SOT23 NPN SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE3 - OCTOBER 1995
7
FEATURES
* Very low equivalent on-resistance; R
CE(sat)
175m
at 1A
COMPLEMENTARY TYPE FMMT589
PARTMARKING DETAIL
489
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
50
V
Collector-Emitter Voltage
V
CEO
30
V
Emitter-Base Voltage
V
EBO
5
V
Continuous Collector Current
I
C
1
A
Peak Pulse Current
I
CM
4
A
Base Current
I
B
200
mA
Power Dissipation at T
amb
=25C
P
tot
500
mW
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C).
PARAMETER
SYMBOL
MIN.
MAX.
UNIT
CONDITIONS.
Breakdown Voltages
V
(BR)CBO
50
V
I
C
=100
A
V
CEO(sus)
30
V
I
C
=10mA*
V
(BR)EBO
5
V
I
E
=100
A
Collector Cut-Off Current
I
CBO
100
nA
V
CB
=30V
I
CES
100
nA
V
CES
=30V
Emitter Cut-Off Current
I
EBO
100
nA
V
EB
=4V
Collector-Emitter
Saturation Voltage
V
CE(sat)
0.3
0.6
V
V
I
C
=1A, I
B
=100mA*
I
C
=2A, I
B
=200mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
1.1
V
I
C
=1A, I
B
=100mA*
Base-Emitter
Turn On Voltage
V
BE(on)
1.0
V
I
C
=1A, V
CE
=2V*
Static Forward Current
Transfer Ratio
h
FE
100
100
60
20
300
I
C
=1mA, V
CE
=2V*
I
C
=1A, V
CE
=2V*
I
C
=2A, V
CE
=2V*
I
C
=4A, V
CE
=2V*
Transition Frequency
f
T
150
MHz
I
C
=50mA, V
CE
=10V
f=100MHz
Collector-Base
Breakdown Voltage
C
obo
10
pF
V
CB
=10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
For typical characteristics graphs see FMMT449 datasheet
FMMT489
C
B
E
3 - 114
PDF 
ZIP