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Электронный компонент: FMMT415

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SOT23 NPN SILICON PLANAR
AVALANCHE TRANSISTOR
ISSUE 4 - OCTOBER 1995
7
FEATURES
* Specifically designed for Avalanche mode operation
* 60A Peak Avalanche Current (Pulse width=20ns)
APPLICATIONS
* Laser LED drivers
* Fast edge generation
* High speed pulse generators
PARTMARKING DETAIL
FMMT415 415
FMMT417 417
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
FMMT415 FMMT417
UNIT
Collector-Base Voltage
V
CBO
260
320
V
Collector-Emitter Voltage
V
CEO
100
100
V
Emitter-Base Voltage
V
EBO
6
V
Continuous Collector Current
I
C
500
mA
Peak Collector Current (Pulse Width=20ns)
I
CM
60
A
Power Dissipation
P
tot
330
mW
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
PARAMETER
SYMBOL
MIN. TYP.
MAX. UNIT CONDITIONS.
Collector-Base
Breakdown
Voltage
FMMT415 V
(BR)CES
260
V
I
C
=1mA
T
amb
= -55 to +150C
FMMT417
320
V
I
C
=1mA
Collector-Emitter Breakdown
Voltage
V
CEO(sus)
100
V
I
C
=100
A
Emitter-Base Breakdown Voltage V
(BR)EBO
6
V
I
E
=10
A
Collector Cut-Off Current
I
CBO
0.1
10
A
A
V
CB
=180V
V
CB
=180V,
T
amb
=100C
Emitter Cut-Off Current
I
EBO
0.1
A
V
EB
=4V
Collector-Emitter Saturation
Voltage
V
CE(sat)
0.5
V
I
C
=10mA, I
B
=1mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
0.9
V
I
C
=10mA, I
B
=1mA*
Current in Second Breakdown
(Pulsed)
I
SB
15
25
A
A
V
C
=200V, C
CE
=620pF
V
C
=250V, C
CE
=620pF
Static Forward Current Transfer
Ratio
h
FE
25
I
C
=10mA, V
CE
=10V*
Transition Frequency
f
T
40
MHz
I
C
=10mA, V
CE
=20V
f=20MHz
Collector-Base Capacitance
C
cb
8
pF
V
CB
=20V, I
E
=0
f=100MHz
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
FMMT415
FMMT417
FMMT415
FMMT417
Drive Current = 5mA/ns
TYPICAL CHARACTERISTICS
Maximum Avalanche Current
v Pulse Width
I
-
(
A
)
h
FE
v I
C
Minimum starting voltage
as a function of capacitance

V
-
(
V
)
h
I
USB
v Temperature
for the specified conditions
Minimum starting voltage
as a function of drive current
0
40
20
80 100 120 140 160 180
60
0
20
40
60
80
100
120
140
160
180
1.
2.
3.
Pulse Width (ns)
1. >4x10 Operations Without Failure
2. 10 Operations To Failure
3. 10 Operations To Failure
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
0
10
20
30
40
Temperature (C)
V
+
= 250V
I
-
(
A
)
V
+
= 200V
100
A
1mA
10mA
100mA
1A
0
20
40
60
80
100
Collector Current
175C
25C
-55C
100p
1n
10n
100n
100
120
140
160
180
200
220
Risetime of Base
Collector-Emitter Capacitance (F)
I
*
=50mA
I
*
=100mA
I
*
=200mA
1
10
145
150
155
160
165
170
175
180
Risetime of Base Drive (mA/ns)

V
-
(V
)
I
*
=60mA
I
*
=100mA
I
*
=200mA
C=620pF
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
Temperature (C)
100
120
140
150
160
C = 620pF
Minimum starting voltage
as a function of temperature

V
-
(V
)
V
+-
=10V
%
!
C
B
E
SOT23
3 - 104
3 - 105
SOT23 NPN SILICON PLANAR
AVALANCHE TRANSISTOR
ISSUE 4 - OCTOBER 1995
7
FEATURES
* Specifically designed for Avalanche mode operation
* 60A Peak Avalanche Current (Pulse width=20ns)
APPLICATIONS
* Laser LED drivers
* Fast edge generation
* High speed pulse generators
PARTMARKING DETAIL
FMMT415 415
FMMT417 417
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
FMMT415 FMMT417
UNIT
Collector-Base Voltage
V
CBO
260
320
V
Collector-Emitter Voltage
V
CEO
100
100
V
Emitter-Base Voltage
V
EBO
6
V
Continuous Collector Current
I
C
500
mA
Peak Collector Current (Pulse Width=20ns)
I
CM
60
A
Power Dissipation
P
tot
330
mW
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
PARAMETER
SYMBOL
MIN. TYP.
MAX. UNIT CONDITIONS.
Collector-Base
Breakdown
Voltage
FMMT415 V
(BR)CES
260
V
I
C
=1mA
T
amb
= -55 to +150C
FMMT417
320
V
I
C
=1mA
Collector-Emitter Breakdown
Voltage
V
CEO(sus)
100
V
I
C
=100
A
Emitter-Base Breakdown Voltage V
(BR)EBO
6
V
I
E
=10
A
Collector Cut-Off Current
I
CBO
0.1
10
A
A
V
CB
=180V
V
CB
=180V,
T
amb
=100C
Emitter Cut-Off Current
I
EBO
0.1
A
V
EB
=4V
Collector-Emitter Saturation
Voltage
V
CE(sat)
0.5
V
I
C
=10mA, I
B
=1mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
0.9
V
I
C
=10mA, I
B
=1mA*
Current in Second Breakdown
(Pulsed)
I
SB
15
25
A
A
V
C
=200V, C
CE
=620pF
V
C
=250V, C
CE
=620pF
Static Forward Current Transfer
Ratio
h
FE
25
I
C
=10mA, V
CE
=10V*
Transition Frequency
f
T
40
MHz
I
C
=10mA, V
CE
=20V
f=20MHz
Collector-Base Capacitance
C
cb
8
pF
V
CB
=20V, I
E
=0
f=100MHz
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
FMMT415
FMMT417
FMMT415
FMMT417
Drive Current = 5mA/ns
TYPICAL CHARACTERISTICS
Maximum Avalanche Current
v Pulse Width
I
-
(
A
)
h
FE
v I
C
Minimum starting voltage
as a function of capacitance

V
-
(
V
)
h
I
USB
v Temperature
for the specified conditions
Minimum starting voltage
as a function of drive current
0
40
20
80 100 120 140 160 180
60
0
20
40
60
80
100
120
140
160
180
1.
2.
3.
Pulse Width (ns)
1. >4x10 Operations Without Failure
2. 10 Operations To Failure
3. 10 Operations To Failure
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
0
10
20
30
40
Temperature (C)
V
+
= 250V
I
-
(
A
)
V
+
= 200V
100
A
1mA
10mA
100mA
1A
0
20
40
60
80
100
Collector Current
175C
25C
-55C
100p
1n
10n
100n
100
120
140
160
180
200
220
Risetime of Base
Collector-Emitter Capacitance (F)
I
*
=50mA
I
*
=100mA
I
*
=200mA
1
10
145
150
155
160
165
170
175
180
Risetime of Base Drive (mA/ns)

V
-
(V
)
I
*
=60mA
I
*
=100mA
I
*
=200mA
C=620pF
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
Temperature (C)
100
120
140
150
160
C = 620pF
Minimum starting voltage
as a function of temperature

V
-
(V
)
V
+-
=10V
%
!
C
B
E
SOT23
3 - 104
3 - 105