SOT89 NPN SILICON POWER
(SWITCHING) TRANSISTOR
ISSUE 5 - SEPTEMBER 1999
FEATURES
*
2W POWER DISSIPATION
*
6A PEAK PULSE CURRENT
*
EXCELLENT h
FE
CHARACTERISTICS UP TO 6 Amps
*
EXTREMELY LOW SATURATION VOLTAGE e.g. 13mV typ.
*
EXTREMELY LOW EQUIVALENT ON-RESISTANCE;
*
R
CE(sat)
87m
at 2.75A
COMPLIMENTARY TYPE -
FCX720
PARTMARKING DETAIL -
619
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
50
V
Collector-Emitter Voltage
V
CEO
50
V
Emitter-Base Voltage
V
EBO
5
V
Peak Pulse Current
I
CM
6
A
Continuous Collector Current
I
C
2.75
A
Base Current
I
B
500
mA
Power Dissipation at T
amb
=25C
P
tot
1
2
W
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
C
recommended P
tot
calculated using FR4 measuring 15x15x0.6mm
Maximum power dissipation is calculated assuming that the device is mounted on FR4
substrate measuring 40x40x0.6mm and using comparable measurement methods adopted by
other suppliers.
**Measured under pulsed conditions. Pulse width=300
s. Duty cycle 2%
Spice parameter data is available upon request for these devices
Refer to the handling instructions for soldering surface mount components.
FCX619
C
B
C
E
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
50
190
V
I
C
=100
A
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
50
65
V
I
C
=10mA*
Emitter-Base
Breakdown Voltage
V
(BR)EBO
5
8.3
V
I
E
=100
A
Collector Cut-Off
Current
I
CBO
100
nA
V
CB
=40V
Emitter Cut-Off Current I
EBO
100
nA
V
EB
=4V
Collector Emitter
Cut-Off Current
I
CES
100
nA
V
CES
=40V
Collector-Emitter
Saturation Voltage
V
CE(SAT)
13
150
190
240
25
220
260
320
mV
mV
mV
mV
I
C
=0.1A, I
B
=10mA*
I
C
=1A, I
B
=10mA*
I
C
=2A, I
B
=50mA*
I
C
=2.75A,I
B
=100mA*
Base-Emitter
Saturation Voltage
V
BE(SAT)
0.97
1.1
V
I
C
=2.75A,
I
B
=100mA*
Base-Emitter Turn-On
Voltage
V
BE(ON)
0.89
1.0
V
I
C
=2.75A, V
CE
=2V*
Static Forward Current
Transfer Ratio
h
FE
200
300
200
100
400
450
400
200
30
I
C
=10mA, V
CE
=2V*
I
C
=200mA, V
CE
=2V*
I
C
=1A, V
CE
=2V*
I
C
=2A, V
CE
=2V*
I
C
=6A, V
CE
=2V*
Transition
Frequency
f
T
100
165
MHz
I
C
=50mA, V
CE
=10V
f=100MHz
Output Capacitance
C
OBO
12
20
pF
V
CB
=10V, f=1MHz
Turn-On Time
t
(ON)
170
ns
V
CC
=10V, I
C
=1A
I
B1
=-I
B2
=10mA
Turn-Off Time
t
(OFF)
750
ns
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle 2%
Spice parameter data is available upon request for this device
FCX619
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