SuperSOT
SOT23 NPN SILICON POWER
(SWITCHING) TRANSISTORS
ISSUE 3 - NOVEMBER 1995
FEATURES
* 625mW POWER DISSIPATION
* I
C
CONT 3A
* 12A Peak Pulse Current
* Excellent H
FE
Characteristics Up To 12A (pulsed)
* Extremely Low Saturation Voltage E.g. 8mV Typ.
* Extremely Low Equivalent On Resistance; R
CE(sat)
DEVICE TYPE
COMPLEMENT
PARTMARKING
R
CE(sat)
FMMT617
FMMT717
617
50m
at 3A
FMMT618
FMMT718
618
50m
at 2A
FMMT619
FMMT720
619
75m
at 2A
FMMT624
FMMT723
624
-
FMMT625
625
-
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
FMMT
617
FMMT
618
FMMT
619
FMMT
624
FMMT
625
UNIT
Collector-Base Voltage
V
CBO
15
20
50
125
150
V
Collector-Emitter Voltage
V
CEO
15
20
50
125
150
V
Emitter-Base Voltage
V
EBO
5
5
5
5
5
V
Peak Pulse Current**
I
CM
12
6
6
3
3
A
Continuous Collector Current
I
C
3
2.5
2
1
1
A
Base Current
I
B
500
mA
Power Dissipation at T
amb
=25C*
P
tot
625
mW
Operating and Storage Temperature
Range
T
j
:T
stg
-55 to +150
C
* Maximum power dissipation is calculated assuming that the device is mounted on a ceramic
substrate measuring 15x15x0.6mm
**Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
Spice parameter data is available upon request for these devices
C
B
E
FMMT617 FMMT618
FMMT619 FMMT624
FMMT625
3 - 149
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
TYP.
MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
15
70
V
I
C
=100
A
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
15
18
V
I
C
=10mA*
Emitter-Base
Breakdown Voltage
V
(BR)EBO
5
8.2
V
I
E
=100
A
Collector Cut-Off
Current
I
CBO
100
nA
V
CB
=10V
Emitter Cut-Off Current I
EBO
100
nA
V
EB
=4V
Collector Emitter
Cut-Off Current
I
CES
100
nA
V
CES
=10V
Collector-Emitter
Saturation Voltage
V
CE(sat)
8
70
150
14
100
200
mV
mV
mV
I
C
=0.1A, I
B
=10mA*
I
C
=1A, I
B
=10mA*
I
C
=3A, I
B
=50mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
0.9
1.0
V
I
C
=3A, I
B
=50mA*
Base-Emitter Turn-On
Voltage
V
BE(on)
0.84
1.0
V
I
C
=3A, V
CE
=2V*
Static Forward Current
Transfer
Ratio
h
FE
200
300
200
150
415
450
320
240
80
I
C
=10mA, V
CE
=2V*
I
C
=200mA, V
CE
=2V*
I
C
=3A, V
CE
=2V*
I
C
=5A, V
CE
=2V*
I
C
=12A, V
CE
=2V*
Transition
Frequency
f
T
80
120
MHz
I
C
=50mA, V
CE
=10V
f=50MHz
Output Capacitance
C
obo
30
40
pF
V
CB
=10V, f=1MHz
Turn-On Time
t
(on)
120
ns
V
CC
=10V, I
C
=3A
I
B1
=I
B2
=50mA
Turn-Off Time
t
(off)
160
ns
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
FMMT617
100C
-55C
25C
0.0
0.2
0.4
0.6
0.8
1.0
1.2
Collector Current
I
+
/I
*
=60
Collector Current
Collector Current
Collector Current
25C
100C
-55C
I
+
/I
*
=60
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
450
225
25C
100C
-55C
V
+-
=2V
0.2
0.0
1.0
0.8
0.6
0.4
SINGLE PULSE TEST T
amb
= 25 deg C
V
CE
(VOLTS)
Safe Operating Area
TYPICAL CHARACTERISTICS
100A
1mA
10mA
100mA
1A
10A
10A
1A
100mA
10mA
1mA
100A
1.4
1mA
10mA
100mA
1A
10A
100A
1.2
1mA
10mA
100A
100mA
1A
10A
0.4
0.3
0.2
0.1
0.0
V
+-
=2V
100C
25C
-55C
1.4
0.1
1.0
10
100
0.01
0.1
1.0
10
D.C.
1s
100ms
10ms
1ms
100
s
1m
100m
10
I
C
- Collector Current (A)
V
CE(SAT)
v I
C
1m
1
I
+
/I
*
=100
I
+
/I
*
=60
I
+
/I
*
=10
+25 C
10m
100m
10m
1
V
CE(SAT)
vs I
C
V
BE(SAT)
vs I
C
h
FE
vs I
C
V
BE(ON)
vs I
C
FMMT617
3 - 151
3 - 150
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
TYP.
MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
15
70
V
I
C
=100
A
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
15
18
V
I
C
=10mA*
Emitter-Base
Breakdown Voltage
V
(BR)EBO
5
8.2
V
I
E
=100
A
Collector Cut-Off
Current
I
CBO
100
nA
V
CB
=10V
Emitter Cut-Off Current I
EBO
100
nA
V
EB
=4V
Collector Emitter
Cut-Off Current
I
CES
100
nA
V
CES
=10V
Collector-Emitter
Saturation Voltage
V
CE(sat)
8
70
150
14
100
200
mV
mV
mV
I
C
=0.1A, I
B
=10mA*
I
C
=1A, I
B
=10mA*
I
C
=3A, I
B
=50mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
0.9
1.0
V
I
C
=3A, I
B
=50mA*
Base-Emitter Turn-On
Voltage
V
BE(on)
0.84
1.0
V
I
C
=3A, V
CE
=2V*
Static Forward Current
Transfer
Ratio
h
FE
200
300
200
150
415
450
320
240
80
I
C
=10mA, V
CE
=2V*
I
C
=200mA, V
CE
=2V*
I
C
=3A, V
CE
=2V*
I
C
=5A, V
CE
=2V*
I
C
=12A, V
CE
=2V*
Transition
Frequency
f
T
80
120
MHz
I
C
=50mA, V
CE
=10V
f=50MHz
Output Capacitance
C
obo
30
40
pF
V
CB
=10V, f=1MHz
Turn-On Time
t
(on)
120
ns
V
CC
=10V, I
C
=3A
I
B1
=I
B2
=50mA
Turn-Off Time
t
(off)
160
ns
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
FMMT617
100C
-55C
25C
0.0
0.2
0.4
0.6
0.8
1.0
1.2
Collector Current
I
+
/I
*
=60
Collector Current
Collector Current
Collector Current
25C
100C
-55C
I
+
/I
*
=60
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
450
225
25C
100C
-55C
V
+-
=2V
0.2
0.0
1.0
0.8
0.6
0.4
SINGLE PULSE TEST T
amb
= 25 deg C
V
CE
(VOLTS)
Safe Operating Area
TYPICAL CHARACTERISTICS
100A
1mA
10mA
100mA
1A
10A
10A
1A
100mA
10mA
1mA
100A
1.4
1mA
10mA
100mA
1A
10A
100A
1.2
1mA
10mA
100A
100mA
1A
10A
0.4
0.3
0.2
0.1
0.0
V
+-
=2V
100C
25C
-55C
1.4
0.1
1.0
10
100
0.01
0.1
1.0
10
D.C.
1s
100ms
10ms
1ms
100
s
1m
100m
10
I
C
- Collector Current (A)
V
CE(SAT)
v I
C
1m
1
I
+
/I
*
=100
I
+
/I
*
=60
I
+
/I
*
=10
+25 C
10m
100m
10m
1
V
CE(SAT)
vs I
C
V
BE(SAT)
vs I
C
h
FE
vs I
C
V
BE(ON)
vs I
C
FMMT617
3 - 151
3 - 150
DERATING CURVE
* Reference above figures, Devices were mounted on a 15mmx15mm ceramic substrate
MAXIMUM TRANSIENT THERMAL RESISTANCE
FMMT617 FMMT624
FMMT618 FMMT625
FMMT619
THERMAL CHARACTERISTICS AND DERATING INFORMATION
FMMT717 FMMT722
FMMT718 FMMT723
FMMT720
SuperSOT Series
3 - 158
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