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Электронный компонент: FMMT614

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SOT23 NPN SILICON PLANAR MEDIUM
POWER DARLINGTON TRANSISTOR
ISSUE 3 APRIL 1996
FEATURES
* h
FE
up to 5k at I
c
= 500mA
* Fast switching
* Low V
CE(sat)
at High I
c
PARTMARKING DETAILS 614
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
120
V
Collector-Emitter Voltage
V
CEO
100
V
Emitter-Base Voltage
V
EBO
10
V
Peak Pulse Current
I
CM
2
A
Continuous Collector Current
I
C
500
mA
Power Dissipation at T
amb
=25C
P
tot
500
mW
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C).
PARAMETER
SYMBOL MIN.
TYP.
MAX.
UNIT
CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
120
300
V
I
C
=10
A, I
E
=0
Collector-Emitter
Sustaining Voltage
V
CEO(sus)
100
130
V
I
C
=10mA, I
B
=0*
Emitter-Base
Breakdown Voltage
V
(BR)EBO
10
14
V
I
E
=10
A, I
C
=0
Collector Cut-Off Current I
CBO
0.02
10
nA
V
CB
=100V, I
E
=0
Collector Cut-Off Current I
CES
10
A
V
CES
=100V, I
E
=0
Emitter Cut-Off Current
I
EBO
100
nA
V
EB
=8V, I
C
=0
Collector-Emitter
Saturation Voltage
V
CE(sat)
0.9
0.78
1.0
0.9
V
V
I
C
=500mA, I
B
=5mA*
I
C
=100mA, I
B
=0.1mA
Base-Emitter Saturation
Voltage
V
BE(sat)
1.7
1.9
V
I
C
=500mA, I
B
=5mA*
Base-Emitter
Turn-On Voltage
V
BE(on)
1.5
1.8
V
I
C
=500mA, V
CE
=5V*
Static Forward Current
Transfer Ratio
h
FE
15K
5K
I
C
=100mA, V
CE
=5V*
I
C
=500mA, V
CE
=5V*
Output Capacitance
C
obo
6
pF
V
CB
=10V, f=100mHz
Switching Times
t
on
0.7
s
I
C
=100
A, I
B
=0.1mA
V
S
=10V
t
off
2.5
s
*Measured under pulsed conditions. Pulse Width=300
s. Duty cycle
2%
Spice parameter data is available upon request for this device
Typical Characteristics graphs are in preparation. Contact your local Sales office for more information.
FMMT614
C
B
E
3 - 147
FMMT614
1m
100m
10
1m
100m
10
1m
100m
10
10m
1
100
10
100m
1m
1m
100m
10
I
C
- Collector Current (A)
V
CE(sat)
v I
C
0
1
2
I
+
/I
*
=1000
I
+
/I
*
=2000
I
+
/I
*
=5000
+25C
-55C
75k
+100C
0
I
C
- Collector Current (A)
h
FE
v I
C
+25C
+100C
2
1
-55C
0
I
C
- Collector Current (A)
V
BE(on)
v I
C
+100C
+150C
2
1
+25C
0
I
C
- Collector Current (A)
V
CE(sat)
v I
C
+100C
+150C
2.4
1.2
+25C
0
I
C
- Collector Current (A)
V
BE(sat)
v IC
1s
100ms
10
0.1
DC
0.001
V
CE
- Collector Emitter Voltage (V)
Safe Operating Area
10ms
1ms
100
s
+150C
V
+-
=5V
+25C
-55C
I
+
/I
*
=1000
V
+-
=5V
-55C
I
+
/I
*
=1000
100m
10
0.01
1
10m
1
10m
1
10m
1
10m
1
10m
1
25k
50k
TYPICAL CHARACTERISTICS
PAGE NUMBER
SOT23 NPN SILICON PLANAR MEDIUM
POWER DARLINGTON TRANSISTOR
ISSUE 3 APRIL 1996
FEATURES
* h
FE
up to 5k at I
c
= 500mA
* Fast switching
* Low V
CE(sat)
at High I
c
PARTMARKING DETAILS 614
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
120
V
Collector-Emitter Voltage
V
CEO
100
V
Emitter-Base Voltage
V
EBO
10
V
Peak Pulse Current
I
CM
2
A
Continuous Collector Current
I
C
500
mA
Power Dissipation at T
amb
=25C
P
tot
500
mW
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C).
PARAMETER
SYMBOL MIN.
TYP.
MAX.
UNIT
CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
120
300
V
I
C
=10
A, I
E
=0
Collector-Emitter
Sustaining Voltage
V
CEO(sus)
100
130
V
I
C
=10mA, I
B
=0*
Emitter-Base
Breakdown Voltage
V
(BR)EBO
10
14
V
I
E
=10
A, I
C
=0
Collector Cut-Off Current I
CBO
0.02
10
nA
V
CB
=100V, I
E
=0
Collector Cut-Off Current I
CES
10
A
V
CES
=100V, I
E
=0
Emitter Cut-Off Current
I
EBO
100
nA
V
EB
=8V, I
C
=0
Collector-Emitter
Saturation Voltage
V
CE(sat)
0.9
0.78
1.0
0.9
V
V
I
C
=500mA, I
B
=5mA*
I
C
=100mA, I
B
=0.1mA
Base-Emitter Saturation
Voltage
V
BE(sat)
1.7
1.9
V
I
C
=500mA, I
B
=5mA*
Base-Emitter
Turn-On Voltage
V
BE(on)
1.5
1.8
V
I
C
=500mA, V
CE
=5V*
Static Forward Current
Transfer Ratio
h
FE
15K
5K
I
C
=100mA, V
CE
=5V*
I
C
=500mA, V
CE
=5V*
Output Capacitance
C
obo
6
pF
V
CB
=10V, f=100mHz
Switching Times
t
on
0.7
s
I
C
=100
A, I
B
=0.1mA
V
S
=10V
t
off
2.5
s
*Measured under pulsed conditions. Pulse Width=300
s. Duty cycle
2%
Spice parameter data is available upon request for this device
Typical Characteristics graphs are in preparation. Contact your local Sales office for more information.
FMMT614
C
B
E
3 - 147
FMMT614
1m
100m
10
1m
100m
10
1m
100m
10
10m
1
100
10
100m
1m
1m
100m
10
I
C
- Collector Current (A)
V
CE(sat)
v I
C
0
1
2
I
+
/I
*
=1000
I
+
/I
*
=2000
I
+
/I
*
=5000
+25C
-55C
75k
+100C
0
I
C
- Collector Current (A)
h
FE
v I
C
+25C
+100C
2
1
-55C
0
I
C
- Collector Current (A)
V
BE(on)
v I
C
+100C
+150C
2
1
+25C
0
I
C
- Collector Current (A)
V
CE(sat)
v I
C
+100C
+150C
2.4
1.2
+25C
0
I
C
- Collector Current (A)
V
BE(sat)
v IC
1s
100ms
10
0.1
DC
0.001
V
CE
- Collector Emitter Voltage (V)
Safe Operating Area
10ms
1ms
100
s
+150C
V
+-
=5V
+25C
-55C
I
+
/I
*
=1000
V
+-
=5V
-55C
I
+
/I
*
=1000
100m
10
0.01
1
10m
1
10m
1
10m
1
10m
1
10m
1
25k
50k
TYPICAL CHARACTERISTICS
PAGE NUMBER