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Электронный компонент: FMMT4400-1KZ

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SWITCHING CHARACTERISTICS (at T
amb
= 25C )
PARAMETER
SYMBOL
MIN.
MAX.
UNIT
CONDITIONS
Turn-On Time
t
on
35
ns
V
CC
=30V, V
BE(off )
=2V
I
C
=150mA, I
B1
=15mA
(See Fig.1)
Turn-Off Time
t
off
255
ns
V
CC
=30V, I
C
=150mA
I
B1
=I
B2
=15mA
(See Fig. 2)
SOT23 NPN SILICON PLANAR
GENERAL PURPOSE TRANSISTORS
ISSUE 4 FEBRUARY 1997
7
PARTMARKING DETAILS:
FMMT4400 - 1KZ
FMMT4401 - 1L
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
60
V
Collector-Emitter Voltage
V
CEO
40
V
Emitter-Base Voltage
V
EBO
6
V
Continuous Collector Current
I
C
600
mA
Power Dissipation at T
amb
=25C
P
tot
330
mW
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated)
PARAMETER
SYMBOL
FMMT4400
FMMT4401
UNIT CONDITIONS
MIN.
MAX.
MIN.
MAX.
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
40
40
V I
C
=1mA, I
B
=0
Collector-Base
Breakdown Voltage
V
(BR)CBO
60
60
V I
C
=0.1mA, I
E
=0
Emitter-Base
Breakdown Current
V
(BR)EBO
6
6
V I
E
=0.1mA, I
C
=0
Collector-Emitter
Cut-Off Current
I
CEX
0.1
0.1
A V
CE
=35V
V
EB(off)
=0.4V
Base Cut-Off
Current
I
BEX
0.1
0.1
A V
CE
=35V
V
EB(off)
=3V
Static Forward
Current
TransferRatio
h
FE
20
40
50
20
150
20
40
80
100
40
300
I
C
=0.1mA, V
CE
=1V
I
C
=1mA, V
CE
=1V
I
C
=10mA, V
CE
=1V
I
C
=150mA, V
CE
=1V*
I
C
=500mA, V
CE
=2V*
Collector-Emitter
Saturation Voltage
V
CE(sat)
0.4
0.75
0.4
0.75
V
V
I
C
=150mA,I
B
=15mA*
I
C
=500mA,I
B
=50mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
0.75
0.95
1.2
0.75
0.95
1.2
V
V
I
C
=150mA,I
B
=15mA*
I
C
=500mA,I
B
=50mA*
Transition
Frequency
f
T
200
250
MHz I
C
=20mA,V
CE
=10V
f=100kHz
Output Capacitance C
obo
6.5
6.5
pF V
CB
=5 V,I
E
=0
f=100kHz
Input Capacitance
C
ibo
30
30
pF V
BE
=0.5V, I
C
=0
f=100kHz
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
FMMT4400
FMMT4401
C
B
E
PAGE NUMBER
FMMT4400
FMMT4401
PAGE NUMBER
SWITCHING CHARACTERISTICS (at T
amb
= 25C )
PARAMETER
SYMBOL
MIN.
MAX.
UNIT
CONDITIONS
Turn-On Time
t
on
35
ns
V
CC
=30V, V
BE(off )
=2V
I
C
=150mA, I
B1
=15mA
(See Fig.1)
Turn-Off Time
t
off
255
ns
V
CC
=30V, I
C
=150mA
I
B1
=I
B2
=15mA
(See Fig. 2)
SOT23 NPN SILICON PLANAR
GENERAL PURPOSE TRANSISTORS
ISSUE 4 FEBRUARY 1997
7
PARTMARKING DETAILS:
FMMT4400 - 1KZ
FMMT4401 - 1L
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
60
V
Collector-Emitter Voltage
V
CEO
40
V
Emitter-Base Voltage
V
EBO
6
V
Continuous Collector Current
I
C
600
mA
Power Dissipation at T
amb
=25C
P
tot
330
mW
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated)
PARAMETER
SYMBOL
FMMT4400
FMMT4401
UNIT CONDITIONS
MIN.
MAX.
MIN.
MAX.
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
40
40
V I
C
=1mA, I
B
=0
Collector-Base
Breakdown Voltage
V
(BR)CBO
60
60
V I
C
=0.1mA, I
E
=0
Emitter-Base
Breakdown Current
V
(BR)EBO
6
6
V I
E
=0.1mA, I
C
=0
Collector-Emitter
Cut-Off Current
I
CEX
0.1
0.1
A V
CE
=35V
V
EB(off)
=0.4V
Base Cut-Off
Current
I
BEX
0.1
0.1
A V
CE
=35V
V
EB(off)
=3V
Static Forward
Current
TransferRatio
h
FE
20
40
50
20
150
20
40
80
100
40
300
I
C
=0.1mA, V
CE
=1V
I
C
=1mA, V
CE
=1V
I
C
=10mA, V
CE
=1V
I
C
=150mA, V
CE
=1V*
I
C
=500mA, V
CE
=2V*
Collector-Emitter
Saturation Voltage
V
CE(sat)
0.4
0.75
0.4
0.75
V
V
I
C
=150mA,I
B
=15mA*
I
C
=500mA,I
B
=50mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
0.75
0.95
1.2
0.75
0.95
1.2
V
V
I
C
=150mA,I
B
=15mA*
I
C
=500mA,I
B
=50mA*
Transition
Frequency
f
T
200
250
MHz I
C
=20mA,V
CE
=10V
f=100kHz
Output Capacitance C
obo
6.5
6.5
pF V
CB
=5 V,I
E
=0
f=100kHz
Input Capacitance
C
ibo
30
30
pF V
BE
=0.5V, I
C
=0
f=100kHz
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
FMMT4400
FMMT4401
C
B
E
PAGE NUMBER
FMMT4400
FMMT4401
PAGE NUMBER