SOT23 N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 3 MARCH 1996
7
PARTMARKING DETAIL
SS
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Drain-Source Voltage
V
DS
50
V
Continuous Drain Current at T
amb
=25C
I
D
200
mA
Pulsed Drain Current
I
DM
800
mA
Gate-Source Voltage
V
GS
20
V
Power Dissipation at T
amb
=25C
P
tot
360
mW
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
PARAMETER
SYMBOL MIN.
MIN.
MAX. UNIT CONDITIONS.
Drain-Source
Breakdown Voltage
BV
DSS
50
V
I
D
=0.25mA, V
GS
=0V
Gate-Source Threshold
Voltage
V
GS(th)
0.5
1.5
V
I
D
=1mA, V
DS
= V
GS
Gate-Body Leakage
I
GSS
100
nA
V
GS
=
20V, V
DS
=0V
Zero Gate Voltage
Drain Current
I
DSS
0.5
5
100
A
A
nA
V
DS
=50V, V
GS
=0
V
DS
=50V, V
GS
=0V, T=125C
(2)
V
DS
=20V, V
GS
=0
Static Drain-Source
On-State Resistance (1)
R
DS(on)
3.5
V
GS
=5V,I
D
=200mA
Forward
Transconductance(1)(2)
g
fs
120
mS
V
DS
=25V,I
D
=200mA
Input Capacitance (2)
C
iss
50
pF
V
DS
=25V, V
GS
=0V, f=1MHz
Common Source
Output Capacitance (2)
C
oss
25
pF
Reverse Transfer
Capacitance (2)
C
rss
8
pF
Turn-On Delay Time (2)(3)
t
d(on)
10
ns
V
DD
30V, I
D
=280mA
Rise Time (2)(3)
t
r
10
ns
Turn-Off Delay Time (2)(3)
t
d(off)
15
ns
Fall Time (2)(3)
t
f
25
ns
(1) Measured under pulsed conditions. Width=300
s. Duty cycle
2% (2) Sample test.
(3) Switching times measured with 50
source impedance and <5ns rise time on a pulse generator
BSS138
D
G
S
SOT23
3 - 72
0
0.8
1.2
1.6
T-Temperature ( C)
Nor
m
a
l
i
s
e
d
R
D
S
(o
n)
And
V
GS
(
t
h
)
0
R
DS(on)
AT
V
GS(th)
AT
1.0
1.0
10
0.1
I
D
-Drain Current (Amperes)
R
D
S
(
on)
-
D
r
ai
n So
urc
e
O
n
Re
s
i
s
t
a
n
c
e
(Ohm
s
)
0.01
100
I
D
-Drain Current (Amperes)
0
100
200
300
400
500
g
fs
-F
orwa
rd T
ran
s
c
ondu
ctan
c
e
(m
S)
0
0.2
0.4
0.6
0.8
1.0
0
2
4
0
100
200
300
400
500
g
fs
-F
orwa
rd T
r
a
n
s
c
ondu
ctan
c
e
(m
S)
V
GS
-Gate Source Voltage (Volts)
1
10
100
0.1
100
V
DS
-Drain Source Voltage (Volts)
C
-Ca
pa
cita
nce
(pF
)
NOTE:-V
GS
=0V
C
iss
C
oss
C
rss
Typical On Resistance vs.
Drain Current
6
8
10
0
1
2
3
4
5
0
0.2
0.4
0.6
0.8
1.0
V
DS
-Drain Source Voltage (Volts)
I
DS
-Dra
i
n
S
ource
C
urre
nt
(A)
Saturation Characteristics
Typical Transconductance vs.
Drain Current
Typical Transconductance vs.
Gate - Source Voltage
Typical Capacitance vs.
Drain - Source Voltage
Normalised R
DS(on)
And V
GS(th)
vs. Temperature
V
GS
=10V
5V
4.5V
4V
3.5V
3V
2.5V
2V
3V 3.5V
5V
4V
7V
10V
V
GS
=2.5V
V
DS
=25V
80
s Pulsed Test
V
DS
=25V
80
s Pulsed Test
C
iss
C
oss
C
rss
V
GS
=5V
0.6
1.0
1.4
1.8
-40
40
80
120
160
1
10
80
s Pulsed Test
F=1MHz
I
D
=200mA
I
D
=1mA
V
DS
=V
GS
TYPICAL CHARACTERISTICS
0
0
2
4
6
8
10
12
14
Q-Charge (nC)
V
GS
-G
ate
-
S
o
u
r
c
e
V
o
lt
age
(
V
o
l
t
s
)
V
DD
=20V
0
1
2
3
4
5
0
0.2
0.4
0.6
0.8
1.0
100
A
1mA
10mA
100mA
1A
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
I
DS
- Drain Source Current
V
SD
-
So
urce
Dr
a
i
n
V
o
l
t
a
g
e
(
V
)
V
GS
- Gate Source Voltage (V)
I
DS
-
Drain
S
o
urce
Curr
e
n
t
(
A
)
Typical Diode Forward Voltage
Typical Transfer Characteristics
Typical Gate Charge vs.
Gate-Source Voltage
30V
50V
I
D
=200mA
80
s Pulsed Test
V
DS
=10V
80
s Pulsed Test
V
GS
=0
0.2
0.4
0.6
0.8
1.0
1.2
TYPICAL CHARACTERISTICS
BSS138
BSS138
3 - 73
3 - 74
0
0.8
1.2
1.6
T-Temperature ( C)
Nor
m
a
l
i
s
e
d
R
D
S
(o
n)
And
V
GS
(
t
h
)
0
R
DS(on)
AT
V
GS(th)
AT
1.0
1.0
10
0.1
I
D
-Drain Current (Amperes)
R
D
S
(
on)
-
D
r
ai
n So
urc
e
O
n
Re
s
i
s
t
a
n
c
e
(Ohm
s
)
0.01
100
I
D
-Drain Current (Amperes)
0
100
200
300
400
500
g
fs
-F
orwa
rd T
ran
s
c
ondu
ctan
c
e
(m
S)
0
0.2
0.4
0.6
0.8
1.0
0
2
4
0
100
200
300
400
500
g
fs
-F
orwa
rd T
r
a
n
s
c
ondu
ctan
c
e
(m
S)
V
GS
-Gate Source Voltage (Volts)
1
10
100
0.1
100
V
DS
-Drain Source Voltage (Volts)
C
-Ca
pa
cita
nce
(pF
)
NOTE:-V
GS
=0V
C
iss
C
oss
C
rss
Typical On Resistance vs.
Drain Current
6
8
10
0
1
2
3
4
5
0
0.2
0.4
0.6
0.8
1.0
V
DS
-Drain Source Voltage (Volts)
I
DS
-Dra
i
n
S
ource
C
urre
nt
(A)
Saturation Characteristics
Typical Transconductance vs.
Drain Current
Typical Transconductance vs.
Gate - Source Voltage
Typical Capacitance vs.
Drain - Source Voltage
Normalised R
DS(on)
And V
GS(th)
vs. Temperature
V
GS
=10V
5V
4.5V
4V
3.5V
3V
2.5V
2V
3V 3.5V
5V
4V
7V
10V
V
GS
=2.5V
V
DS
=25V
80
s Pulsed Test
V
DS
=25V
80
s Pulsed Test
C
iss
C
oss
C
rss
V
GS
=5V
0.6
1.0
1.4
1.8
-40
40
80
120
160
1
10
80
s Pulsed Test
F=1MHz
I
D
=200mA
I
D
=1mA
V
DS
=V
GS
TYPICAL CHARACTERISTICS
0
0
2
4
6
8
10
12
14
Q-Charge (nC)
V
GS
-G
ate
-
S
o
u
r
c
e
V
o
lt
age
(
V
o
l
t
s
)
V
DD
=20V
0
1
2
3
4
5
0
0.2
0.4
0.6
0.8
1.0
100
A
1mA
10mA
100mA
1A
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
I
DS
- Drain Source Current
V
SD
-
So
urce
Dr
a
i
n
V
o
l
t
a
g
e
(
V
)
V
GS
- Gate Source Voltage (V)
I
DS
-
Drain
S
o
urce
Curr
e
n
t
(
A
)
Typical Diode Forward Voltage
Typical Transfer Characteristics
Typical Gate Charge vs.
Gate-Source Voltage
30V
50V
I
D
=200mA
80
s Pulsed Test
V
DS
=10V
80
s Pulsed Test
V
GS
=0
0.2
0.4
0.6
0.8
1.0
1.2
TYPICAL CHARACTERISTICS
BSS138
BSS138
3 - 73
3 - 74
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