SOT89 NPN SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
ISSUE 3 OCTOBER 1995
FEATURES
*
400 Volt V
CEO
*
P
tot
= 1 Watt
COMPLEMENTARY TYPE
FCX558
PARTMARKING DETAIL
N58
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
400
V
Collector-Emitter Voltage
V
CEO
400
V
Emitter-Base Voltage
V
EBO
5
V
Continuous Collector Current
I
C
225
mA
Peak Pulse Current
I
CM
500
mA
Power Dissipation at T
amb
=25C
P
tot
1
W
Operating and Storage Temperature Range
T
j
:T
stg
-65 to +150
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C).
PARAMETER
SYMBOL
MIN.
MAX.
UNIT
CONDITIONS.
Breakdown Voltages
V
(BR)CBO
400
V
I
C
=100
A
V
CEO(sus)
400
V
I
C
=10mA*
V
(BR)EBO
5
V
I
E
=100
A
Collector Cut-Off Currents
I
CBO
100
nA
V
CB
=320V
I
CES
100
nA
V
CE
=320V
Emitter Cut-Off Current
I
EBO
100
nA
V
EB
=4V
Emitter Saturation Voltages
V
CE(sat)
0.2
0.5
V
V
I
C
=20mA, I
B
=2mA*
I
C
=50mA, I
B
=6mA*
V
BE(sat)
0.9
V
I
C
=50mA, I
B
=5mA*
Base-Emitter
Turn On Voltage
V
BE(on)
0.9
V
I
C
=50mA, V
CE
=10V*
Static Forward Current
Transfer Ratio
h
FE
100
100
15
300
I
C
=1mA, V
CE
=10V
I
C
=50mA, V
CE
=10V*
I
C
=100mA, V
CE
=10V**
Transition Frequency
f
T
50
MHz
I
C
=10mA, V
CE
=20V
f=20MHz
Collector-Base
Breakdown Voltage
C
obo
5
pF
V
CB
=20V, f=1MHz
Switching times
t
on
t
off
135 Typical
2260 Typical
ns
ns
I
C
=50mA, V
C
=100V
I
B1
=5mA, I
B2
=-10mA
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
Spice parameter data is available upon request for this device
For typical characteristics graphs see FMMT458 datasheet
FCX458
3 - 85
C
B
C
E
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