SOT23 PNP SILICON PLANAR MEDIUM
POWER HIGH PERFORMANCE TRANSISTOR
ISSUE 5 - JANUARY 1997
7
FEATURES
* Low equivalent on-resistance; R
CE(sat)
250m
at 1A
PARTMARKING DETAILS -
589
COMPLEMENTARY TYPE -
FMMT489
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
-50
V
Collector-Emitter Voltage
V
CEO
-30
V
Emitter-Base Voltage
V
EBO
-5
V
Peak Pulse Current
I
CM
-2
A
Continuous Collector Current
I
C
-1
A
Base Current
I
B
-200
mA
Power Dissipation at T
amb
=25C
P
tot
500
mW
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C).
PARAMETER
SYMBOL MIN.
MAX.
UNIT
CONDITIONS.
Collector-Base Breakdown
Voltage
V
(BR)CBO
-50
V
I
C
=-100
A
Collector-Emitter Breakdown
Voltage
V
(BR)CEO
-30
V
I
C
=-10mA*
Emitter-Base Breakdown Voltage V
(BR)EBO
-5
V
I
E
=-100
A
Collector Cut-Off Current
I
CBO
-100
nA
V
CB
=-30V
Collector -Emitter Cut-Off
Current
I
CES
-100
nA
V
CES
=-30V
Emitter Cut-Off Current
I
EBO
-100
nA
V
EB
=-4V
Collector-Emitter
Saturation Voltage
V
CE(sat)
-0.25
-0.35
-0.65
V
V
V
I
C
=-0.5A, I
B
=-50mA*
I
C
=-1A, I
B
=-100mA*
I
C
=-2A, I
B
=-200mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
-1.2
V
I
C
=-1A, I
B
=-100mA*
Base-Emitter
Turn-on Voltage
V
BE(on)
-1.1
V
I
C
=-1A, V
CE
=-2V*
Static Forward Current Transfer
Ratio
h
FE
100
100
80
40
300
I
C
=-1mA, V
CE
=-2V*
I
C
=-500mA, V
CE
=-2V*
I
C
=-1A, V
CE
=-2V*
I
C
=-2A, V
CE
=-2V*
Transition Frequency
f
T
100
MHz
I
C
=-100mA, V
CE
=-5V
f=100MHz
Output Capacitance
C
obo
15
pF
V
CB
=-10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
For typical Characteristics graphs see FMMT549 datasheet
FMMT589
C
B
E
3 - 136
PDF 
ZIP