SOT23 NPN SILICON PLANAR
AVALANCHE TRANSISTOR
PROVISIONAL DATASHEET ISSUE 2 MARCH 1996
FEATURES
* Avalanche mode operation
* 50A Peak avalanche current
* Low inductance packaging
APPLICATIONS
* Laser LED drivers
* Fast edge generation
* High speed pulse generators
PARTMARKING DETAIL - 413
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
150
V
Collector-Emitter Voltage
V
CEO
50
V
Emitter-Base Voltage
V
EBO
6
V
Continuous Collector Current
I
C
100
mA
Peak Collector Current (25ns Pulse Width)
I
CM
50
A
Power Dissipation
P
tot
330
mW
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS.
Collector-Emitter
Breakdown Voltage
V
(BR)CES
150
V
I
C
=100
A
Collector-Emitter
Breakdown Voltage
V
CEO(sus)
50
V
I
C
=10mA
Emitter-Base
Breakdown Voltage
V
(BR)EBO
6
V
I
E
=100
A
Collector Cut-Off Current I
CBO
0.1
A
V
CB
=120V
Emitter Cut-Off Current
I
EBO
0.1
A
V
EB
=4V
Collector-Emitter
Saturation Voltage
V
CE(sat)
0.15
V
I
C
=10mA, I
B
=1mA
Base-Emitter
Saturation Voltage
V
BE(sat)
0.8
V
I
C
=10mA, I
B
=1mA
Current in Second
Breakdown (Pulsed)
I
USB
22
31
A
A
V
C
=110V, C
CE
=4.7nF*
V
C
=130V, C
CE
=4.7nF*
Static Forward Current
Transfer Ratio
h
FE
50
I
C
=10mA, V
CE
=10V
*Measured within a circuit possessing an approximate loop inductance of 12nH. The I
(USB)
monitor
circuitry reflects 0.15 Ohm into the Collector-Emitter Discharge Loop
The FMMT413 device is a development product. Samples availability and release to production
scheduled for June 1996
FMMT413
FMMT413
ELECTRICAL CHARACTERISTICS
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS.
Emitter Inductance
L
e
2.5
nH
Standard SOT23 leads
Transition Frequency
f
T
150
MHz
I
C
=10mA, V
CE
=5V
f=20MHz
Collector-Base
Capacitance
C
cb
2
pF
V
CB
=10V, I
E
=0
f=1MHz
.
20
10
0
40
50
30
V
5
-
Supply Voltage (V)
I(
-
A
val
a
nche C
urr
e
nt (A
)
C
CE
=2x4.7nF
0
50
100
150
200
250
C
CE
=4.7nF
C
CE
=2.2nF
C
CE
=1.0nF
T
amb
=25C
I
B
=5mA/ns
p.r.f.=10KHz
TYPICAL CHARACTERISTICS
C
B
E
SOT23
3 - 102
3 - 103
SOT23 NPN SILICON PLANAR
AVALANCHE TRANSISTOR
PROVISIONAL DATASHEET ISSUE 2 MARCH 1996
FEATURES
* Avalanche mode operation
* 50A Peak avalanche current
* Low inductance packaging
APPLICATIONS
* Laser LED drivers
* Fast edge generation
* High speed pulse generators
PARTMARKING DETAIL - 413
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
150
V
Collector-Emitter Voltage
V
CEO
50
V
Emitter-Base Voltage
V
EBO
6
V
Continuous Collector Current
I
C
100
mA
Peak Collector Current (25ns Pulse Width)
I
CM
50
A
Power Dissipation
P
tot
330
mW
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS.
Collector-Emitter
Breakdown Voltage
V
(BR)CES
150
V
I
C
=100
A
Collector-Emitter
Breakdown Voltage
V
CEO(sus)
50
V
I
C
=10mA
Emitter-Base
Breakdown Voltage
V
(BR)EBO
6
V
I
E
=100
A
Collector Cut-Off Current I
CBO
0.1
A
V
CB
=120V
Emitter Cut-Off Current
I
EBO
0.1
A
V
EB
=4V
Collector-Emitter
Saturation Voltage
V
CE(sat)
0.15
V
I
C
=10mA, I
B
=1mA
Base-Emitter
Saturation Voltage
V
BE(sat)
0.8
V
I
C
=10mA, I
B
=1mA
Current in Second
Breakdown (Pulsed)
I
USB
22
31
A
A
V
C
=110V, C
CE
=4.7nF*
V
C
=130V, C
CE
=4.7nF*
Static Forward Current
Transfer Ratio
h
FE
50
I
C
=10mA, V
CE
=10V
*Measured within a circuit possessing an approximate loop inductance of 12nH. The I
(USB)
monitor
circuitry reflects 0.15 Ohm into the Collector-Emitter Discharge Loop
The FMMT413 device is a development product. Samples availability and release to production
scheduled for June 1996
FMMT413
FMMT413
ELECTRICAL CHARACTERISTICS
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS.
Emitter Inductance
L
e
2.5
nH
Standard SOT23 leads
Transition Frequency
f
T
150
MHz
I
C
=10mA, V
CE
=5V
f=20MHz
Collector-Base
Capacitance
C
cb
2
pF
V
CB
=10V, I
E
=0
f=1MHz
.
20
10
0
40
50
30
V
5
-
Supply Voltage (V)
I(
-
A
val
a
nche C
urr
e
nt (A
)
C
CE
=2x4.7nF
0
50
100
150
200
250
C
CE
=4.7nF
C
CE
=2.2nF
C
CE
=1.0nF
T
amb
=25C
I
B
=5mA/ns
p.r.f.=10KHz
TYPICAL CHARACTERISTICS
C
B
E
SOT23
3 - 102
3 - 103
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