SOT23 NPN SILICON PLANAR
HIGH PERFORMANCE TRANSISTOR
ISSUE 3 FEBRUARY 1996
FEATURES
* 140 Volt V
CEO
* 1 Amp continuous current
* P
tot
= 500 mW
PARTMARKING DETAIL
455
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
160
V
Collector-Emitter Voltage
V
CEO
140
V
Emitter-Base Voltage
V
EBO
5
V
Peak Pulse Current
I
CM
2
A
Continuous Collector Current
I
C
1
A
Base Current
I
B
200
mA
Power Dissipation at T
amb
=25C
P
tot
500
mW
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C).
PARAMETER
SYMBOL
MIN. MAX.
UNIT
CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
160
V
I
C
=100
A
Collector-Emitter
Sustaining Voltage
V
CEO(sus)
140
V
I
C
=10mA*
Emitter-Base
Breakdown Voltage
V
(BR)EBO
5
V
I
E
=100
A
Collector Cut-Off Current I
CBO
0.1
A
V
CB
=140V
Emitter Cut-Off Current
I
EBO
0.1
A
V
EB
=4V
Collector-Emitter
Saturation Voltage
V
CE(sat)
0.7
V
I
C
=150mA, I
B
=15mA
Static Forward Current
Transfer Ratio
h
FE
100
10 Typ
300
I
C
=150mA, V
CE
=10V*
I
C
=1A, V
CE
=10V*
Transition
Frequency
f
T
100
MHz
I
C
=50mA, V
CE
=10V
f=100MHz
Output Capacitance
C
obo
15
pF
V
CB
=10V, f=1MHz
* Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
Spice parameter data is available upon request for this device
FMMT455
SOT23
C
B
E
FMMT455
3 - 110
3 - 111
TYPICAL CHARACTERISTICS
V
CE(sat)
v I
C
I
+
-
Collector Current (Amps)
V
-
(V
ol
ts
)
I
+
-
Collector Current (Amps)
I
+
-
Collector Current (Amps)
h
FE
v I
C
V
BE(sat)
v I
C
I
+
-
Collector Current (Amps)
V
BE(on)
v I
C
h
-
No
r
m
al
i
se
d
G
ai
n (
%)
V
-
(V
ol
ts
)
V
-
(V
ol
ts
)
Single Pulse Test at T
amb
=25C
0.001
0.01
10
0.1
1
20
40
60
80
100
0.2
0.001
0.1
1
0.4
0.6
1.0
0
0.001
0.01
1
0.1
0.1
0.2
0.3
0.4
V
CE
=10V
I
C
/I
B
=10
I
C
/I
B
=10
Typical Switching Speeds
I
+
-
Collector Current (Amps)
S
w
i
t
ch
i
ng
ti
m
e
0.1
1
0.01
tf
100
0
td
nS
50
0.01
0.0001
0.001
1
0.01
0.1
0.6
0.8
1.0
1.2
V
CE
=10V
0.4
0.8
tf
ns
900
tr
ns
300
200
100
400
500
0
600
500
400
700
800
300
ts
S
ts
td
tr
0
3
2
1
6
5
4
7
I
B1
=I
B2
=I
C
/10
V
CE
=10V
10
1
Safe Operating Area
V
CE
- Collector Emitter Voltage (V)
1
10
0.1
0.1
100
0.01
1s
DC
100ms
10ms
100
s
1ms
1000
0.001
SOT23 NPN SILICON PLANAR
HIGH PERFORMANCE TRANSISTOR
ISSUE 3 FEBRUARY 1996
FEATURES
* 140 Volt V
CEO
* 1 Amp continuous current
* P
tot
= 500 mW
PARTMARKING DETAIL
455
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
160
V
Collector-Emitter Voltage
V
CEO
140
V
Emitter-Base Voltage
V
EBO
5
V
Peak Pulse Current
I
CM
2
A
Continuous Collector Current
I
C
1
A
Base Current
I
B
200
mA
Power Dissipation at T
amb
=25C
P
tot
500
mW
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C).
PARAMETER
SYMBOL
MIN. MAX.
UNIT
CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
160
V
I
C
=100
A
Collector-Emitter
Sustaining Voltage
V
CEO(sus)
140
V
I
C
=10mA*
Emitter-Base
Breakdown Voltage
V
(BR)EBO
5
V
I
E
=100
A
Collector Cut-Off Current I
CBO
0.1
A
V
CB
=140V
Emitter Cut-Off Current
I
EBO
0.1
A
V
EB
=4V
Collector-Emitter
Saturation Voltage
V
CE(sat)
0.7
V
I
C
=150mA, I
B
=15mA
Static Forward Current
Transfer Ratio
h
FE
100
10 Typ
300
I
C
=150mA, V
CE
=10V*
I
C
=1A, V
CE
=10V*
Transition
Frequency
f
T
100
MHz
I
C
=50mA, V
CE
=10V
f=100MHz
Output Capacitance
C
obo
15
pF
V
CB
=10V, f=1MHz
* Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
Spice parameter data is available upon request for this device
FMMT455
SOT23
C
B
E
FMMT455
3 - 110
3 - 111
TYPICAL CHARACTERISTICS
V
CE(sat)
v I
C
I
+
-
Collector Current (Amps)
V
-
(V
ol
ts
)
I
+
-
Collector Current (Amps)
I
+
-
Collector Current (Amps)
h
FE
v I
C
V
BE(sat)
v I
C
I
+
-
Collector Current (Amps)
V
BE(on)
v I
C
h
-
No
r
m
al
i
se
d
G
ai
n (
%)
V
-
(V
ol
ts
)
V
-
(V
ol
ts
)
Single Pulse Test at T
amb
=25C
0.001
0.01
10
0.1
1
20
40
60
80
100
0.2
0.001
0.1
1
0.4
0.6
1.0
0
0.001
0.01
1
0.1
0.1
0.2
0.3
0.4
V
CE
=10V
I
C
/I
B
=10
I
C
/I
B
=10
Typical Switching Speeds
I
+
-
Collector Current (Amps)
S
w
i
t
ch
i
ng
ti
m
e
0.1
1
0.01
tf
100
0
td
nS
50
0.01
0.0001
0.001
1
0.01
0.1
0.6
0.8
1.0
1.2
V
CE
=10V
0.4
0.8
tf
ns
900
tr
ns
300
200
100
400
500
0
600
500
400
700
800
300
ts
S
ts
td
tr
0
3
2
1
6
5
4
7
I
B1
=I
B2
=I
C
/10
V
CE
=10V
10
1
Safe Operating Area
V
CE
- Collector Emitter Voltage (V)
1
10
0.1
0.1
100
0.01
1s
DC
100ms
10ms
100
s
1ms
1000
0.001
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