Issue 1 - November 2005
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Zetex Semiconductors plc 2005
FCX555
180V High voltage PNP switching transistor in SOT89
Summary
BV
CEV
> -180V
Description
Packaged in the SOT89 outline this new high gain medium power
PNP transistor offers 180V forward blocking capability making it
ideal for use in VOIC and various driving and power management
functions.
Features
180 volts forward blocking
Applications
Voice over internet protocol (VOIC)
MOSFET gate drivers
Power switches
Motor control
Ordering information
Device marking
555
Device
Reel size
Tape width
Quantity per reel
FCX555TA
7"
12mm embossed
1,000
Pin out - top view
FCX555
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Zetex Semiconductors plc 2005
Absolute maximum ratings
NOTES:
(a) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in
still air conditions.
(b) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in
still air conditions.
Parameter
Symbol
Limit
Unit
Collector-base voltage
V
CBO
-180
V
Collector-emitter voltage
V
CEV
-180
V
Emitter-base voltage
V
EBO
-7
V
Continuous collector current
(a)
I
C
-0.7
A
Peak pulse current
I
CM
-2
A
Power dissipation at T
A
=25C
(a)
Linear derating factor
P
D
1.5
12
W
mW/C
Power dissipation at T
A
=25C
(b)
Linear derating factor
P
D
2.1
16.8
W
mW/C
Operating and storage temperature range
T
j
:T
stg
-55 to +150
C
Thermal resistance
Parameter
Symbol
Value
Unit
Junction to ambient
(a)
R
JA
83
C/W
FCX555
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Zetex Semiconductors plc 2005
Electrical characteristics
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
Collector-base breakdown
voltage
BV
CBO
-180
V
I
C
= -100A
Collector-emitter
breakdown voltage
BV
CEV
-180
V
I
C
= -1A,
-0.3V < V
BE
< 1V
Collector-emitter
breakdown voltage
BV
CER
-180
V
I
C
= -1
A, RB 1k
Emitter-base breakdown
voltage
BV
EBO
-7
-8.1
V
I
E
= -100A
Collector-emitter
breakdown voltage
BV
CEO
-150
V
I
C
=-10mA
(*)
NOTES:
(*) Measured under pulsed conditions. Pulse width 300
s; duty cycle 2%.
Collector cut-off current
I
CBO
<1
-20
nA
V
CB
= -144V
-10
A
V
CB
= -144V, T
AMB
= 100C
Emitter cut-off current
I
EBO
<1
-20
nA
V
EB
= -6V
Collector emitter saturation
voltage
V
CE(SAT)
-300
mV
I
C
= -0.1A, I
B
= -10mA
(*)
-400
mV
I
C
= -0.25A, I
B
= -25mA
(*)
Base-emitter saturation
voltage
V
BE(SAT)
-1000
mV
I
C
=-250mA, I
B
=-25mA
(*)
Base-emitter turn-on
voltage
V
BE(ON)
-950
mV
I
C
=-250mA, V
CE
=-5V
(*)
Static forward current
transfer ratio
h
FE
100
I
C
= -10mA, V
CE
= -5V
(*)
100
300
I
C
= -100mA, V
CE
= -5V
(*)
Transition frequency
f
T
100
MHz
I
c
= -50mA, V
CE
= -10V,
f = 100MH
Z
Output capacitance
C
OBO
10
pF
V
CB
1= -10V, f = 1MH
Z
(*)
FCX555
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Zetex Semiconductors plc 2005
Typical characteristics
V
)
t
a
s
(
E
C
I
v
C
I
C
-
)
s
p
m
A
(
t
n
e
r
r
u
C
r
o
t
c
e
l
l
o
C
V
C
E
(
s
a
t
)
-
(
V
o
l
t
s
)
I
C
-
)
s
p
m
A
(
t
n
e
r
r
u
C
r
o
t
c
e
l
l
o
C
I
C
-
)
s
p
m
A
(
t
n
e
r
r
u
C
r
o
t
c
e
l
l
o
C
h
E
F
I
v
C
V
)
t
a
s
(
E
B
I
v
C
I
C
-
)
s
p
m
A
(
t
n
e
r
r
u
C
r
o
t
c
e
l
l
o
C
V
)
n
o
(
E
B
I
v
C
h
F
E
-
N
o
r
m
a
l
i
s
e
d
G
a
i
n
(
%
)
V
B
E
(
s
a
t
)
-
(
V
o
l
t
s
)
V
B
E
-
(
V
o
l
t
s
)
0
2
0
4
0
6
0
8
0
0
1
0
1
-
2
.
0
-
4
.
0
-
6
.
0
-
8
.
0
-
s
d
e
e
p
S
g
n
i
h
c
t
i
w
S
I
C
-
)
s
p
m
A
(
t
n
e
r
r
u
C
r
o
t
c
e
l
l
o
C
S
w
i
t
c
h
i
n
g
t
i
m
e
1
0
0
0
.
0
-
1
0
0
.
0
-
1
.
0
-
1
0
.
0
-
I
C
I
/
B
0
1
=
V
E
C
V
0
1
-
=
1
0
0
0
.
0
-
1
0
0
.
0
-
1
1
.
0
-
1
0
.
0
-
3
2
1
4
5
1
.
0
-
1
-
0
I
1
B
I
=
2
B
I
=
C
0
1
/
1
0
.
0
-
2
-
5
5
/
4
5
5
X
T
Z
s
t
f
t
d
t
r
t
s
t
s
r
t
s
n
0
0
3
0
0
2
0
0
1
0
0
4
0
0
5
0
f
t
s
n
0
0
6
0
0
4
0
0
2
0
0
8
0
0
0
1
0
d
t
s
n
0
0
1
0
5
0
6
.
0
-
1
0
0
0
.
0
-
1
0
0
.
0
-
1
-
1
0
.
0
-
1
.
0
-
8
.
0
-
0
.
1
-
2
.
1
-
4
.
1
-
6
.
0
-
1
-
1
0
0
0
.
0
-
1
0
0
.
0
-
1
.
0
-
1
0
.
0
-
I
C
I
/
B
0
1
=
0
.
1
-
2
.
1
-
4
.
1
-
8
.
0
-
0
V
E
C
V
0
1
-
=
FCX555
Issue 1 - November 2005
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Zetex Semiconductors plc 2005
Intentionally left blank
FCX555
Issue 1 - November 2005
6
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Zetex Semiconductors plc 2005
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This publication is issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied
or reproduced for any purpose or form part of any order or contact or be regarded as a representation relating to the products or services
concerned. The company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or
service.
Europe
Zetex GmbH
Streitfeldstrae 19
D-81673 Mnchen
Germany
Telefon: (49) 89 45 49 49 0
Fax: (49) 89 45 49 49 49
europe.sales@zetex.com
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Zetex Inc
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Hauppauge, NY 11788
USA
Telephone: (1) 631 360 2222
Fax: (1) 631 360 8222
usa.sales@zetex.com
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Zetex (Asia Ltd)
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Hing Fong Road, Kwai Fong
Hong Kong
Telephone: (852) 26100 611
Fax: (852) 24250 494
asia.sales@zetex.com
Corporate Headquarters
Zetex Semiconductors plc
Zetex Technology Park, Chadderton
Oldham, OL9 9LL
United Kingdom
Telephone (44) 161 622 4444
Fax: (44) 161 622 4446
hq@zetex.com
SOT89 Packaging details
Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches
DIM
Millimeters
Inches
DIM
Millimeters
Inches
Min
Max
Min
Max
Min
Max
Min
Max
A
1.40
1.60
0.550
0.630
E1
2.13
2.29
0.084
0.090
B
0.44
0.56
0.017
0.022
e
1.50 BSC
0.059 BSC
B1
0.36
0.48
0.014
0.019
e1
3.00 BSC
0.118 BSC
C
0.35
0.44
0.014
0.019
H
3.94
4.25
0.155
0.167
D
4.40
4.60
0.173
0.181
L
0.89
1.20
0.155
0.167
E
2.29
2.60
0.090
0.102
-
-
-
-
D1
D
A
C
B1
L
E
H
E1
B
e
e1
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