SOT89 PNP SILICON PLANAR
DARLINGTON TRANSISTOR
ISSUE 3 JANUARY 1996
7
FEATURES
*
Fast Switching
*
High h
FE
PARTMAKING DETAIL --
627
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
-85
V
Collector-Emitter Voltage
V
CEO
-72
V
Emitter-Base Voltage
V
EBO
-10
V
Pea Pulse Current
I
CM
-1.5
A
Continuous Collector Current
I
C
-500
mA
Base Current
I
B
-100
mA
Power Dissipation at T
amb
=25C
P
tot
1
W
Operating and Storage Temperature Range
T
j
:T
stg
-65 to +150
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
MAX.
UNIT
CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
-85
V
I
C
=-10
A, I
E
=0
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
-72
V
I
C
=-10mA, I
B
=0*
Emitter-Base Breakdown
Voltage
V
(BR)EBO
-10
V
I
E
=-10
A, I
C
=0
Emitter Cut-Off Current
I
EBO
-10
A
V
EB
=-8V, I
E
=0
Collector-Emitter
Cut-Off Current
I
CES
-10
A
V
CE
=-72V, I
C
=0
Collector-Emitter
Saturation Voltage
V
CE(sat)
-1.3
-1.3
V
V
I
C
=-500mA, I
B
=-0.5mA
I
C
=-500mA, I
B
=-0.5mA
T
j
=150C
Base-Emitter
Saturation Voltage
V
BE(sat)
-1.9
V
I
C
=-500mA, I
B
=-0.5mA
Static Forward Current
Transfer Ratio
h
FE
1K
2K
I
C
=-150mA, V
CE
=-10V*
I
C
=-500mA, V
CE
=-10V*
Turn On Time
t
on
400 Typical
ns
I
C
=-500mA
I
Bon
=I
Boff
=-0.5mA
Turn Off Time
t
off
1.5K Typical
ns
* Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
For typical characteristics graphs see FZTA63 (SOT223) datasheet.
SOT89
BST62-70
C
C
B
E
3 - 82
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