NPN: V
CEO
= 60V, I
C
= 1A, VCE(SAT) = 0.5V @1A
Description:
This 60V NPN transistor provides users with
performance combining low saturation and high h
FE
with a continuous current capability of 1A, ensuring
improved circuit efficiencies.
Features
Low saturation voltage
High h
FE
min 300 @ 250mA
I
C
= 1A
Applications
Various driving functions including:-
- Motors
- Actuators
- Soleniod & Relays
Backlight Inverters.
DC_DC Modules.
FMMT493A
ISSUE 1 - OCTOBER 2001
1
SOT23 60V NPN SILICON PLANAR
MEDIUM POWER PLANAR TRANSISTOR
C
B
E
SOT23
Device
Reel Size
Tape Width
Quantity
(inches)
(mm)
Per Reel
FMMT493ATA
7
8mm embossed
3000 units
FMMT493ATC
13
8mm embossed
10000 units
C
E
B
TOP VIEW
FMMT493A
ISSUE 1 - OCTOBER 2001
2
PARAMETER
SYMBOL
MIN.
MAX.
UNIT
CONDITIONS.
Collector - Base
Breakdown Voltage
V
(BR)CBO
120
V
I
C
= 100 A
Collector - Emitter
Breakdown Voltage
V
CEO(SUS)
60
V
I
C
= 10mA*
Emitter - Base
Breakdown Voltage
V
(BR)EBO
5
V
I
E
= 100 A
Collector Cut-Off Current
I
CBO
100
nA
V
CB
= 45V
Collector Cut-Off Current
I
CES
100
nA
V
CES
= 45V
Emitter Cut-Off Current
I
EBO
100
nA
V
EB
= 4V
Collector - Emitter
Saturation Voltage
V
CE(SAT)
0.25
0.5
V
V
I
C
= 500mA, I
B
= 50mA
I
C
= 1A, I
B
= 100mA
Base - Emitter Saturation
Voltage
V
BE(SAT)
1.15
V
I
C
=1A, I
B
= 100mA
Base Emitter Turn On
Voltage
V
BE(ON)
1.0
V
I
C
= 1A, V
CE
- 10V
Static Forward Current
Transfer Ratio
h
FE
300
500
300
100
20
1200
I
C
= 1mA, V
CE
= 10V
I
C
= 150mA, V
CE
= 10V
I
C
= 250mA, V
CE
= 10V
I
C
= 500mA, V
CE
= 10V
I
C
= 1A, V
CE
= 10V
Transition Frequency
f
T
150
Mhz
I
C
= 50mA, V
CE
= 10V
f = 100MHz
Collector - Base
Breakdown Voltage
C
OBO
10
pF
V
CB
= 10V, f = 1MHz
ELECTRICAL CHARACTERISTICS (at Tamb = 25 C).
*Measured under pulsed conditions. Pulse width = 300 s. Duty Cycle <2%
FMMT493A
ISSUE 1 - OCTOBER 2001
4
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
120
V
Collector-Emitter Voltage
V
CEO
60
V
Emitter-Base Voltage
V
EBO
5
V
Continuous Collector Current
I
C
1
A
Peak Pulse Current
I
CM
2
A
Base Current
I
B
200
mA
Power Dissipation at T
amb
=25C
P
tot
500
mW
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
C
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Junction to Ambient (a)
R
JA
250
C/W
Mounted on a 15mm x 15mm x 0.6mm alumina substrate connected using 25mm x 0.5 dia copper wire.
THERMAL RESISTANCE
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