SOT89 PNP SILICON POWER
(SWITCHING) TRANSISTOR
ISSSUE 1 - SEPTEMBER 1999
FEATURES
*
2W POWER DISSIPATION
*
20A Peak Pulse Current
*
Excellent H
FE
Characteristics up to 10 Amps
*
Extremely Low Saturation Voltage E.g. 45mv Typ.
*
Extremely Low Equivalent On-resistance;
R
CE(sat)
67m
at 3A
Partmarking Detail -
149
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
-30
V
Collector-Emitter Voltage
V
CEO
-25
V
Emitter-Base Voltage
V
EBO
-5
V
Peak Pulse Current **
I
CM
-10
A
Continuous Collector Current
I
C
-3
A
Base Current
I
B
-500
mA
Power Dissipation at T
amb
=25C
P
tot
1
2
W
W
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
C
recommended P
tot
calculated using FR4 measuring 15x15x0.6mm
Maximum power dissipation is calculated assuming that the device is mounted on FR4
substrate measuring 40x40x0.6mm and using comparable measurement methods adopted by
other suppliers.
**Measured under pulsed conditions. Pulse width=300
s. Duty cycle 2%
Spice parameter data is available upon request for these devices.
Refer to the handling instructions for soldering surface mount components.
C
B
C
E
FCX1149A
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
PARAMETER
SYMBOL
VALUE
UNIT
CONDITIONS.
MIN.
TYP.
MAX.
Collector-Base
Breakdown Voltage
V
(BR)CBO
-30
V
I
C
=-100
A
Collector-Emitter
Breakdown Voltage
V
(BR)CES
-25
V
I
C
=-100
A
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
-25
V
I
C
=-10mA*
Collector-Emitter
Breakdown Voltage
V
(BR)CEV
-25
V
I
C
=-100
A, V
EB
=+1V
Emitter-Base
Breakdown Voltage
V
(BR)EBO
-5
V
I
E
=-100
A
Collector Cut-Off Current
I
CBO
-0.3
-100
nA
V
CB
=-24V
Emitter Cut-Off Current
I
EBO
-0.3
-100
nA
V
EB
=-4V
Collector Emitter Cut-Off
Current
I
CES
-0.3
-100
nA
V
CES
=-20V
Collector-Emitter
Saturation Voltage
V
CE(sat)
-45
-100
-140
-200
-230
-80
-170
-240
-300
-350
mV
mV
mV
mV
mV
I
C
=-0.1A, I
B
=-1mA*
I
C
=-0.5A, I
B
=-3mA*
I
C
=-1A, I
B
=-7mA*
I
C
=-3A, I
B
=-100mA*
I
C
=-4A, I
B
=-140mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
-930
-1050
mV
I
C
=-3A, I
B
=-100mA*
Base-Emitter Turn-On
Voltage
V
BE(on)
-840
-1000
mV
I
C
=-3A, V
CE
=-2V*
Static Forward Current
Transfer Ratio
h
FE
270
250
150
115
450
400
260
190
50
800
I
C
=-10mA, V
CE
=-2V*
I
C
=-0.5A, V
CE
=-2V*
I
C
=-3.0A, V
CE
=-2V*
I
C
=-5.0A, V
CE
=-2V*
I
C
=-10.0A, V
CE
=-2V*
Transition Frequency
f
T
135
MHz
I
C
=-50mA, V
CE
=-10V
f=50MHz
Output Capacitance
C
cb
50
pF
V
CB
=-10V, f=1MHz
Switching Times
t
on
150
ns
I
C
=-4A, I
B
=-40mA,
V
CC
=-10V
t
off
270
ns
I
C
=-4A, I
B
=
40mA,
V
CC
=-10V
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle 2%
FCX1149A
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