SOT23
SOT23 N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 3 JANUARY 1996
7
PARTMARKING DETAIL
SA
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Drain-Source Voltage
V
DS
100
V
Drain-Gate Voltage
V
DGR
100
V
Continuous Drain Current at T
amb
=25C
I
D
170
mA
Pulsed Drain Current
I
DM
680
mA
Gate-Source Voltage
V
GS
20
V
Peak Gate-Source Voltage
V
GSM
20
V
Power Dissipation at T
amb
=25C
P
tot
360
mW
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
MIN.
MAX. UNIT
CONDITIONS.
Drain-Source
Breakdown Voltage
BV
DSS
100
V
I
D
=0.25mA, V
GS
=0V
Gate-Source Threshold
Voltage
V
GS(th)
0.8
2.2
2.8
V
I
D
=1mA, V
DS
= V
GS
Gate-Body Leakage
I
GSS
10
50
nA
V
GS
=
20V, V
DS
=0V
Zero Gate Voltage
Drain Current
I
DSS
1
2
15
60
10
A
A
nA
V
DS
=100V, V
GS
=0V
V
DS
=100V, V
GS
=0V, T=125C
(2)
V
DS
=20V, V
GS
=0V
Static Drain-Source
On-State Resistance (1)
R
DS(on)
5
6
V
GS
=10V, I
D
=100mA
Forward
Transconductance(1)(2)
g
fs
80
120
mS
V
DS
=25V, I
D
=100mA
Input Capacitance (2)
C
iss
20
pF
V
DS
=25V, V
GS
=0V, f=1MHz
Common Source
Output Capacitance (2)
C
oss
9
pF
Reverse Transfer
Capacitance (2)
C
rss
4
pF
Turn-On Delay Time (2)(3)
t
d(on)
10
ns
V
DD
30V, I
D
=280mA
Rise Time (2)(3)
t
r
10
ns
Turn-Off Delay Time (2)(3)
t
d(off)
15
ns
Fall Time (2)(3)
t
f
25
ns
(1) Measured under pulsed conditions. Width=300
s. Duty cycle
2% (2) Sample test.
(3) Switching times measured with 50
source impedance and <5ns rise time on a pulse generator
For typical characteristics graphs see ZVN3310F datasheet.
BSS123
D
G
S
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