SOT23 NPN SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 3 - OCTOBER 1995
7
FEATURES
* Low equivalent on-resistance; R
CE(sat)
210m
at 1A
COMPLEMENTARY TYPE -
FMMT591
PARTMARKING DETAIL -
491
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
80
V
Collector-Emitter Voltage
V
CEO
60
V
Emitter-Base Voltage
V
EBO
5
V
Continuous Collector Current
I
C
1
A
Peak Pulse Current
I
CM
2
A
Power Dissipation at T
amb
=25C
P
tot
500
mW
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C).
PARAMETER
SYMBOL
MIN.
MAX.
UNIT
CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
80
V
I
C
=100
A
Collector-Emitter
Breakdown Voltage
V
CEO(sus)
60
V
I
C
=10mA*
Emitter-Base
Breakdown Voltage
V
(BR)EBO
5
V
I
E
=100
A
Collector Cut-Off Current
I
CBO
100
nA
V
CB
=60V
Collector Cut-Off Current
I
CES
100
nA
V
CES
=60V
Emitter Cut-Off Current
I
EBO
100
nA
V
EB
=4V
Collector-Emitter
Saturation Voltage
V
CE(sat)
0.25
0.50
V
V
I
C
=500mA, I
B
=50mA*
I
C
=1A, I
B
=100mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
1.1
V
I
C
=1A, I
B
=100mA*
Base-Emitter
Turn On Voltage
V
BE(on)
1.0
V
I
C
=1A, V
CE
=5V*
Static Forward Current
Transfer Ratio
h
FE
100
100
80
30
300
I
C
=1mA, V
CE
=5V
I
C
=500mA, V
CE
=5V*
I
C
=1A, V
CE
=5V*
I
C
=2A, V
CE
=5V*
Transition Frequency
f
T
150
MHz
I
C
=50mA, V
CE
=10V
f=100MHz
Collector-Base
Breakdown Voltage
C
obo
10
pF
V
CB
=10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
FMMT491
C
B
E
SOT23
3 - 115
FMMT491
3 - 116
10A
1A
10mA
100mA
1mA
-55 C
+25 C
+100 C
I
+
/I
*
=10
V
CE(sat)
v I
C
I
C
-Collector Current
I
C
-Collector Current
V
BE(sat)
v I
C
0
0.2
100mA
10mA
0.4
0.6
0.8
1.0
10A
1A
h
FE
V I
C
I
C
-Collector Current
1mA
100mA
10mA
10A
1A
100
0
300
200
400
10mA
1mA
I
C
-Collector Current
V
BE(on)
v I
C
100mA
1A
10A
0.6
0.8
1.0
1.2
0.4
0.2
0
I
C
-Collector Current
V
CE(sat)
v I
C
1mA
0
0.1
100mA
10mA
+25 C
0.2
0.3
0.4
0.5
I
+
/I
*
=10
10A
1A
+100 C
-55 C
+25 C
+100 C
-55 C
+25 C
-55 C
+25 C
+100 C
I
+
/I
*
=10
V
+-
=5V
V
+-
=5V
10
1
0.1
Safe Operating Area
V
CE
- Collector Emitter Voltage (V)
0.1V
10V
100V
1s
DC
100ms
10ms
100us
1ms
1V
0
1mA
0.01
I
+
/I
*
=50
0.6
0.1
0.2
0.3
0.4
0.5
0.6
TYPICAL CHARACTERISTICS
SOT23 NPN SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 3 - OCTOBER 1995
7
FEATURES
* Low equivalent on-resistance; R
CE(sat)
210m
at 1A
COMPLEMENTARY TYPE -
FMMT591
PARTMARKING DETAIL -
491
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
80
V
Collector-Emitter Voltage
V
CEO
60
V
Emitter-Base Voltage
V
EBO
5
V
Continuous Collector Current
I
C
1
A
Peak Pulse Current
I
CM
2
A
Power Dissipation at T
amb
=25C
P
tot
500
mW
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C).
PARAMETER
SYMBOL
MIN.
MAX.
UNIT
CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
80
V
I
C
=100
A
Collector-Emitter
Breakdown Voltage
V
CEO(sus)
60
V
I
C
=10mA*
Emitter-Base
Breakdown Voltage
V
(BR)EBO
5
V
I
E
=100
A
Collector Cut-Off Current
I
CBO
100
nA
V
CB
=60V
Collector Cut-Off Current
I
CES
100
nA
V
CES
=60V
Emitter Cut-Off Current
I
EBO
100
nA
V
EB
=4V
Collector-Emitter
Saturation Voltage
V
CE(sat)
0.25
0.50
V
V
I
C
=500mA, I
B
=50mA*
I
C
=1A, I
B
=100mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
1.1
V
I
C
=1A, I
B
=100mA*
Base-Emitter
Turn On Voltage
V
BE(on)
1.0
V
I
C
=1A, V
CE
=5V*
Static Forward Current
Transfer Ratio
h
FE
100
100
80
30
300
I
C
=1mA, V
CE
=5V
I
C
=500mA, V
CE
=5V*
I
C
=1A, V
CE
=5V*
I
C
=2A, V
CE
=5V*
Transition Frequency
f
T
150
MHz
I
C
=50mA, V
CE
=10V
f=100MHz
Collector-Base
Breakdown Voltage
C
obo
10
pF
V
CB
=10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
FMMT491
C
B
E
SOT23
3 - 115
FMMT491
3 - 116
10A
1A
10mA
100mA
1mA
-55 C
+25 C
+100 C
I
+
/I
*
=10
V
CE(sat)
v I
C
I
C
-Collector Current
I
C
-Collector Current
V
BE(sat)
v I
C
0
0.2
100mA
10mA
0.4
0.6
0.8
1.0
10A
1A
h
FE
V I
C
I
C
-Collector Current
1mA
100mA
10mA
10A
1A
100
0
300
200
400
10mA
1mA
I
C
-Collector Current
V
BE(on)
v I
C
100mA
1A
10A
0.6
0.8
1.0
1.2
0.4
0.2
0
I
C
-Collector Current
V
CE(sat)
v I
C
1mA
0
0.1
100mA
10mA
+25 C
0.2
0.3
0.4
0.5
I
+
/I
*
=10
10A
1A
+100 C
-55 C
+25 C
+100 C
-55 C
+25 C
-55 C
+25 C
+100 C
I
+
/I
*
=10
V
+-
=5V
V
+-
=5V
10
1
0.1
Safe Operating Area
V
CE
- Collector Emitter Voltage (V)
0.1V
10V
100V
1s
DC
100ms
10ms
100us
1ms
1V
0
1mA
0.01
I
+
/I
*
=50
0.6
0.1
0.2
0.3
0.4
0.5
0.6
TYPICAL CHARACTERISTICS
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