SOT23 NPN SILICON PLANAR MEDIUM
POWER DARLINGTON TRANSISTORS
ISSUE 3 AUGUST 1996
FEATURES
*
60 Volt V
CEO
*
Gain of 10K at I
C
=0.5 Amp
PARTMARKING DETAILS
FMMT38A 4J
FMMT38B 5J
FMMT38C 7J
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
80
V
Collector-Emitter Voltage
V
CEO
60
V
Emitter-Base Voltage
V
EBO
10
V
Peak Pulse Current
I
CM
800
mA
Continuous Collector Current
I
C
300
mA
Power Dissipation at T
amb
=25C
P
tot
330
mW
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C).
PARAMETER
SYMBOL
MIN.
MAX.
UNIT
CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
80
V
I
C
=10
A, I
E
=0
Collector-Emitter
Sustaining Voltage
V
CEO(sus)
60
V
I
C
=10mA, I
B
=0
Emitter-Base
Breakdown Voltage
V
(BR)EBO
10
V
I
E
=10
A, I
C
=0
Collector Cut-Off
Current
I
CBO
100
nA
V
CB
=60V, I
E
=0
Emitter Cut-Off Current
I
EBO
100
nA
V
EB
=8V, I
C
=0
Collector-Emitter
Saturation Voltage
V
CE(sat)
1.25
V
I
C
=800mA, I
B
=8mA*
Base-Emitter
Turn-on Voltage
V
BE(on)
1.8
V
I
C
=800mA, V
CE
=5V*
Static
Forward
Current
Transfer
Ratio
FMMT38A h
FE
500
1000
I
C
=100mA, V
CE
=5V*
I
C
=500mA, V
CE
=5V*
FMMT38B
2000
4000
I
C
=100mA, V
CE
=5V*
I
C
=500mA, V
CE
=5V*
FMMT38C
5000
10000
I
C
=100mA, V
CE
=5V*
I
C
=500mA, V
CE
=5V*
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle 2%
Spice parameter data is available upon request for this device
FMMT38A
FMMT38B
FMMT38C
C
B
E
0.0001
50
150
100
Pulse Width (seconds)
10
100
1
0.1
0.01
0.001
0
D=1 (D.C.)
D=0.5
D=0.2
D=0.1
Single Pulse
D=0.05
0.001
0.01
0.1
1
0.8
0.2
1.0
TYPICAL CHARACTERISTICS
V
CE(sat)
v I
C
I
C
- Collector Current (Amps)
V
C
E
(
s
a
t
)
-
(
V
o
l
t
s
)
I
C
- Collector Current (Amps)
V
BE(sat)
v I
C
I
C
- Collector Current (Amps)
V
BE(on)
v I
C
V
B
E
-
(
V
o
l
t
s
)
V
B
E
(
s
a
t
)
-
(
V
o
l
t
s
)
0.4
0.001
0.01
0.1
1
0
1.0
0.8
0.6
0.4
0.2
1.6
1.4
1.2
I
C
- Collector Current (Amps)
h
FE
v I
C
h
F
E
-
N
o
r
m
a
l
i
s
e
d
G
a
i
n
10
1.0
0.5
2.0
1.5
V
CE
=5V
I
C
/I
B
=100
10
0.6
0.001
0.01
0.1
1
10
I
C
/I
B
=100
1.0
0.5
2.0
1.5
0.001
0.01
0.1
1
10
V
CE
=5V
-55C
+25C
+100C
+175C
-55C
+25C
+100C
+175C
-55C
+25C
+100C
-55C
+25C
+100C
+175C
Maximum transient thermal impedance
T
h
e
r
m
a
l
Re
si
s
t
anc
e
(
C
/
W
)
100m
1s
100ms
IC
-
C
o
lle
c
t
o
r
C
u
r
r
e
n
t (A
)
DC
1m
V
CE
- Collector Emitter Voltage (V)
Safe Operating Area
10ms
1ms
100us
1
10
100
10m
100m
1
FMMT38A
FMMT38B
FMMT38C
3 - 101
3 - 100
SOT23 NPN SILICON PLANAR MEDIUM
POWER DARLINGTON TRANSISTORS
ISSUE 3 AUGUST 1996
FEATURES
*
60 Volt V
CEO
*
Gain of 10K at I
C
=0.5 Amp
PARTMARKING DETAILS
FMMT38A 4J
FMMT38B 5J
FMMT38C 7J
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
80
V
Collector-Emitter Voltage
V
CEO
60
V
Emitter-Base Voltage
V
EBO
10
V
Peak Pulse Current
I
CM
800
mA
Continuous Collector Current
I
C
300
mA
Power Dissipation at T
amb
=25C
P
tot
330
mW
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C).
PARAMETER
SYMBOL
MIN.
MAX.
UNIT
CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
80
V
I
C
=10
A, I
E
=0
Collector-Emitter
Sustaining Voltage
V
CEO(sus)
60
V
I
C
=10mA, I
B
=0
Emitter-Base
Breakdown Voltage
V
(BR)EBO
10
V
I
E
=10
A, I
C
=0
Collector Cut-Off
Current
I
CBO
100
nA
V
CB
=60V, I
E
=0
Emitter Cut-Off Current
I
EBO
100
nA
V
EB
=8V, I
C
=0
Collector-Emitter
Saturation Voltage
V
CE(sat)
1.25
V
I
C
=800mA, I
B
=8mA*
Base-Emitter
Turn-on Voltage
V
BE(on)
1.8
V
I
C
=800mA, V
CE
=5V*
Static
Forward
Current
Transfer
Ratio
FMMT38A h
FE
500
1000
I
C
=100mA, V
CE
=5V*
I
C
=500mA, V
CE
=5V*
FMMT38B
2000
4000
I
C
=100mA, V
CE
=5V*
I
C
=500mA, V
CE
=5V*
FMMT38C
5000
10000
I
C
=100mA, V
CE
=5V*
I
C
=500mA, V
CE
=5V*
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle 2%
Spice parameter data is available upon request for this device
FMMT38A
FMMT38B
FMMT38C
C
B
E
0.0001
50
150
100
Pulse Width (seconds)
10
100
1
0.1
0.01
0.001
0
D=1 (D.C.)
D=0.5
D=0.2
D=0.1
Single Pulse
D=0.05
0.001
0.01
0.1
1
0.8
0.2
1.0
TYPICAL CHARACTERISTICS
V
CE(sat)
v I
C
I
C
- Collector Current (Amps)
V
C
E
(
s
a
t
)
-
(
V
o
l
t
s
)
I
C
- Collector Current (Amps)
V
BE(sat)
v I
C
I
C
- Collector Current (Amps)
V
BE(on)
v I
C
V
B
E
-
(
V
o
l
t
s
)
V
B
E
(
s
a
t
)
-
(
V
o
l
t
s
)
0.4
0.001
0.01
0.1
1
0
1.0
0.8
0.6
0.4
0.2
1.6
1.4
1.2
I
C
- Collector Current (Amps)
h
FE
v I
C
h
F
E
-
N
o
r
m
a
l
i
s
e
d
G
a
i
n
10
1.0
0.5
2.0
1.5
V
CE
=5V
I
C
/I
B
=100
10
0.6
0.001
0.01
0.1
1
10
I
C
/I
B
=100
1.0
0.5
2.0
1.5
0.001
0.01
0.1
1
10
V
CE
=5V
-55C
+25C
+100C
+175C
-55C
+25C
+100C
+175C
-55C
+25C
+100C
-55C
+25C
+100C
+175C
Maximum transient thermal impedance
T
h
e
r
m
a
l
Re
si
s
t
anc
e
(
C
/
W
)
100m
1s
100ms
IC
-
C
o
lle
c
t
o
r
C
u
r
r
e
n
t (A
)
DC
1m
V
CE
- Collector Emitter Voltage (V)
Safe Operating Area
10ms
1ms
100us
1
10
100
10m
100m
1
FMMT38A
FMMT38B
FMMT38C
3 - 101
3 - 100
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