SOT89 PNP SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
ISSUE 3 - NOVEMBER 1995
7
PARTMARKING DETAIL P96
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
-220
V
Collector-Emitter Voltage
V
CEO
-200
V
Emitter-Base Voltage
V
EBO
-5
V
Peak Pulse Current
I
CM
-1
A
Continuous Collector Current
I
C
-0.3
A
Base Current
I
B
-200
mA
Power Dissipation at T
amb
=25C
P
tot
1
W
Operating and Storage Temperature Range
T
j
:T
stg
-65 to +150
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C).
PARAMETER
SYMBOL MIN.
MAX. UNITCONDITIONS.
Collector-Base Breakdown Voltage
V
(BR)CBO
-220
V
I
C
=-100
A
Collector-Emitter Breakdown Voltage
V
(BR)CEO
-200
V
I
C
=-10mA*
Emitter-Base Breakdown Voltage
V
(BR)EBO
-5
V
I
E
=-100
A
Collector Cut-Off Current
I
CBO
-100
nA V
CB
=-200V
Emitter Cut-Off Current
I
EBO
-100
nA V
EB
=-4V
Collector-Emitter Cut-Off Current
I
CES
-100
nA V
CES
=-200V
Saturation
Voltages
V
CE(sat)
-0.2
-0.35
V
V
I
C
=-100mA,I
B
=-10mA
I
C
=-250mA I
B
=-25mA*
V
BE(sat)
-1.0
V
I
C
=-250mA,I
B
=-25mA*
Base-Emitter Turn-on Voltage
V
BE(on)
-0.9
V
I
C
=-250mA,V
CE
=-10V*
Static Forward Current Transfer Ratio h
FE
100
100
85
35
300
I
C
=-1mA, V
CE
=-10V
I
C
=-100mA,V
CE
=-10V*
I
C
=-250mA,V
CE
=-10V*
I
C
=-400mA,V
CE
=-10V,
Transition Frequency
f
T
150
MHz I
C
=-50mA, V
CE
=-10V
f=100MHz
Output Capacitance
C
obo
10
pF
V
CB
=-10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
For typical Characteristics graphs see FMMT596 datasheet.
FCX596
3 - 95
D
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G
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SOT89
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