SOT23 NPN SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
ISSUE 3 OCTOBER 1995
FEATURES
* 400 Volt V
CEO
COMPLEMENTARY TYPE FMMT558
PARTMARKING DETAIL
458
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
400
V
Collector-Emitter Voltage
V
CEO
400
V
Emitter-Base Voltage
V
EBO
5
V
Continuous Collector Current
I
C
225
mA
Peak Pulse Current
I
CM
1
A
Base Current
I
B
200
mA
Power Dissipation at T
amb
=25C
P
tot
500
mW
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C).
PARAMETER
SYMBOL
MIN.
MAX.
UNIT
CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
400
V
I
C
=100
A
Collector-Emitter
Breakdown Voltage
V
CEO(sus)
400
V
I
C
=10mA*
Emitter-Base
Breakdown Voltage
V
(BR)EBO
5
V
I
E
=100
A
Collector Cut-Off Current
I
CBO
100
nA
V
CB
=320V
Collector Cut-Off Current
I
CES
100
nA
V
CE
=320V
Emitter Cut-Off Current
I
EBO
100
nA
V
EB
=4V
Collector-Emitter
Saturation Voltage
V
CE(sat)
0.2
0.5
V
V
I
C
=20mA, I
B
=2mA*
I
C
=50mA, I
B
=6mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
0.9
V
I
C
=50mA, I
B
=5mA*
Base-Emitter
Turn On Voltage
V
BE(on)
0.9
V
I
C
=50mA, V
CE
=10V*
Static Forward
Current Transfer Ratio
h
FE
100
100
15
300
I
C
=1mA, V
CE
=10V
I
C
=50mA, V
CE
=10V*
I
C
=100mA, V
CE
=10V*
Transition Frequency
f
T
50
MHz
I
C
=10mA, V
CE
=20V
f=20MHz
Collector-Base
Breakdown Voltage
C
obo
5
pF
V
CB
=20V, f=1MHz
Switching times
t
on
t
off
135 Typical
2260 Typical
ns
ns
I
C
=50mA, V
CC
=100V
I
B1
=5mA, I
B2
=-10mA
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
Spice parameter data is available upon request for this device
FMMT458
C
B
E
SOT23
3 - 113
3 - 112
FMMT458
0.01
0.1
20
1
10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
0.01
0.1
20
1
10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
0.01
0.1
20
1
10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
TYPICAL CHARACTERISTICS
V
CE(sat)
v I
C
I
+
-
Collector Current (Amps)
V
-
(V
olt
s)
T
amb
=25C
V
CE(sat)
v I
C
I
+
-
Collector Current (Amps)
V
- (
V
ol
ts
)
-55C
+25C
+100C
+175C
+100C
+25C
-55C
I
+
-
Collector Current (Amps)
I
+
-
Collector Current (Amps)
h
FE
v I
C
V
BE(sat)
v I
C
I
+
-
Collector Current (Amps)
V
BE(on)
v I
C
h
-
Norm
al
i
sed G
ai
n
V
-
(V
olt
s)
V
-
(V
olt
s)
I
-
Col
lect
or
Current
(Am
ps)
I
C
/I
B
=50
I
C
/I
B
=10
V
CE
=10V
V
CE
=10V
300
200
100
V
+-
-
Collector Voltage (Volts)
Safe Operating Area
100
1
10
0.001
0.01
0.1
1.0
Single Pulse Test at T
amb
=25C
D.C.
1s
100ms
10ms
1.0ms
0.1ms
0.001
0.001
0.01
0.1
20
1
10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
-55C
+25C
+100C
+175C
I
C
/I
B
=10
0.001
0.001
I
C
/I
B
=20
0.01
0.1
20
1
10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
-55C
+25C
+100C
+175C
I
C
/I
B
=10
0.001
1000
SOT23 NPN SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
ISSUE 3 OCTOBER 1995
FEATURES
* 400 Volt V
CEO
COMPLEMENTARY TYPE FMMT558
PARTMARKING DETAIL
458
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
400
V
Collector-Emitter Voltage
V
CEO
400
V
Emitter-Base Voltage
V
EBO
5
V
Continuous Collector Current
I
C
225
mA
Peak Pulse Current
I
CM
1
A
Base Current
I
B
200
mA
Power Dissipation at T
amb
=25C
P
tot
500
mW
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C).
PARAMETER
SYMBOL
MIN.
MAX.
UNIT
CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
400
V
I
C
=100
A
Collector-Emitter
Breakdown Voltage
V
CEO(sus)
400
V
I
C
=10mA*
Emitter-Base
Breakdown Voltage
V
(BR)EBO
5
V
I
E
=100
A
Collector Cut-Off Current
I
CBO
100
nA
V
CB
=320V
Collector Cut-Off Current
I
CES
100
nA
V
CE
=320V
Emitter Cut-Off Current
I
EBO
100
nA
V
EB
=4V
Collector-Emitter
Saturation Voltage
V
CE(sat)
0.2
0.5
V
V
I
C
=20mA, I
B
=2mA*
I
C
=50mA, I
B
=6mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
0.9
V
I
C
=50mA, I
B
=5mA*
Base-Emitter
Turn On Voltage
V
BE(on)
0.9
V
I
C
=50mA, V
CE
=10V*
Static Forward
Current Transfer Ratio
h
FE
100
100
15
300
I
C
=1mA, V
CE
=10V
I
C
=50mA, V
CE
=10V*
I
C
=100mA, V
CE
=10V*
Transition Frequency
f
T
50
MHz
I
C
=10mA, V
CE
=20V
f=20MHz
Collector-Base
Breakdown Voltage
C
obo
5
pF
V
CB
=20V, f=1MHz
Switching times
t
on
t
off
135 Typical
2260 Typical
ns
ns
I
C
=50mA, V
CC
=100V
I
B1
=5mA, I
B2
=-10mA
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
Spice parameter data is available upon request for this device
FMMT458
C
B
E
SOT23
3 - 113
3 - 112
FMMT458
0.01
0.1
20
1
10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
0.01
0.1
20
1
10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
0.01
0.1
20
1
10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
TYPICAL CHARACTERISTICS
V
CE(sat)
v I
C
I
+
-
Collector Current (Amps)
V
-
(V
olt
s)
T
amb
=25C
V
CE(sat)
v I
C
I
+
-
Collector Current (Amps)
V
- (
V
ol
ts
)
-55C
+25C
+100C
+175C
+100C
+25C
-55C
I
+
-
Collector Current (Amps)
I
+
-
Collector Current (Amps)
h
FE
v I
C
V
BE(sat)
v I
C
I
+
-
Collector Current (Amps)
V
BE(on)
v I
C
h
-
Norm
al
i
sed G
ai
n
V
-
(V
olt
s)
V
-
(V
olt
s)
I
-
Col
lect
or
Current
(Am
ps)
I
C
/I
B
=50
I
C
/I
B
=10
V
CE
=10V
V
CE
=10V
300
200
100
V
+-
-
Collector Voltage (Volts)
Safe Operating Area
100
1
10
0.001
0.01
0.1
1.0
Single Pulse Test at T
amb
=25C
D.C.
1s
100ms
10ms
1.0ms
0.1ms
0.001
0.001
0.01
0.1
20
1
10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
-55C
+25C
+100C
+175C
I
C
/I
B
=10
0.001
0.001
I
C
/I
B
=20
0.01
0.1
20
1
10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
-55C
+25C
+100C
+175C
I
C
/I
B
=10
0.001
1000
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