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Электронный компонент: FCX1051A

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SOT89 NPN SILICON POWER
(SWITCHING) TRANSISTOR
ISSSUE 1 - DECEMBER 1998
FEATURES
*
2W POWER DISSIPATION
*
10A Peak Pulse Current
*
Excellent H
FE
Characteristics up to 10 Amps
*
Extremely Low Saturation Voltage E.g. 17mv Typ.
*
Extremely Low Equivalent On-resistance;
R
CE(sat)
57m
at 3A
Complimentary Type -
FCX1151A
Partmarking Detail -
051
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
150
V
Collector-Emitter Voltage
V
CEO
40
V
Emitter-Base Voltage
V
EBO
5
V
Peak Pulse Current **
I
CM
10
A
Continuous Collector Current
I
C
3
A
Power Dissipation at T
amb
=25C
P
tot
1
2
W
W
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
C
recommended P
tot
calculated using FR4 measuring 15x15x0.6mm
Maximum power dissipation is calculated assuming that the device is mounted on FR4
substrate measuring 40x40x0.6mm and using comparable measurement methods adopted by
other suppliers.
**Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
Spice parameter data is available upon request for these devices.
Refer to the handling instructions for soldering surface mount components.
C
B
C
E
FCX1051A
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
PARAMETER
SYMBOL
Min
Typ
Max
UNIT
CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
150
V
I
C
=100
A
Collector-Emitter
Breakdown Voltage
V
CES
150
V
I
C
=100
A
Collector-Emitter
Breakdown Voltage
V
CEO
40
V
I
C
=10mA
Collector-Emitter
Breakdown Voltage
V
CEV
150
V
I
C
=100
A, V
EB
=1V
Emitter-Base
Breakdown Voltage
V
(BR)EBO
5
V
I
E
=100
A
Collector Cut-Off Current
I
CBO
0.3
10
nA
V
CB
=120V
Emitter Cut-Off Current
I
EBO
0.3
10
nA
V
EB
=4V
Collector Emitter Cut-Off
Current
I
CES
0.3
10
nA
V
CES
=120V
Collector-Emitter
Saturation Voltage
V
CE(sat)
17
85
140
170
250
25
120
180
250
340
mV
mV
mV
mV
mV
I
C
=0.2A, I
B
=10mA*
I
C
=1A, I
B
=10mA*
I
C
=2A, I
B
=20mA*
I
C
=3A, I
B
=40mA*
I
C
=5A, I
B
=100mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
880
1000
mV
I
C
=3A, I
B
=40mA*
Base-Emitter Turn-On
Voltage
V
BE(on)
840
950
mV
I
C
=3A, V
CE
=2V*
Static Forward Current
Transfer Ratio
h
FE
290
270
270
130
40
440
450
360
220
55
1200
I
C
=10mA, V
CE
=2V*
I
C
=1A, V
CE
=2V*
I
C
=3A, V
CE
=2V*
I
C
=5A, V
CE
=2V*
I
C
=10A, V
CE
=2V*
Transition Frequency
f
T
155
MHz
I
C
=50mA, V
CE
=10V
f=100MHz
Output Capacitance
C
obo
27
40
pF
V
CB
=10V, f=1MHz
Switching Times
t
on
220
ns
I
C
=3A, I
B
=30mA, V
CC
=10V
t
off
540
ns
I
C
=3A, I
B
=30mA
,
V
CC
=10V
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
FCX1051A
1m
1m
1m
1m
1m
I
C
- Collector Current (A)
V
CE(sat)
v I
C
0
IC/IB=50
IC/IB=100
IC/IB=200
+25C
-55C
+100C
0
I
C
- Collector Current (A)
h
FE
v I
C
0
I
C
- Collector Current (A)
V
BE(on)
v I
C
+100C
+150C
+25C
0
I
C
- Collector Current (A)
V
CE(sat)
v I
C
+100C
+150C
+25C
0
I
C
- Collector Current (A)
V
BE(sat)
v I
C
+25C
-55C
IC/IB=100
VCE=2V
-55C
IC/IB=100
+25C
+150C
+100C
-55C
10m
100m
1
10
0.2
0.4
0.5
0.3
0.1
10m
100m
1
10
0.1
0.2
0.3
0.4
0.5
10m
100m
1
10
600
150
300
450
750
10m
100m
1
10
10m
100m
1
10
0.2
0.4
0.6
0.8
1.0
0.4
0.8
1.2
1.6
100m
10
100
1s
100ms
10
1
DC
0.01
V
CE
- Collector Emitter Voltage (V)
Safe Operating Area
10ms
1ms
100us
1
0.1
FCX1051A
TYPICAL CHARACTERISTICS