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Электронный компонент: FCX690B

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SOT89 NPN SILICON POWER
(SWITCHING) TRANSISTOR
ISSSUE 1 - MARCH 1999
FEATURES
*
2W POWER DISSIPATION
*
6A Peak Pulse Current
*
Gain of 400 @I
C
=1Amp
*
Very Low Saturation Voltage
Complimentary Type -
FCX790A
Partmarking Detail -
690
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
45
V
Collector-Emitter Voltage
V
CEO
45
V
Emitter-Base Voltage
V
EBO
5
V
Peak Pulse Current **
I
CM
6
A
Continuous Collector Current
I
C
2
A
Power Dissipation at T
amb
=25C
P
tot
1
2
W
W
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
C
recommended P
tot
calculated using FR4 measuring 15x15x0.6mm
Maximum power dissipation is calculated assuming that the device is mounted on FR4
substrate measuring 40x40x0.6mm and using comparable measurement methods adopted by
other suppliers.
**Measured under pulsed conditions. Pulse width=300
s. Duty cycle 2%
Spice parameter data is available upon request for these devices
Refer to the handling instructions for soldering surface mount components.
C
B
C
E
FCX690B
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C)
PARAMETER
SYMBOL
Min
Typ
Max
UNIT
CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
45
V
I
C
=100
A
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
45
V
I
C
=10mA*
Emitter-Base
Breakdown Voltage
V
(BR)EBO
5
V
I
E
=100
A
Collector Cut-Off Current
I
CBO
0.1
A
V
CB
=35V
Emitter Cut-Off Current
I
EBO
0.1
A
V
EB
=4V
Collector-Emitter
Saturation Voltage
V
CE(sat)
80
300
mV
mV
I
C
=0.1A, I
B
=0.5mA *
I
C
=1A, I
B
=5mA *
Base-Emitter
Saturation Voltage
V
BE(sat)
0.9
V
I
C
=1A, I
B
=10mA *
Base-Emitter
Turn-On Voltage
V
BE(on)
0.85
V
I
C
=1A, V
CE
=2V *
Static Forward Current
Transfer
Ratio
h
FE
500
400
150
I
C
=100mA, V
CE
=2V*
I
C
=1A, V
CE
=2V*
I
C
=2A, V
CE
=2V*
Transition Frequency
f
T
150
MHz
I
C
=50mA, V
CE
=5V
f=50MHz
Input Capacitance
C
ibo
200
pF
V
EB
=0.5V, f=1MHz
Output Capacitance
C
obo
16
pF
V
CB
=10V, f=1MHz
Switching Times
t
on
t
off
33
1300
ns
ns
I
C
=500mA, I
B1
=I
B2
=50mA
V
CC
=10V
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle 2%
FCX690B
FCX690B
-55C
+25C
+100C
+175C
+100C
+25C
-55C
0.01
0.1
1
10
0.4
0.2
0
0.8
0.6
0.01
0.1
1
10
0.4
0.2
0
0.8
0.6
0.01
0.1
1
10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
0.01
0.1
1
10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
0.01
0.1
1
10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
TYPICAL CHARACTERISTICS
V
CE(sat)
v I
C
I
C
-
Collector Current (Amps)
V
C
E
(s
at
)
- (V
olts)
V
CE(sat)
v I
C
I
C
-
Collector Current (Amps)
V
C
E
(s
at
)
- (V
olts)
I
C
-
Collector Current (Amps)
I
C
-
Collector Current (Amps)
h
FE
v I
C
V
BE(sat)
v I
C
I
C
-
Collector Current (Amps)
V
BE(on)
v I
C
h
F
E
- Normalised Gain
V
B
E
(s
at
)
-
(
V
o
lts
)
V
B
E
- (V
olts)
I
C
-

Co
l
le
c
to
r
Cur
r
e
nt
(
Am
ps)
V
CE
=2V
V
CE
=2V
1.5K
1K
500
h
F
E
- T
ypical Gain
V
CE
-
Collector Voltage (Volts)
Safe Operating Area
0.1
100
1
10
0.01
0.1
1
10
Single Pulse Test at T
amb
=25C
T
amb
=25C
I
C
/I
B
=100
-55C
+25C
+100C
+175C
0
0
-55C
+25C
+100C
+175C
I
C
/I
B
=100
I
C
/I
B
=10
I
C
/I
B
=200
I
C
/I
B
=100
D.C.
1s
100ms
10ms
1.0ms
0.1ms