SOT23 PNP SILICON PLANAR
HIGH VOLTAGE TRANSISTORS
ISSUE 4 - NOVEMBER 1996 7
PARTMARKING DETAILS -
FMMT5400 - 1LZ
FMMT5401 - Z2L
COMPLEMENTARY TYPES - FMMT5400 FMMT5550
FMMT5401 FMMT5551
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
FMMT5400 FMMT5401
UNIT
Collector-Base Voltage
V
CBO
-130
-160
V
Collector-Emitter Voltage
V
CEO
-120
-150
V
Emitter-Base Voltage
V
EBO
-5
-5
V
Continuous Collector Current
I
C
-600
-600
mA
Power Dissipation at T
amb
=25C
P
tot
330
330
mW
Operating and Storage Temperature Range T
j
:T
stg
-55 to +150
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C).
FMMT5400
FMMT5401
PARAMETER
SYMBOL MIN.
MAX. MIN.
MAX.
UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
-130
-160
V
I
C
=-100
A
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
-120
-150
V
I
C
=-1mA
Emitter-Base
Breakdown Voltage
V
(BR)EBO
-5
-5
V
I
E
=-10
A
Collector Cut-Off
Current
I
CBO
-100
-100
-50
-50
nA
A
nA
A
V
CB
=-100V
V
CB
=-100V, T
A
=100C
V
CB
=-120V
V
CB
=-120V, T
A
=100C
Static Forward
Current Transfer
Ratio
h
FE
30
40
40
-180
50
60
50
240
I
C
=-1mA, V
CE
=-5V
I
C
=-10mA, V
CE
=-5V
I
C
=-50mA, V
CE
=-5V
Collector-Emitter
Saturation Voltage
V
CE(sat)
-0.2
-0.5
-0.2
-0.5
V
V
I
C
=-10mA, I
B
=-1mA
I
C
=-50mA, I
B
=-5mA
Base-Emitter
Saturation Voltage
V
BE(sat)
-1.0
-1.0
-1.0
-1.0
V
V
I
C
=-10mA, I
B
=-1mA
I
C
=-50mA, I
B
=-5mA
Transition
Frequency
f
T
100
400
100
300
MHz I
C
=-10mA, V
CE
=-10V
f=100MHz
Output Capacitance
C
obo
6.0
6.0
pF V
CB
=-10V, f=1MHz
Small Signal
h
fe
30
200
40
260
I
C
=-1mA, V
CE
=-10V
f=1KHz
Noise Figure
NF
8
8
dB I
C
=-250
A, V
CE
=-5V,
R
S
=1K
f=10Hz to 15.7KHz
Periodic Sample Test Only
FMMT5400
FMMT5401
C
B
E
PAGE NUMBER
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