SOT23 NPN SILICON PLANAR MEDIUM
POWER HIGH PERFORMANCE TRANSISTOR
ISSUE 3 - NOVEMBER 1995
7
PARTMARKING DETAIL
495
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
170
V
Collector-Emitter Voltage
V
CEO
150
V
Emitter-Base Voltage
V
EBO
5
V
Continuous Collector Current
I
C
1
A
Peak Pulse Current
I
CM
2
A
Base Current
I
B
200
mA
Power Dissipation at T
amb
=25C
P
tot
500
mW
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C).
PARAMETER
SYMBOL
MIN.
MAX.
UNIT
CONDITIONS.
Breakdown Voltages
V
(BR)CBO
170
V
I
C
=100
A
V
CEO(sus)
150
V
I
C
=10mA*
V
(BR)EBO
5
V
I
E
=100
A
Collector Cut-Off Currents
I
CBO
100
nA
V
CB
=150V
I
CES
100
nA
V
CE
=150V
Emitter Cut-Off Current
I
EBO
100
nA
V
EB
=4V
Collector-Emitter
Saturation Voltage
V
CE(sat)
0.2
0.3
V
V
I
C
=250mA, I
B
=25mA*
I
C
=500mA, I
B
=50mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
1.0
V
I
C
=500mA, I
B
=50mA*
Base-Emitter
Turn On Voltage
V
BE(on)
1.0
V
I
C
=500mA, V
CE
=10V*
Static Forward Current
Transfer Ratio
h
FE
100
100
50
10
300
I
C
=1mA, V
CE
=10V
I
C
=250mA, V
CE
=10V*
I
C
=500mA, V
CE
=10V*
I
C
=1A, V
CE
=10V*
Transition Frequency
f
T
100
MHz
I
C
=50mA, V
CE
=10V
f=100MHz
Collector-Base
Breakdown Voltage
C
obo
10
pF
V
CB
=10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
FMMT495
C
B
E
3 - 123
FMMT495
3 - 124
10A
1A
10mA
100mA
1mA
-55 C
+25 C
+100 C
I
+
/I
*
=10
V
CE(sat)
v I
C
I
C
-Collector Current
I
C
-Collector Current
V
BE(sat)
v I
C
0
0.2
100mA
10mA
0.4
0.6
0.8
1.0
10A
1A
h
FE
V I
C
I
C
-Collector Current
1mA
100mA
10mA
10A
1A
80
0
240
160
320
10mA
1mA
I
C
-Collector Current
V
BE(on)
v I
C
100mA
1A
10A
0.6
0.8
1.0
0.4
0.2
0
I
C
-Collector Current
V
CE(sat)
v I
C
1mA
0
0.1
100mA
10mA
+25 C
0.2
0.3
0.4
I
+
/I
*
=10
10A
1A
0.4
+100 C
-55 C
+25 C
+100 C
-55 C
+25 C
-55 C
+25 C
+100 C
I
+
/I
*
=10
V
+-
=10V
V
+-
=10V
10
1
0.1
Safe Operating Area
V
CE
- Collector Emitter Voltage (V)
0.1
10
100
1s
DC
100ms
10ms
100
s
1ms
1
0
0.1
0.3
0.2
1mA
0.01
I
+
/I
*
=50
0.001
1000
TYPICAL CHARACTERISTICS
SOT23 NPN SILICON PLANAR MEDIUM
POWER HIGH PERFORMANCE TRANSISTOR
ISSUE 3 - NOVEMBER 1995
7
PARTMARKING DETAIL
495
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
170
V
Collector-Emitter Voltage
V
CEO
150
V
Emitter-Base Voltage
V
EBO
5
V
Continuous Collector Current
I
C
1
A
Peak Pulse Current
I
CM
2
A
Base Current
I
B
200
mA
Power Dissipation at T
amb
=25C
P
tot
500
mW
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C).
PARAMETER
SYMBOL
MIN.
MAX.
UNIT
CONDITIONS.
Breakdown Voltages
V
(BR)CBO
170
V
I
C
=100
A
V
CEO(sus)
150
V
I
C
=10mA*
V
(BR)EBO
5
V
I
E
=100
A
Collector Cut-Off Currents
I
CBO
100
nA
V
CB
=150V
I
CES
100
nA
V
CE
=150V
Emitter Cut-Off Current
I
EBO
100
nA
V
EB
=4V
Collector-Emitter
Saturation Voltage
V
CE(sat)
0.2
0.3
V
V
I
C
=250mA, I
B
=25mA*
I
C
=500mA, I
B
=50mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
1.0
V
I
C
=500mA, I
B
=50mA*
Base-Emitter
Turn On Voltage
V
BE(on)
1.0
V
I
C
=500mA, V
CE
=10V*
Static Forward Current
Transfer Ratio
h
FE
100
100
50
10
300
I
C
=1mA, V
CE
=10V
I
C
=250mA, V
CE
=10V*
I
C
=500mA, V
CE
=10V*
I
C
=1A, V
CE
=10V*
Transition Frequency
f
T
100
MHz
I
C
=50mA, V
CE
=10V
f=100MHz
Collector-Base
Breakdown Voltage
C
obo
10
pF
V
CB
=10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
FMMT495
C
B
E
3 - 123
FMMT495
3 - 124
10A
1A
10mA
100mA
1mA
-55 C
+25 C
+100 C
I
+
/I
*
=10
V
CE(sat)
v I
C
I
C
-Collector Current
I
C
-Collector Current
V
BE(sat)
v I
C
0
0.2
100mA
10mA
0.4
0.6
0.8
1.0
10A
1A
h
FE
V I
C
I
C
-Collector Current
1mA
100mA
10mA
10A
1A
80
0
240
160
320
10mA
1mA
I
C
-Collector Current
V
BE(on)
v I
C
100mA
1A
10A
0.6
0.8
1.0
0.4
0.2
0
I
C
-Collector Current
V
CE(sat)
v I
C
1mA
0
0.1
100mA
10mA
+25 C
0.2
0.3
0.4
I
+
/I
*
=10
10A
1A
0.4
+100 C
-55 C
+25 C
+100 C
-55 C
+25 C
-55 C
+25 C
+100 C
I
+
/I
*
=10
V
+-
=10V
V
+-
=10V
10
1
0.1
Safe Operating Area
V
CE
- Collector Emitter Voltage (V)
0.1
10
100
1s
DC
100ms
10ms
100
s
1ms
1
0
0.1
0.3
0.2
1mA
0.01
I
+
/I
*
=50
0.001
1000
TYPICAL CHARACTERISTICS
PDF 
ZIP