SOT89 PNP SILICON POWER
(SWITCHING) TRANSISTOR
ISSSUE 1 -NOVEMBER 1998
FEATURES
*
2W POWER DISSIPATION
*
8A Peak Pulse Current
*
Excellent H
FE
Characteristics up to 10 Amps
*
Low Saturation Voltage E.g. 10mv Typ.
Complimentary Type -
FCX688B
Partmarking Detail -
789
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
-25
V
Collector-Emitter Voltage
V
CEO
-25
V
Emitter-Base Voltage
V
EBO
-5
V
Peak Pulse Current **
I
CM
-8
A
Continuous Collector Current
I
C
-3
A
Power Dissipation at T
amb
=25C
P
tot
1
2
W
W
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
C
recommended P
tot
calculated using FR4 measuring 15x15x0.6mm
Maximum power dissipation is calculated assuming that the device is mounted on FR4
substrate measuring 40x40x0.6mm and using comparable measurement methods adopted by
other suppliers.
**Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
Spice parameter data is available upon request for these devices
Refer to the handling instructions when soldering surface mount components.
C
B
C
E
FCX789A
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C)
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS.
Collector-Base Breakdown
Voltage
V
(BR)CBO
-25
V
I
C
=-100
A
Collector-Emitter Breakdown
Voltage
V
(BR)CEO
-25
V
I
C
=-10mA*
Emitter-Base Breakdown
Voltage
V
(BR)EBO
-5
V
I
E
=-100
A
Collector Cut-Off Current
I
CBO
-0.1
A
V
CB
=-15V
Emitter Cut-Off Current
I
EBO
-0.1
A
V
EB
=-4V
Collector-Emitter Saturation
Voltage
V
CE(sat)
-190
-400
-320
mV
mV
mV
I
C
=-1A, I
B
=-10mA*
I
C
=-2A, I
B
=-20mA*
I
C
=-3A, I
B
=-100mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
-0.9
V
I
C
=-1A, I
B
=-10mA*
Base-Emitter
Turn-On Voltage
V
BE(on)
-0.8
V
IC=-1A, V
CE
=-2V*
Static Forward Current
Transfer Ratio
h
FE
300
230
180
75
800
I
C
=-10mA, V
CE
=-2V
I
C
=-1A, V
CE
=-2V*
I
C
=-2A, V
CE
=-2V*
I
C
=-6A, V
CE
=-2V*
Transition Frequency
f
T
100
MHz
I
C
=-50mA, V
CE
=-5V
f=50MHz
Input Capacitance
C
ibo
225
pF
V
EB
=-0.5V, f=1MHz
Output Capacitance
C
obo
25
pF
V
CB
=-10V, f=1MHz
Switching Times
t
on
t
off
35
400
ns
ns
I
C
=-500mA, I
B1
=-50mA
I
B2
=-50mA, V
CC
=-10V
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
FCX789A
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