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Электронный компонент: BST39

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SOT89 NPN SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
ISSUE 4 JUNE 1996
7
FEATURES
*
Fast Switching
*
High h
FE
.
COMPLEMENTARY TYPE
BST16
PARTMAKING DETAIL
AT1
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
400
V
Collector-Emitter Voltage
V
CEO
350
V
Emitter-Base Voltage
V
EBO
5
V
Peak Pulse Current
I
CM
1
A
Continuous Collector Current
I
C
500
mA
Power Dissipation at T
amb
=25C
P
tot
1
W
Operating and Storage Temperature Range
T
j
:T
stg
-65 to +150
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
MAX.
UNIT
CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
400
V
I
C
=10
A
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
350
V
I
C
=1mA*
Emitter-Base
Breakdown Voltage
V
(BR)EBO
5
V
I
E
=10
A
Collector Cut-Off Current
I
CBO
20
nA
V
CB
=300V
Collector-Emitter
Saturation Voltage
V
CE(sat)
0.5
V
I
C
=50mA, I
B
=4mA
Base-Emitter
Saturation Voltage
V
BE(sat)
1.3
V
I
C
=50mA, I
B
=4mA
Static Forward Current
Transfer Ratio
h
FE
40
I
C
=20mA, V
CE
=10V*
Output Capacitance
C
obo
2
pF
V
CB
=10V, f=1MHz
Input Capacitance
C
ibo
20
pF
V
EB
=10V, f=1MHz
Transition Frequency
f
T
70
MHz
I
C
=10mA, V
CE
=10V,
f=5MHz
* Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
For typical characteristics graphs see FMMT458 datasheet.
BST39
C
C
B
E
SOT89
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