SOT89 NPN SILICON POWER
(SWITCHING) TRANSISTOR
ISSSUE 2 - DECEMBER 1998
FEATURES
*
2W POWER DISSIPATION
*
20A Peak Pulse Current
*
Excellent H
FE
Characteristics up to 20 Amps
*
Extremely Low Saturation Voltage E.g. 25mv Typ.
*
Extremely Low Equivalent On-resistance;
R
CE(sat)
40m
at 4A
Complimentary Type -
FCX1147A
Partmarking Detail -
047
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
35
V
Collector-Emitter Voltage
V
CEO
10
V
Emitter-Base Voltage
V
EBO
5
V
Peak Pulse Current **
I
CM
20
A
Continuous Collector Current
I
C
4
A
Power Dissipation at T
amb
=25C
P
tot
1
2
W
W
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
C
recommended P
tot
calculated using FR4 measuring 15x15x0.6mm
Maximum power dissipation is calculated assuming that the device is mounted on FR4
substrate measuring 40x40x0.6mm and using comparable measurement methods adopted by
other suppliers.
**Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
Spice parameter data is available upon request for these devices
Refer to the handling instructions for soldering surface mount components.
C
B
C
E
FCX1047A
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
PARAMETER
SYMBOL
Min
Typ
Max
UNIT
CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
35
V
I
C
=100
A
Collector-Emitter
Breakdown Voltage
V
CES
35
V
I
C
=100
A
Collector-Emitter
Breakdown Voltage
V
CEO
10
V
I
C
=10mA
Collector-Emitter
Breakdown Voltage
V
CEV
35
V
I
C
=100
A, V
EB
=1V
Emitter-Base
Breakdown Voltage
V
(BR)EBO
5
V
I
E
=100
A
Collector Cut-Off Current
I
CBO
0.3
10
nA
V
CB
=20V
Emitter Cut-Off Current
I
EBO
0.3
10
nA
V
EB
=4V
Collector Emitter Cut-Off
Current
I
CES
0.3
10
nA
V
CES
=20V
Collector-Emitter
Saturation Voltage
V
CE(sat)
25
50
140
160
220
40
70
200
240
350
mV
mV
mV
mV
mV
I
C
=0.5A, I
B
=10mA*
I
C
=1A, I
B
=10mA*
I
C
=3A, I
B
=15mA*
I
C
=4A, I
B
=50mA*
I
C
=5A, I
B
=25mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
920
1000
mV
I
C
=4A, I
B
=50mA*
Base-Emitter Turn-On
Voltage
V
BE(on)
860
950
mV
I
C
=4A, V
CE
=2V*
Static Forward Current
Transfer Ratio
h
FE
280
290
300
200
200
60
430
440
450
350
330
110
1200
I
C
=10mA, V
CE
=2V*
I
C
=0.5A, V
CE
=2V*
I
C
=1A, V
CE
=2V*
I
C
=4A, V
CE
=2V*
I
C
=5A, V
CE
=2V*
I
C
=20A, V
CE
=2V*
Transition Frequency
f
T
150
MHz
I
C
=50mA, V
CE
=10V
f=50MHz
Output Capacitance
C
obo
85
pF
V
CB
=10V, f=1MHz
Switching Times
t
on
130
ns
I
C
=4A, I
B
=40mA, V
CC
=10V
t
off
230
ns
I
C
=4A, I
B
=
40mA,
V
CC
=10V
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
FCX1047A
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