SOT89 NPN SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
ISSUE 3 OCTOBER 1995
7
FEATURES
*
150 Volt V
CEO
*
1 Amp continuous current
PARTMARKING DETAIL
N95
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
170
V
Collector-Emitter Voltage
V
CEO
150
V
Emitter-Base Voltage
V
EBO
5
V
Continuous Collector Current
I
C
1
A
Peak Pulse Current
I
CM
2
A
Base Current
I
B
200
mA
Power Dissipation at T
amb
=25C
P
tot
1
W
Operating and Storage Temperature Range
T
j
:T
stg
-65 to +150
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C).
PARAMETER
SYMBOL
MIN.
MAX.
UNIT
CONDITIONS.
Breakdown Voltages
V
(BR)CBO
170
V
I
C
=100
A
V
CEO(sus)
150
V
I
C
=10mA*
V
(BR)EBO
5
V
I
E
=100
A
Collector Cut-Off
Currents
I
CBO
, I
CES
100
nA
V
CB
=150V, V
CE
=150V
Emitter Cut-Off Current
I
EBO
100
nA
V
EB
=4V
Emitter Saturation
Voltages
V
CE(sat)
0.2
0.3
V
V
I
C
=250mA, I
B
=25mA*
I
C
=500mA, I
B
=50mA*
V
BE(sat)
1.0
V
I
C
=500mA, I
B
=50mA*
Base-Emitter
Turn On Voltage
V
BE(on)
1.0
V
I
C
=500mA, V
CE
=10V*
Static Forward Current
Transfer Ratio
h
FE
100
100
50
10
300
I
C
=1mA, V
CE
=10V
I
C
=250mA, V
CE
=10V*
I
C
=500mA, V
CE
=10V*
I
C
=1A, V
CE
=10V*
Transition Frequency
f
T
100
MHz
I
C
=50mA, V
CE
=10V
f=100MHz
Collector-Base
Breakdown Voltage
C
obo
10
pF
V
CB
=10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
For typical characteristics graphs see FMMT495 Datasheet
FCX495
C
C
B
E
3 - 89
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