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Электронный компонент: FMMD914

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SOT23 SILICON PLANAR HIGH SPEED
SWITCHING DIODE
ISSUE 2 - OCTOBER 1995
PARTMARKING DETAIL 5D
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Working Peak Reverse Voltage
V
RWM
75
V
Average Rectified Forward Current at
T
amb
=25C
I
F(AV)
75
mA
Repetitive Peak Forward Current
I
FRM
225
mA
Power Dissipation at T
amb
= 25C
P
tot
330
mW
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
PARAMETER
SYMBOL MIN.
MAX.
UNIT CONDITIONS.
Reverse Breakdown Voltage V
BR
75
V
I
R
=100
A
Forward
Voltage V
F
1
V
I
F
=10mA
Static Reverse Current
I
R
25
50
nA
A
V
R
=20V
V
R
=20V, T
amb
=150 C
Reverse Recovery Time
t
rr
8
ns
I
F
= I
RM
=10mA,I
RR
=1mA
R
L
=100
4
ns
I
F
=10mA,I
RR
=1mA, V
R
=6V
R
L
=100
Total Capacitance
C
T
4
pF
V
R
=0, f=1MHz
Forward Recovery Voltage
V
FM(REC)
2.5
V
I
F
=50mA, R
L
=50
Rectification Efficiency
r
45
%
V
R
=2V,R
L
=5k
, C
L
=20pF
Z
source
=50
, f=100MHz
Spice parameter data is available upon request for this device
SOT23
FMMD914
DIODE PIN CONNECTION
!
1
3
2
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