SOT89 NPN SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 3 FEBRUARY 1996
COMPLEMENTARY TYPE
BSR32
PARTMARKING DETAIL
AR3
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
90
V
Collector-Emitter Voltage
V
CEO
80
V
Emitter-Base Voltage
V
EBO
5
V
Peak Pulse Current
I
CM
2
A
Continuous Collector Current
I
C
1
A
Base Current
I
B
100
mA
Power Dissipation at T
amb
=25C
P
tot
1
W
Operating and Storage Temperature Range
T
j
:T
stg
-65 to +150
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
MAX.
UNIT
CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
90
V
I
C
=100
A
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
80
V
I
C
=10mA
Emitter-Base
Breakdown Voltage
V
(BR)EBO
5
V
I
E
=10
A
Collector Cut-Off
Current
I
CBO
100
50
nA
A
V
CB
=60V
V
CB
=60V, T
amb
=125C
Collector-Emitter
Saturation Voltage
V
CE(sat)
0.25
0.5
V
V
I
C
=150mA, I
B
=15mA
I
C
=500mA, I
B
=50mA
Base-Emitter
Saturation Voltage
V
BE(sat)
1.0
1.2
V
V
I
C
=150mA, I
B
=15mA
I
C
=500mA, I
B
=50mA
Static Forward
Current Transfer Ratio
h
FE
10
40
30
120
I
C
=100
A, V
CE
=5V
I
C
=100mA, V
CE
=5V
I
C
=500mA, V
CE
=5V
Output Capacitance
C
obo
12
pF
V
CB
=10V, f =1MHz
Input Capacitance
C
ibo
90
pF
V
EB
=0.5V, f=1MHz
Transition Frequency
f
T
100
MHz
I
C
=50mA, V
CE
=10V
f =35MHz
Turn-On Time
T
on
250
ns
V
CC
=20V, I
C
=100mA
I
B1
=-I
B2
=-5mA
Turn-Off Time
T
off
1000
ns
*Measured under pulsed conditions.
For typical characteristics graphs see FMMT493 datasheet.
BSR42
C
C
B
E
TBA
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