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Электронный компонент: FCX558

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SOT89 PNP SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
ISSUE 3 MARCH 1996
FEATURES
*
400 Volt V
CEO
*
P
tot
= 1 Watt
COMPLEMENTARY TYPE
FCX458
PARTMARKING DETAIL
P58
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
-400
V
Collector-Emitter Voltage
V
CEO
-400
V
Emitter-Base Voltage
V
EBO
-5
V
Continuous Collector Current
I
C
-200
mA
Peak Pulse Current
I
CM
-500
mA
Power Dissipation at T
amb
=25C
P
tot
1
W
Operating and Storage Temperature Range
T
j
:T
stg
-65 to +150
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C).
PARAMETER
SYMBOL
MIN.
MAX.
UNIT
CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
-400
V
I
C
=-100
A
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
-400
V
I
C
=-10mA*
Emitter-Base
Breakdown Voltage
V
(BR)EBO
-5
V
I
E
=-100
A
Collector Cut-Off Current
I
CBO
;I
CES
-100
nA
V
CB
=-320V; V
CES
= 320V
Emitter Cut-Off Current
I
EBO
-100
nA
V
EB
=-4V
Collector-Emitter
Saturation Voltage
V
CE(sat)
-0.2
-0.5
V
V
I
C
=-20mA, I
B
=-2mA*
I
C
=-50mA, I
B
=-6mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
-0.9
V
I
C
=-50mA, I
B
=-5mA*
Base-Emitter
Turn On Voltage
V
BE(on)
-0.9
V
I
C
=-50mA, V
CE
=-10V*
Static Forward Current
Transfer Ratio
h
FE
100
100
15
300
I
C
=-1mA, V
CE
=-10V
I
C
=-50mA, V
CE
=-10V*
I
C
=-100mA, V
CE
=-10V*
Transition Frequency
f
T
50
MHz
I
C
=-10mA, V
CE
=-20V
f=20MHz
Collector-Base
Breakdown Voltage
C
obo
5
pF
V
CB
=-20V, f=1MHz
Switching times
t
on
t
off
95 Typical
1600 Typical
ns
ns
I
C
=-50mA, V
C
=-100V
I
B1
=-5mA, I
B2
=-10mA
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
Spice parameter data is available upon request for this device
For typical characteristics graphs see FZT558 datasheet.
3 - 90
FCX558
C
C
B
E