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Электронный компонент: FCX790A

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SOT89 PNP SILICON POWER
(SWITCHING) TRANSISTOR
ISSUE 1 -JULY 2000
FEATURES
*
2W POWER DISSIPATION
*
6A Peak Pulse Current
*
Excellent H
FE
Characteristics
*
Low Saturation Voltages
Partmarking Detail -
790A
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
-50
V
Collector-Emitter Voltage
V
CEO
-40
V
Emitter-Base Voltage
V
EBO
-5
V
Peak Pulse Current **
I
CM
-6
A
Continuous Collector Current
I
C
-2
A
Power Dissipation at T
amb
=25C
P
tot
1
2
W
W
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
C
recommended P
tot
calculated using FR4 measuring 15x15x0.6mm
Maximum power dissipation is calculated assuming that the device is mounted on FR4
substrate measuring 40x40x0.6mm and using comparable measurement methods adopted by
other suppliers.
**Measured under pulsed conditions. Pulse width=300
s. Duty cycle 2%
Spice parameter data is available upon request for these devices
Refer to the handling instructions when soldering surface mount components.
C
B
C
E
FCX790A
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C)
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS.
Collector-Base Breakdown
Voltage
V
(BR)CBO
-50
V
I
C
=-100
A
Collector-Emitter Breakdown
Voltage
V
(BR)CEO
-40
V
I
C
=-10mA*
Emitter-Base Breakdown
Voltage
V
(BR)EBO
-5
V
I
E
=-100
A
Collector Cut-Off Current
I
CBO
-0.1
A
V
CB
=-30V
Emitter Cut-Off Current
I
EBO
-0.1
A
V
EB
=-4V
Collector-Emitter Saturation
Voltage
V
CE(sat)
-250
-350
-450
mV
mV
mV
I
C
=-0.5A, I
B
=-5mA*
I
C
=-1A, I
B
=-10mA*
I
C
=-2A, I
B
=-50mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
-0.9
V
I
C
=-1A, I
B
=-10mA*
Base-Emitter
Turn-On Voltage
V
BE(on)
-0.8
V
I
C
=-1A, V
CE
=-2V*
Static Forward Current
Transfer Ratio
h
FE
300
250
200
150
800
I
C
=-10mA, V
CE
=-2V
I
C
=-500mA, V
CE
=-2V*
I
C
=-1A, V
CE
=-2V*
I
C
=-2A, V
CE
=-2V*
Transition Frequency
f
T
100
MHz
I
C
=-50mA, V
CE
=-5V
f=50MHz
Input Capacitance
C
ibo
225
pF
V
EB
=-0.5V, f=1MHz
Output Capacitance
C
obo
24
pF
V
CB
=-10V, f=1MHz
Switching Times
t
on
t
off
35
600
ns
ns
I
C
=-500mA, I
B1
=-50mA
I
B2
=-50mA, V
CC
=-10V
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle 2%
FCX790A
FCX790A
D.C.
1s
100ms
10ms
1.0ms
0.1ms
0.01
0.1
1
10
0.8
0.6
0
1.6
0.01
0.1
1
10
0.01
0.1
1
10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
0.01
0.1
1
10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
TYPICAL CHARACTERISTICS
V
CE(sat)
v I
C
I
C
-
Collector Current (Amps)
V
C
E
(s
at
)
- (V
olts)
V
CE(sat)
v I
C
I
C
-
Collector Current (Amps)
V
CE
(
sa
t
)
- (V
olts)
I
C
-
Collector Current (Amps)
I
C
-
Collector Current (Amps)
h
FE
v I
C
V
BE(sat)
v I
C
I
C
-
Collector Current (Amps)
V
BE(on)
v I
C
h
F
E
- Normalised Gain
V
B
E
- (V
olts)
I
C
- Collector Current (Amps)
750
500
250
h
F
E
- T
yp
i
cal Gain
V
CE
-
Collector Voltage (Volts)
Safe Operating Area
0.1
100
1
10
0.01
0.1
1
10
Single Pulse Test at T
amb
=25C
T
amb
=25C
-55C
+25C
+100C
+175C
0
0.01
0.1
1
10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
V
BE
(s
a
t
)
-

(V
olts)
-55C
+25C
+100C
+175C
1.8
1.4
1.2
1.0
0.4
0.2
0.8
0.6
0
1.6
1.8
1.4
1.2
1.0
0.4
0.2
I
C
/I
B
=10
I
C
/I
B
=100
I
C
/I
B
=40
I
C
/I
B
=100
V
CE
=2V
I
C
/I
B
=100
V
CE
=2V
-55C
+25C
+100C
+100C
+25C
-55C