SOT23 PNP SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
ISSUE 3 JANUARY 1996
FEATURES
* Excellent h
FE
characteristics at I
C
=100mA
* Low saturation voltages
COMPLEMENTARY TYPE FMMT458
PARTMARKING DETAIL
558
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
-400
V
Collector-Emitter Voltage
V
CEO
-400
V
Emitter-Base Voltage
V
EBO
-5
V
Peak Pulse Current
I
CM
-500
mA
Continuous Collector Current
I
C
-150
mA
Base Current
I
B
-200
mA
Power Dissipation
P
tot
500
mW
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C).
PARAMETER
SYMBOL MIN.
MAX.
UNIT
CONDITIONS.
Collector-Base Breakdown
Voltage
V
(BR)CBO
-400
V
I
C
=-100
A
Collector-Emitter Breakdown
Voltage
V
BR(CEO)
-400
V
I
C
=-10mA*
Emitter-Base Breakdown Voltage
V
(BR)EBO
-5
V
I
E
=-100
A
Collector Cut-Off Current
I
CBO
; I
CES
-100
nA
V
CB
=-320V; V
+-
=320V
Emitter Cut-Off Current
I
EBO
-100
nA
V
EB
=-4V
Collector-Emitter Saturation
Voltage
V
CE(sat)
-0.2
-0.5
V
V
I
C
=-20mA, I
B
=-2mA *
I
C
=-50mA, I
B
=-6mA *
Base-Emitter
Saturation Voltage
V
BE(sat)
-0.9
V
I
C
=-50mA, I
B
=-5mA *
Base-Emitter Turn On Voltage
V
BE(on)
-0.9
V
I
C
=-50mA, V
CE
=-10V *
Static Forward Current Transfer
Ratio
h
FE
100
100
15
300
I
C
=-1mA, V
CE
=-10V
I
C
=-50mA, V
CE
=-10V *
I
C
=-100mA, V
CE
=-10V*
Transition Frequency
f
T
50
MHz
I
C
=-10mA, V
CE
=-20V
f=20MHz
Collector-Base Breakdown
Voltage
C
obo
5
pF
V
CB
=-20V, f=1MHz
Switching times
t
on
t
off
95
1600
ns
ns
I
C
=-50mA, V
CE
=-100V
I
B1
=5mA, I
B2
=-10mA
* Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
Spice parameter data is available upon request for this device
FMMT558
3 - 134
C
B
E
3 - 133
-55C
+25C
+100C
+175C
+100C
+25C
-55C
0.01
0.1
20
1
10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
0.01
0.1
20
1
10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
0.01
0.1
20
1
10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
0.01
0.1
20
1
10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
0.01
0.1
20
1
10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
TYPICAL CHARACTERISTICS
V
CE(sat)
v I
C
I
+
-
Collector Current (Amps)
V
- (V
ol
ts)
V
CE(sat)
v I
C
I
+
-
Collector Current (Amps)
V
- (V
ol
ts)
-55C
+25C
+100C
+175C
I
+
-
Collector Current (Amps)
I
+
-
Collector Current (Amps)
h
FE
v I
C
V
BE(sat)
v I
C
I
+
-
Collector Current (Amps)
V
BE(on)
v I
C
h
- No
rm
al
i
s
e
d Gai
n
V
- (V
ol
ts)
V
- (V
o
l
ts
)
I
C
/I
B
=10
I
C
/I
B
=50
I
C
/I
B
=10
I
C
/I
B
=10
V
CE
=10V
V
CE
=10V
300
200
100
h
-
T
y
pical
G
a
in
0.001
0.001
0.001
0.001
0.001
I
C
/I
B
=20
-55C
+25C
+100C
+175C
1
0.1
Safe Operating Area
V
CE
- Collector Emitter Voltage (V)
10V
100V
1s
DC
100ms
10ms
100
s
1ms
1V
0.01
1000V
0.001
FMMT558
SOT23 PNP SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
ISSUE 3 JANUARY 1996
FEATURES
* Excellent h
FE
characteristics at I
C
=100mA
* Low saturation voltages
COMPLEMENTARY TYPE FMMT458
PARTMARKING DETAIL
558
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
-400
V
Collector-Emitter Voltage
V
CEO
-400
V
Emitter-Base Voltage
V
EBO
-5
V
Peak Pulse Current
I
CM
-500
mA
Continuous Collector Current
I
C
-150
mA
Base Current
I
B
-200
mA
Power Dissipation
P
tot
500
mW
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C).
PARAMETER
SYMBOL MIN.
MAX.
UNIT
CONDITIONS.
Collector-Base Breakdown
Voltage
V
(BR)CBO
-400
V
I
C
=-100
A
Collector-Emitter Breakdown
Voltage
V
BR(CEO)
-400
V
I
C
=-10mA*
Emitter-Base Breakdown Voltage
V
(BR)EBO
-5
V
I
E
=-100
A
Collector Cut-Off Current
I
CBO
; I
CES
-100
nA
V
CB
=-320V; V
+-
=320V
Emitter Cut-Off Current
I
EBO
-100
nA
V
EB
=-4V
Collector-Emitter Saturation
Voltage
V
CE(sat)
-0.2
-0.5
V
V
I
C
=-20mA, I
B
=-2mA *
I
C
=-50mA, I
B
=-6mA *
Base-Emitter
Saturation Voltage
V
BE(sat)
-0.9
V
I
C
=-50mA, I
B
=-5mA *
Base-Emitter Turn On Voltage
V
BE(on)
-0.9
V
I
C
=-50mA, V
CE
=-10V *
Static Forward Current Transfer
Ratio
h
FE
100
100
15
300
I
C
=-1mA, V
CE
=-10V
I
C
=-50mA, V
CE
=-10V *
I
C
=-100mA, V
CE
=-10V*
Transition Frequency
f
T
50
MHz
I
C
=-10mA, V
CE
=-20V
f=20MHz
Collector-Base Breakdown
Voltage
C
obo
5
pF
V
CB
=-20V, f=1MHz
Switching times
t
on
t
off
95
1600
ns
ns
I
C
=-50mA, V
CE
=-100V
I
B1
=5mA, I
B2
=-10mA
* Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
Spice parameter data is available upon request for this device
FMMT558
3 - 134
C
B
E
3 - 133
-55C
+25C
+100C
+175C
+100C
+25C
-55C
0.01
0.1
20
1
10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
0.01
0.1
20
1
10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
0.01
0.1
20
1
10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
0.01
0.1
20
1
10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
0.01
0.1
20
1
10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
TYPICAL CHARACTERISTICS
V
CE(sat)
v I
C
I
+
-
Collector Current (Amps)
V
- (V
ol
ts)
V
CE(sat)
v I
C
I
+
-
Collector Current (Amps)
V
- (V
ol
ts)
-55C
+25C
+100C
+175C
I
+
-
Collector Current (Amps)
I
+
-
Collector Current (Amps)
h
FE
v I
C
V
BE(sat)
v I
C
I
+
-
Collector Current (Amps)
V
BE(on)
v I
C
h
- No
rm
al
i
s
e
d Gai
n
V
- (V
ol
ts)
V
- (V
o
l
ts
)
I
C
/I
B
=10
I
C
/I
B
=50
I
C
/I
B
=10
I
C
/I
B
=10
V
CE
=10V
V
CE
=10V
300
200
100
h
-
T
y
pical
G
a
in
0.001
0.001
0.001
0.001
0.001
I
C
/I
B
=20
-55C
+25C
+100C
+175C
1
0.1
Safe Operating Area
V
CE
- Collector Emitter Voltage (V)
10V
100V
1s
DC
100ms
10ms
100
s
1ms
1V
0.01
1000V
0.001
FMMT558
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