SOT23 PNP SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 3 JANUARY 1996
FEATURES
* 150 Volt V
CEO
* 1 Amp continuous current
COMPLEMENTARY TYPE
FMMT455
PARTMARKING DETAIL
555
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
-160
V
Collector-Emitter Voltage
V
CEO
-150
V
Emitter-Base Voltage
V
EBO
-5
V
Peak Pulse Current
I
CM
-2
A
Continuous Collector Current
I
C
-1
A
Base Current
I
B
-200
mA
Power Dissipation at T
amb
= 25C
P
tot
500
mW
Operating and Storage Temperature Range
T
j:
T
stg
-55 to +150
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
MAX
UNIT
CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
-160
V
I
C
=-100
A
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
-150
V
I
C
=-10mA*
Emitter-Base
Breakdown Voltage
V
(BR)EBO
-5
V
I
E
=-100
A
Collector Cut-Off Current
I
CBO
-0.1
-10
A
A
V
CB
=-140V
V
CB
=-140V, T
amb
=100C
Emitter Cut-Off Current
I
EBO
-0.1
A
V
EB
=-4V
Collector-Emitter
Saturation Voltage
V
CE(sat)
-0.3
V
I
C
=-100mA, I
B
=-10mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
-1
V
I
C
=-100mA, I
B
=-10mA*
Base-Emitter
Turn-on Voltage
V
BE(on)
-1
V
I
C
=-100mA, V
CE
=-10V*
Static Forward Current
Transfer Ratio
h
FE
50
50
300
I
C
=-10mA, V
CE
=-10V*
I
C
=-300mA, V
CE
=-10V*
Transition Frequency
f
T
100
MHz
I
C
=-50mA, V
CE
=-10V
f=100MHz
Output Capacitance
C
obo
10
pF
V
CB
=-10V, f=1MHz
* Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
Spice parameter data is available upon request for this device
FMMT555
C
B
E
SOT23
3 - 131
3 - 132
FMMT555
TYPICAL CHARACTERISTICS
V
CE(sat)
v I
C
I
C
-
Collector Current (Amps)
V
-
(
V
o
lts
)
I
C
-
Collector Current (Amps)
I
C
-
Collector Current (Amps)
h
FE
v I
C
V
BE(sat)
v I
C
I
C
-
Collector Current (Amps)
V
BE(on)
v I
C
h
-
N
or
ma
l
is
ed
G
ai
n
(
%
)
V
-
(
V
ol
ts)
V
-
(
V
ol
ts)
Single Pulse Test at Tamb=25C
20
40
60
80
100
0
-1
-0.2
-0.4
-0.6
-0.8
Switching Speeds
I
C
-
Collector Current (Amps)
Swi
t
chi
ng
t
i
me
-0.0001
-0.001
-0.01
-0.1
I
C
/I
B
=10
V
CE
=-10V
-0.0001
-0.001
1
-0.01
-0.1
3
2
1
4
5
-0.1
-1
0
I
B1
=I
B2
=I
C
/10
-0.01
ZTX5 5 4 /5 5 -2
ts
tf
td
tr
ts
s
tr
ns
300
200
100
400
500
0
tf
ns
600
400
200
800
1000
0
td
ns
100
50
0
-0.6
-0.0001
-0.001
-1
-0.01
-0.1
-0.8
-1.0
-1.2
-1.4
-0.6
-1
-0.0001
-0.001
-0.01
-0.1
I
C
/I
B
=10
-1.0
-1.2
-1.4
-0.8
0
V
CE
=-10V
1
0.1
Safe Operating Area
V
CE
- Collector Emitter Voltage (V)
10V
100V
1s
DC
100ms
10ms
100
s
1ms
1V
0.01
0.001
0.1V
10
1000V
SOT23 PNP SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 3 JANUARY 1996
FEATURES
* 150 Volt V
CEO
* 1 Amp continuous current
COMPLEMENTARY TYPE
FMMT455
PARTMARKING DETAIL
555
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
-160
V
Collector-Emitter Voltage
V
CEO
-150
V
Emitter-Base Voltage
V
EBO
-5
V
Peak Pulse Current
I
CM
-2
A
Continuous Collector Current
I
C
-1
A
Base Current
I
B
-200
mA
Power Dissipation at T
amb
= 25C
P
tot
500
mW
Operating and Storage Temperature Range
T
j:
T
stg
-55 to +150
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
MAX
UNIT
CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
-160
V
I
C
=-100
A
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
-150
V
I
C
=-10mA*
Emitter-Base
Breakdown Voltage
V
(BR)EBO
-5
V
I
E
=-100
A
Collector Cut-Off Current
I
CBO
-0.1
-10
A
A
V
CB
=-140V
V
CB
=-140V, T
amb
=100C
Emitter Cut-Off Current
I
EBO
-0.1
A
V
EB
=-4V
Collector-Emitter
Saturation Voltage
V
CE(sat)
-0.3
V
I
C
=-100mA, I
B
=-10mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
-1
V
I
C
=-100mA, I
B
=-10mA*
Base-Emitter
Turn-on Voltage
V
BE(on)
-1
V
I
C
=-100mA, V
CE
=-10V*
Static Forward Current
Transfer Ratio
h
FE
50
50
300
I
C
=-10mA, V
CE
=-10V*
I
C
=-300mA, V
CE
=-10V*
Transition Frequency
f
T
100
MHz
I
C
=-50mA, V
CE
=-10V
f=100MHz
Output Capacitance
C
obo
10
pF
V
CB
=-10V, f=1MHz
* Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
Spice parameter data is available upon request for this device
FMMT555
C
B
E
SOT23
3 - 131
3 - 132
FMMT555
TYPICAL CHARACTERISTICS
V
CE(sat)
v I
C
I
C
-
Collector Current (Amps)
V
-
(
V
o
lts
)
I
C
-
Collector Current (Amps)
I
C
-
Collector Current (Amps)
h
FE
v I
C
V
BE(sat)
v I
C
I
C
-
Collector Current (Amps)
V
BE(on)
v I
C
h
-
N
or
ma
l
is
ed
G
ai
n
(
%
)
V
-
(
V
ol
ts)
V
-
(
V
ol
ts)
Single Pulse Test at Tamb=25C
20
40
60
80
100
0
-1
-0.2
-0.4
-0.6
-0.8
Switching Speeds
I
C
-
Collector Current (Amps)
Swi
t
chi
ng
t
i
me
-0.0001
-0.001
-0.01
-0.1
I
C
/I
B
=10
V
CE
=-10V
-0.0001
-0.001
1
-0.01
-0.1
3
2
1
4
5
-0.1
-1
0
I
B1
=I
B2
=I
C
/10
-0.01
ZTX5 5 4 /5 5 -2
ts
tf
td
tr
ts
s
tr
ns
300
200
100
400
500
0
tf
ns
600
400
200
800
1000
0
td
ns
100
50
0
-0.6
-0.0001
-0.001
-1
-0.01
-0.1
-0.8
-1.0
-1.2
-1.4
-0.6
-1
-0.0001
-0.001
-0.01
-0.1
I
C
/I
B
=10
-1.0
-1.2
-1.4
-0.8
0
V
CE
=-10V
1
0.1
Safe Operating Area
V
CE
- Collector Emitter Voltage (V)
10V
100V
1s
DC
100ms
10ms
100
s
1ms
1V
0.01
0.001
0.1V
10
1000V
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