SOT23 PNP SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
ISSUE 3 - OCTOBER 1995
COMPLEMENTARY TYPE FMMT497
PARTMARKING DETAIL - 597
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
-300
V
Collector-Emitter Voltage
V
CEO
-300
V
Emitter-Base Voltage
V
EBO
-5
V
Peak Pulse Current
I
CM
-1
A
Continuous Collector Current
I
C
-0.2
A
Base Current
I
B
-200
mA
Power Dissipation at T
amb
=25C
P
tot
500
mW
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C).
PARAMETER
SYMBOL MIN.
MAX. UNITCONDITIONS.
Collector-Base Breakdown Voltage
V
(BR)CBO
-300
V
I
C
=-100
A
Collector-Emitter Breakdown Voltage
V
(BR)CEO
-300
V
I
C
=-10mA*
Emitter-Base Breakdown Voltage
V
(BR)EBO
-5
V
I
E
=-100
A
Collector Cut-Off Current
I
CBO
-100
nA V
CB
=-250V
Emitter Cut-Off Current
I
EBO
-100
nA V
EB
=-4V
Collector-Emitter Cut-Off Current
I
CES
-100
nA V
CES
=-250V
Emitter Saturation Voltages
V
CE(sat)
-0.25
-0.25
V
V
I
C
=-50mA, I
B
=-5mA
I
C
=-100mA,
I
B
=-20mA*
V
BE(sat)
-1.0
V
I
C
=-100mA,
I
B
=-20mA*
Base-Emitter Turn-on Voltage
V
BE(on)
-0.85 V
I
C
=-100mA,V
CE
=-10V*
Static Forward Current Transfer Ratio h
FE
100
100
100
300
I
C
=-1mA, V
CE
=-10V
I
C
=-50mA,V
CE
=-10V*
I
C
=-100mA,V
CE
=-10V*
Transition Frequency
f
T
75
MHz I
C
=-50mA, V
CE
=-10V
f=100MHz
Output Capacitance
C
obo
10
pF
V
CB
=-10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
Spice parameter data is available upon request for this device
FMMT597
C
B
E
3 - 145
FMMT597
3 - 146
I
C
-Collector Current
V
BE(sat)
v I
C
0
0.2
100mA
10mA
0.4
0.6
0.8
0.9
1A
h
FE
V IC
I
C
-Collector Current
1mA
100mA
10mA
1A
80
0
240
160
320
10mA
1mA
I
C
-Collector Current
V
BE(on)
v I
C
100mA
1A
0.6
0.8
0.9
0.4
0.2
0
I
C
-Collector Current
V
CE(sat)
v I
C
1mA
0
0.1
100mA
10mA
0.2
0.3
0.4
1A
1
0.1
Safe Operating Area
V
CE
- Collector Emitter Voltage (V)
10
100
1
1mA
0.01
0.4
0.6
1A
10mA
100mA
1mA
V
CE(sat)
v I
C
I
C
-Collector Current
0.4
0
0.1
0.5
0.3
0.2
0.6
1000
0.001
+25C
I
+
/I
*
=10
I
+
/I
*
=50
-55 C
+100 C
+25 C
V
+-
=10V
+100 C
+25 C
-55 C
I
+
/I
*
=10
-55 C
+25 C
+100 C
DC
100ms
1s
10ms
1ms
100
s
V
+-
=10V
-55 C
+25 C
+100 C
I
+
/I
*
=10
TYPICAL CHARACTERISTICS
SOT23 PNP SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
ISSUE 3 - OCTOBER 1995
COMPLEMENTARY TYPE FMMT497
PARTMARKING DETAIL - 597
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
-300
V
Collector-Emitter Voltage
V
CEO
-300
V
Emitter-Base Voltage
V
EBO
-5
V
Peak Pulse Current
I
CM
-1
A
Continuous Collector Current
I
C
-0.2
A
Base Current
I
B
-200
mA
Power Dissipation at T
amb
=25C
P
tot
500
mW
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C).
PARAMETER
SYMBOL MIN.
MAX. UNITCONDITIONS.
Collector-Base Breakdown Voltage
V
(BR)CBO
-300
V
I
C
=-100
A
Collector-Emitter Breakdown Voltage
V
(BR)CEO
-300
V
I
C
=-10mA*
Emitter-Base Breakdown Voltage
V
(BR)EBO
-5
V
I
E
=-100
A
Collector Cut-Off Current
I
CBO
-100
nA V
CB
=-250V
Emitter Cut-Off Current
I
EBO
-100
nA V
EB
=-4V
Collector-Emitter Cut-Off Current
I
CES
-100
nA V
CES
=-250V
Emitter Saturation Voltages
V
CE(sat)
-0.25
-0.25
V
V
I
C
=-50mA, I
B
=-5mA
I
C
=-100mA,
I
B
=-20mA*
V
BE(sat)
-1.0
V
I
C
=-100mA,
I
B
=-20mA*
Base-Emitter Turn-on Voltage
V
BE(on)
-0.85 V
I
C
=-100mA,V
CE
=-10V*
Static Forward Current Transfer Ratio h
FE
100
100
100
300
I
C
=-1mA, V
CE
=-10V
I
C
=-50mA,V
CE
=-10V*
I
C
=-100mA,V
CE
=-10V*
Transition Frequency
f
T
75
MHz I
C
=-50mA, V
CE
=-10V
f=100MHz
Output Capacitance
C
obo
10
pF
V
CB
=-10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
Spice parameter data is available upon request for this device
FMMT597
C
B
E
3 - 145
FMMT597
3 - 146
I
C
-Collector Current
V
BE(sat)
v I
C
0
0.2
100mA
10mA
0.4
0.6
0.8
0.9
1A
h
FE
V IC
I
C
-Collector Current
1mA
100mA
10mA
1A
80
0
240
160
320
10mA
1mA
I
C
-Collector Current
V
BE(on)
v I
C
100mA
1A
0.6
0.8
0.9
0.4
0.2
0
I
C
-Collector Current
V
CE(sat)
v I
C
1mA
0
0.1
100mA
10mA
0.2
0.3
0.4
1A
1
0.1
Safe Operating Area
V
CE
- Collector Emitter Voltage (V)
10
100
1
1mA
0.01
0.4
0.6
1A
10mA
100mA
1mA
V
CE(sat)
v I
C
I
C
-Collector Current
0.4
0
0.1
0.5
0.3
0.2
0.6
1000
0.001
+25C
I
+
/I
*
=10
I
+
/I
*
=50
-55 C
+100 C
+25 C
V
+-
=10V
+100 C
+25 C
-55 C
I
+
/I
*
=10
-55 C
+25 C
+100 C
DC
100ms
1s
10ms
1ms
100
s
V
+-
=10V
-55 C
+25 C
+100 C
I
+
/I
*
=10
TYPICAL CHARACTERISTICS
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