SOT23 PNP SILICON PLANAR
MEDIUM POWER TRANSISTORS
ISSUE 3 - OCTOBER 1995
7
FEATURES
* Low equivalent on-resistance; R
CE(sat)
250m
at 1A
* 1 Amp continuous current
COMPLEMENTARY TYPES FMMT549 - FMMT449
FMMT549A - N/A
PARTMARKING DETAIL
FMMT549 - 549
FMMT549A - 59A
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
-35
V
Collector-Emitter Voltage
V
CEO
-30
V
Emitter-Base Voltage
V
EBO
-5
V
Peak Pulse Current
I
CM
-2
A
Continuous Collector Current
I
C
-1
A
Base Current
I
B
-200
mA
Power Dissipation: at T
amb
=25C
P
tot
500
mW
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
TYP.
MAX. UNIT
CONDITIONS.
Breakdown Voltages
V
(BR)CBO
-35
V
I
C
=-100
A
V
(BR)CEO
-30
V
I
C
=-10mA*
V
(BR)EBO
-5
V
I
E
=-100
A
Cut-Off Currents
I
CBO
-0.1
-10
A
A
V
CB
=-30V
V
CB
=-30V, T
amb
=100C
I
EBO
-0.1
A
V
EB
=-4V
Saturation Voltages
V
CE(sat)
-0.25
-0.50
-0.50
-0.75
V
V
I
C
=-1A, I
B
=-100mA*
I
C
=-2A, I
B
=-200mA*
FMMT549A
-0.30
V
I
C
=-100mA, I
B
=-1mA*
V
BE(sat)
-0.9
-1.25
V
I
C
=-1A, I
B
=-100mA*
Base Emitter Turn-on Voltage V
BE(on)
-0.85
-1
V
I
C
=-1A, V
CE
=-2V*
Static Forward Current
Transfer Ratio
h
FE
70
80
40
200
130
80
I
C
=-50mA, V
CE
=-2V*
I
C
=-1A, V
CE
=-2V*
I
C
=-2A, V
CE
=-2V*
FMMT549
100
160
300
I
C
=-500mA, V
CE
=-2V*
FMMT549A
150
200
500
I
C
=-500mA, V
CE
=-2V*
Transition Frequency
f
T
100
MHz
I
C
=-100mA, V
CE
=-5V
f=100MHz
Output Capacitance
C
obo
25
pF
V
CB
=-10V, f=1MHz
Switching Times
t
on
50
ns
I
C
=-500mA, V
CC
=-10V
I
B1
=I
B2
=-50mA
t
off
300
ns
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
FMMT549
FMMT549A
C
B
E
3 - 127
FMMT549
FMMT549A
3 - 128
0.1
1
TYPICAL CHARACTERISTICS
V
CE(sat)
v I
C
I
+
-
Collector Current (Amps)
V
-
(
V
ol
t
s)
Switching Speeds
I
+
-
Collector Current (Amps)
Sw
i
tchi
n
g
ti
m
e
I
+
-
Collector Current (Amps)
I
+
-
Collector Current (Amps)
h
FE
v I
C
V
BE(sat)
v I
C
I
+
-
Collector Current (Amps)
V
BE(on)
v I
C
h
- G
a
i
n
V
- (
V
ol
t
s)
V
-
(V
ol
t
s)
I
B1
=I
B2
=I
C
/10
Single Pulse Test at T
amb
=25C
0.7
0.8
0.9
1.0
0.01
0.001
0.01
10
0.1
1
40
80
120
160
200
0.01
10
0.1
1
I
C
/I
B
=100
0.001
0.01
0.1
1
I
C
/I
B
=10
0.01
0.1
10
1
I
C
/I
B
=100
0.6
V
CE
=2V
I
C
/I
B
=10
I
C
/I
B
=10
0.6
0.8
1.0
1.2
1.4
0.2
0.4
0.6
0.8
0
100
80
60
40
0
20
160
140
120
td,tr,tf
(ns)
180
1000
800
600
400
0
200
1600
1400
1200
ts
(ns)
1800
tr
ts
tf
td
10
1
0.1
Safe Operating Area
V
CE
- Collector Emitter Voltage (V)
10
100
1s
DC
100ms
10ms
100
s
1ms
1
0.01
0.1
10
SOT23 PNP SILICON PLANAR
MEDIUM POWER TRANSISTORS
ISSUE 3 - OCTOBER 1995
7
FEATURES
* Low equivalent on-resistance; R
CE(sat)
250m
at 1A
* 1 Amp continuous current
COMPLEMENTARY TYPES FMMT549 - FMMT449
FMMT549A - N/A
PARTMARKING DETAIL
FMMT549 - 549
FMMT549A - 59A
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
-35
V
Collector-Emitter Voltage
V
CEO
-30
V
Emitter-Base Voltage
V
EBO
-5
V
Peak Pulse Current
I
CM
-2
A
Continuous Collector Current
I
C
-1
A
Base Current
I
B
-200
mA
Power Dissipation: at T
amb
=25C
P
tot
500
mW
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
TYP.
MAX. UNIT
CONDITIONS.
Breakdown Voltages
V
(BR)CBO
-35
V
I
C
=-100
A
V
(BR)CEO
-30
V
I
C
=-10mA*
V
(BR)EBO
-5
V
I
E
=-100
A
Cut-Off Currents
I
CBO
-0.1
-10
A
A
V
CB
=-30V
V
CB
=-30V, T
amb
=100C
I
EBO
-0.1
A
V
EB
=-4V
Saturation Voltages
V
CE(sat)
-0.25
-0.50
-0.50
-0.75
V
V
I
C
=-1A, I
B
=-100mA*
I
C
=-2A, I
B
=-200mA*
FMMT549A
-0.30
V
I
C
=-100mA, I
B
=-1mA*
V
BE(sat)
-0.9
-1.25
V
I
C
=-1A, I
B
=-100mA*
Base Emitter Turn-on Voltage V
BE(on)
-0.85
-1
V
I
C
=-1A, V
CE
=-2V*
Static Forward Current
Transfer Ratio
h
FE
70
80
40
200
130
80
I
C
=-50mA, V
CE
=-2V*
I
C
=-1A, V
CE
=-2V*
I
C
=-2A, V
CE
=-2V*
FMMT549
100
160
300
I
C
=-500mA, V
CE
=-2V*
FMMT549A
150
200
500
I
C
=-500mA, V
CE
=-2V*
Transition Frequency
f
T
100
MHz
I
C
=-100mA, V
CE
=-5V
f=100MHz
Output Capacitance
C
obo
25
pF
V
CB
=-10V, f=1MHz
Switching Times
t
on
50
ns
I
C
=-500mA, V
CC
=-10V
I
B1
=I
B2
=-50mA
t
off
300
ns
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
FMMT549
FMMT549A
C
B
E
3 - 127
FMMT549
FMMT549A
3 - 128
0.1
1
TYPICAL CHARACTERISTICS
V
CE(sat)
v I
C
I
+
-
Collector Current (Amps)
V
-
(
V
ol
t
s)
Switching Speeds
I
+
-
Collector Current (Amps)
Sw
i
tchi
n
g
ti
m
e
I
+
-
Collector Current (Amps)
I
+
-
Collector Current (Amps)
h
FE
v I
C
V
BE(sat)
v I
C
I
+
-
Collector Current (Amps)
V
BE(on)
v I
C
h
- G
a
i
n
V
- (
V
ol
t
s)
V
-
(V
ol
t
s)
I
B1
=I
B2
=I
C
/10
Single Pulse Test at T
amb
=25C
0.7
0.8
0.9
1.0
0.01
0.001
0.01
10
0.1
1
40
80
120
160
200
0.01
10
0.1
1
I
C
/I
B
=100
0.001
0.01
0.1
1
I
C
/I
B
=10
0.01
0.1
10
1
I
C
/I
B
=100
0.6
V
CE
=2V
I
C
/I
B
=10
I
C
/I
B
=10
0.6
0.8
1.0
1.2
1.4
0.2
0.4
0.6
0.8
0
100
80
60
40
0
20
160
140
120
td,tr,tf
(ns)
180
1000
800
600
400
0
200
1600
1400
1200
ts
(ns)
1800
tr
ts
tf
td
10
1
0.1
Safe Operating Area
V
CE
- Collector Emitter Voltage (V)
10
100
1s
DC
100ms
10ms
100
s
1ms
1
0.01
0.1
10
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