector Current
I
C
-1
A
Power Dissipation at T
amb
=25C
P
TOT
1
W
Operating and Storage Temperature Range
T
j
:T
stg
-65 to +150
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
MAX.
UNIT
CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
-90
V
I
C
=-100
A
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
-80
V
I
C
=-10mA
Emitter-Base
Breakdown Voltage
V
(BR)EBO
-5
V
I
E
=-10
A
Collector Cut-Off Current
I
CBO
-100
-50
nA
A
V
CB
=-60V
V
CB
=-60V, T
amb
=125C
Collector-Emitter
Saturation Voltage
V
CE(sat)
-0.25
-0.5
V
V
I
C
=-150mA, I
B
=-15mA*
I
C
=-500mA, I
B
=-50mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
-1.0
-1.2
V
V
I
C
=-150mA, I
B
=-15mA*
I
C
=-500mA, I
B
=-50mA*
Static Forward Current
Transfer Ratio
h
FE
30
100
50
300
I
C
=-100
A, V
CE
=-5V*
I
C
=-100mA, V
CE
=-5V*
I
C
=-500mA, V
CE
=-5V*
Output Capacitance
C
obo
20
pF
V
CB
=-10V, f =1MHz
Input Capacitance
C
ibo
120
pF
V
EB
=-0.5V, f =1MHz
Transition Frequency
f
T
100
MHz
I
C
=-50mA, V
CE
=-10V
f =35MHz
Turn-On Time
T
on
500
ns
V
CC
=-20V, I
C
=-100mA
I
B1
=-I
B2
=-5mA
Turn-Off Time
T
off
650
ns
*Measured under pulsed conditions.
Spice parameter data is available upon request for this device
BSR33
C
C
B
E
SOT89
TBA
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