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Электронный компонент: FMMT497

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SOT23 NPN SILICON PLANAR HIGH VOLTAGE
HIGH PERFORMANCE TRANSISTOR
ISSUE 3 DECEMBER 1995
7
COMPLIMENTARY TYPE
FMMT597
PARTMARKING DETAIL
497
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
300
V
Collector-Emitter Voltage
V
CEO
300
V
Emitter-Base Voltage
V
EBO
5
V
Continuous Collector Current
I
C
500
mA
Peak Pulse Current
I
CM
1
A
Base Current
I
B
200
mA
Power Dissipation at T
amb
=25C
P
tot
500
mW
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C).
PARAMETER
SYMBOL
MIN.
MAX.
UNIT
CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
300
V
I
C
=100
A
Collector-Emitter
Breakdown Voltage
V
CEO(sus)
300
V
I
C
=10mA*
Emitter-Base
Breakdown Voltage
V
(BR)EBO
5
V
I
E
=100
A
Collector Cut-Off Current
I
CBO
100
nA
V
CB
=250V
Collector Cut-Off Current
I
CES
100
nA
V
CES
=250V
Emitter Cut-Off Current
I
EBO
100
nA
V
EB
=4V
Collector-Emitter
Saturation Voltage
V
CE(sat)
0.2
0.3
V
V
I
C
=100mA, I
B
=10mA
I
C
=250mA, I
B
=25mA
Base-Emitter
Saturation Voltage
V
BE(sat)
1.0
V
I
C
=250mA, I
B
=25mA
Base-Emitter
Turn On Voltage
V
BE(on)
1.0
V
I
C
=250mA, V
CE
=10V
Static Forward Current
Transfer Ratio
h
FE
100
80
20
300
I
C
=1mA, V
CE
=10V
I
C
=100mA, V
CE
=10V*
I
C
=250mA, V
CE
=10V*
Transition Frequency
f
T
75
MHz
I
C
=50mA, V
CE
=10V
f=100MHz
Collector-Base
Breakdown Voltage
C
obo
5
pF
V
CB
=10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
FMMT497
C
B
E
SOT23
3 - 125
3 - 126
FMMT497
1A
10mA
100mA
1mA
-55 C
+25 C
+100 C
I
+
/I
*
=10
V
CE(sat)
v I
C
I
C
-Collector Current
I
C
-Collector Current
V
BE(sat)
v I
C
0
0.2
100mA
10mA
0.4
0.6
0.8
1A
h
FE
V I
C
I
C
-Collector Current
1mA
100mA
10mA
1A
100
0
300
200
400
10mA
1mA
I
C
-Collector Current
V
BE(on)
v I
C
100mA
1A
0
I
C
-Collector Current
V
CE(sat)
v I
C
1mA
0
0.1
100mA
10mA
+25 C
0.2
0.3
0.4
I
+
/I
*
=10
1A
+100 C
-55 C
+25 C
+100 C
-55 C
+25 C
-55 C
+25 C
+100 C
I
+
/I
*
=10
V
+-
=10V
V
+-
=10V
1
0.1
Safe Operating Area
V
CE
- Collector Emitter Voltage (V)
0.1
10
100
1s
DC
100ms
10ms
100
s
1ms
1
0
1mA
0.01
I
+
/I
*
=50
0.5
0.6
0.1
0.2
0.3
0.4
0.5
0.6
0.9
0.2
0.4
0.6
0.8
0.9
1000
0.001
TYPICAL CHARACTERISTICS
SOT23 NPN SILICON PLANAR HIGH VOLTAGE
HIGH PERFORMANCE TRANSISTOR
ISSUE 3 DECEMBER 1995
7
COMPLIMENTARY TYPE
FMMT597
PARTMARKING DETAIL
497
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
300
V
Collector-Emitter Voltage
V
CEO
300
V
Emitter-Base Voltage
V
EBO
5
V
Continuous Collector Current
I
C
500
mA
Peak Pulse Current
I
CM
1
A
Base Current
I
B
200
mA
Power Dissipation at T
amb
=25C
P
tot
500
mW
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C).
PARAMETER
SYMBOL
MIN.
MAX.
UNIT
CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
300
V
I
C
=100
A
Collector-Emitter
Breakdown Voltage
V
CEO(sus)
300
V
I
C
=10mA*
Emitter-Base
Breakdown Voltage
V
(BR)EBO
5
V
I
E
=100
A
Collector Cut-Off Current
I
CBO
100
nA
V
CB
=250V
Collector Cut-Off Current
I
CES
100
nA
V
CES
=250V
Emitter Cut-Off Current
I
EBO
100
nA
V
EB
=4V
Collector-Emitter
Saturation Voltage
V
CE(sat)
0.2
0.3
V
V
I
C
=100mA, I
B
=10mA
I
C
=250mA, I
B
=25mA
Base-Emitter
Saturation Voltage
V
BE(sat)
1.0
V
I
C
=250mA, I
B
=25mA
Base-Emitter
Turn On Voltage
V
BE(on)
1.0
V
I
C
=250mA, V
CE
=10V
Static Forward Current
Transfer Ratio
h
FE
100
80
20
300
I
C
=1mA, V
CE
=10V
I
C
=100mA, V
CE
=10V*
I
C
=250mA, V
CE
=10V*
Transition Frequency
f
T
75
MHz
I
C
=50mA, V
CE
=10V
f=100MHz
Collector-Base
Breakdown Voltage
C
obo
5
pF
V
CB
=10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
FMMT497
C
B
E
SOT23
3 - 125
3 - 126
FMMT497
1A
10mA
100mA
1mA
-55 C
+25 C
+100 C
I
+
/I
*
=10
V
CE(sat)
v I
C
I
C
-Collector Current
I
C
-Collector Current
V
BE(sat)
v I
C
0
0.2
100mA
10mA
0.4
0.6
0.8
1A
h
FE
V I
C
I
C
-Collector Current
1mA
100mA
10mA
1A
100
0
300
200
400
10mA
1mA
I
C
-Collector Current
V
BE(on)
v I
C
100mA
1A
0
I
C
-Collector Current
V
CE(sat)
v I
C
1mA
0
0.1
100mA
10mA
+25 C
0.2
0.3
0.4
I
+
/I
*
=10
1A
+100 C
-55 C
+25 C
+100 C
-55 C
+25 C
-55 C
+25 C
+100 C
I
+
/I
*
=10
V
+-
=10V
V
+-
=10V
1
0.1
Safe Operating Area
V
CE
- Collector Emitter Voltage (V)
0.1
10
100
1s
DC
100ms
10ms
100
s
1ms
1
0
1mA
0.01
I
+
/I
*
=50
0.5
0.6
0.1
0.2
0.3
0.4
0.5
0.6
0.9
0.2
0.4
0.6
0.8
0.9
1000
0.001
TYPICAL CHARACTERISTICS