SOT89 PNP SILICON POWER
(SWITCHING) TRANSISTOR
ISSSUE 1 - DECEMBER 1998
FEATURES
*
2W POWER DISSIPATION
*
20A Peak Pulse Current
*
Excellent H
FE
Characteristics up to 20 Amps
*
Extremely Low Saturation Voltage E.g. 25mv Typ.
*
Extremely Low Equivalent On-resistance;
R
CE(sat)
53m
at 3A
Complimentary Type -
FCX1047A
Partmarking Detail -
147
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
-15
V
Collector-Emitter Voltage
V
CEO
-12
V
Emitter-Base Voltage
V
EBO
-5
V
Peak Pulse Current **
I
CM
-20
A
Continuous Collector Current
I
C
-3
A
Base Current
I
B
-500
mA
Power Dissipation at T
amb
=25C
P
tot
1
2
W
W
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
C
recommended P
tot
calculated using FR4 measuring 15x15x0.6mm
Maximum power dissipation is calculated assuming that the device is mounted on FR4
substrate measuring 40x40x0.6mm and using comparable measurement methods adopted by
other suppliers.
**Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
Spice parameter data is available upon request for these devices.
Refer to the handling instructions for soldering surface mount components.
C
B
C
E
FCX1147A
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
PARAMETER
SYMBOL
VALUE
UNIT
CONDITIONS.
MIN.
TYP.
MAX.
Collector-Base
Breakdown Voltage
V
(BR)CBO
-15
V
I
C
=-100
A
Collector-Emitter
Breakdown Voltage
V
(BR)CES
-12
V
I
C
=-100
A
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
-12
V
I
C
=-10mA
Collector-Emitter
Breakdown Voltage
V
(BR)CEV
-12
V
I
C
=-100
A, V
EB
=+1V
Emitter-Base
Breakdown Voltage
V
(BR)EBO
-5
V
I
E
=-100
A
Collector Cut-Off Current
I
CBO
-0.3
-10
nA
V
CB
=-12V
Emitter Cut-Off Current
I
EBO
-0.3
-10
nA
V
EB
=-4V
Collector Emitter Cut-Off
Current
I
CES
-0.3
-10
nA
V
CES
=-10V
Collector-Emitter
Saturation Voltage
V
CE(sat)
-25
-70
-90
-115
-160
-250
-50
-110
-130
-170
-250
-400
mV
mV
mV
mV
mV
I
C
=-0.1A, I
B
=-1mA*
I
C
=-0.5A, I
B
=-2.5mA*
I
C
=-1A, I
B
=-6mA*
I
C
=-2A, I
B
=-20mA*
I
C
=-3A, I
B
=-30mA*
I
C
=-5A, I
B
=-50mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
-820
-1000
mV
I
C
=-3A, I
B
=-30mA*
Base-Emitter Turn-On
Voltage
V
BE(on)
-770
-950
mV
I
C
=-3A, V
CE
=-2V*
Static Forward Current
Transfer Ratio
h
FE
270
250
200
200
150
90
450
400
340
300
245
145
50
850
I
C
=-10mA, V
CE
=-2V*
I
C
=-0.5A, V
CE
=-2V*
I
C
=-2.0A, V
CE
=-2V*
I
C
=-3.0A, V
CE
=-2V*
I
C
=-5.0A, V
CE
=-2V*
I
C
=-10.0A, V
CE
=-2V*
I
C
=-20.0A, V
CE
=-2V*
Transition Frequency
f
T
115
MHz
I
C
=-50mA, V
CE
=-10V
f=50MHz
Output Capacitance
C
cb
80
pF
V
CB
=-10V, f=1MHz
Switching Times
t
on
150
ns
I
C
=-4A, I
B
=-40mA,
V
CC
=-10V
t
off
220
ns
I
C
=-4A, I
B
=
-
40mA,
V
CC
=-10V
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
FCX1147A
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