SOT89 NPN SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 3 - NOVEMBER 1995
7
COMPLEMENTARY TYPE
FCX593
PARTMARKING DETAIL
N93
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
120
V
Collector-Emitter Voltage
V
CEO
100
V
Emitter-Base Voltage
V
EBO
5
V
Continuous Collector Current
I
C
1
A
Peak Pulse Current
I
CM
2
A
Base Current
I
B
200
mA
Power Dissipation at T
amb
=25C
P
tot
1
W
Operating and Storage Temperature Range
T
j
:T
stg
-65 to +150
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C).
PARAMETER
SYMBOL
MIN.
MAX.
UNIT
CONDITIONS.
Breakdown Voltages
V
(BR)CBO
120
V
I
C
=100
A
V
CEO(sus)
100
V
I
C
=10mA*
V
(BR)EBO
5
V
I
E
=100
A
Collector Cut-Off Currents
I
CBO
100
nA
V
CB
=100V
I
CES
100
nA
V
CES
=100V
Emitter Cut-Off Current
I
EBO
100
nA
V
EB
=4V
Collector-Emitter
Saturation Voltage
V
CE(sat)
0.3
0.6
V
V
I
C
=500mA, I
B
=50mA
I
C
=1A, I
B
=100mA
Base-Emitter
Saturation Voltage
V
BE(sat)
1.15
V
I
C
=1A, I
B
=100mA
Base-Emitter
Turn On Voltage
V
BE(on)
1.0
V
I
C
=1A, V
CE
=10V
Static Forward Current
Transfer Ratio
h
FE
100
100
60
20
300
I
C
=1mA, V
CE
=10V*
I
C
=250mA, V
CE
=10V*
I
C
=500mA, V
CE
=10V*
I
C
=1A, V
CE
=10V*
Transition Frequency
f
T
150
MHz
I
C
=50mA, V
CE
=10V
f=100MHz
Collector-Base
Breakdown Voltage
C
obo
10
pF
V
CB
=10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
For typical Characteristics graphs see FMMT493 datasheet.
FCX493
3 - 88
C
C
B
E
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