SuperSOT
SOT23 NPN SILICON POWER
(SWITCHING) TRANSISTORS
ISSUE 3 - NOVEMBER 1995
FEATURES
* 625mW POWER DISSIPATION
* I
C
CONT 3A
* 12A Peak Pulse Current
* Excellent H
FE
Characteristics Up To 12A (pulsed)
* Extremely Low Saturation Voltage E.g. 8mV Typ.
* Extremely Low Equivalent On Resistance; R
CE(sat)
DEVICE TYPE
COMPLEMENT
PARTMARKING
R
CE(sat)
FMMT617
FMMT717
617
50m
at 3A
FMMT618
FMMT718
618
50m
at 2A
FMMT619
FMMT720
619
75m
at 2A
FMMT624
FMMT723
624
-
FMMT625
625
-
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
FMMT
617
FMMT
618
FMMT
619
FMMT
624
FMMT
625
UNIT
Collector-Base Voltage
V
CBO
15
20
50
125
150
V
Collector-Emitter Voltage
V
CEO
15
20
50
125
150
V
Emitter-Base Voltage
V
EBO
5
5
5
5
5
V
Peak Pulse Current**
I
CM
12
6
6
3
3
A
Continuous Collector Current
I
C
3
2.5
2
1
1
A
Base Current
I
B
500
mA
Power Dissipation at T
amb
=25C*
P
tot
625
mW
Operating and Storage Temperature
Range
T
j
:T
stg
-55 to +150
C
* Maximum power dissipation is calculated assuming that the device is mounted on a ceramic
substrate measuring 15x15x0.6mm
**Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
Spice parameter data is available upon request for these devices
C
B
E
FMMT617 FMMT618
FMMT619 FMMT624
FMMT625
3 - 149
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
PARAMETER
SYMBOL
FMMT618
FMMT619
UNIT CONDITIONS.
MIN. TYP. MAX. MIN. TYP. MAX.
Collector-Base
Breakdown Voltage
V
(BR)CBO
20
100
50
190
V
I
C
=100
A
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
20
27
50
65
V
I
C
=10mA*
Emitter-Base
Breakdown Voltage
V
(BR)EBO
5
8.3
5
8.3
V
I
E
=100
A
Collector Cut-Off
Current
I
CBO
100
100
nA
nA
V
CB
=16V
V
CB
=40V
Emitter Cut-Off
Current
I
EBO
100
100
nA
V
EB
=4V
Collector Emitter
Cut-Off Current
I
CES
100
100
nA
nA
V
CES
=16V
V
CES
=40V
Collector-Emitter
Saturation Voltage
V
CE(sat)
8
70
130
15
150
200
10
125
150
20
200
220
mV
mV
mV
mV
I
C
=0.1A, I
B
=10mA*
I
C
=1A, I
B
=10mA*
I
C
=2A, I
B
=50mA*
I
C
=2.5A, I
B
=50mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
0.89
1.0
0.87
1.0
V
V
I
C
=2A, I
B
=50mA*
I
C
=2.5A, I
B
=50mA*
Base-Emitter
Turn-On Voltage
V
BE(on)
0.79
1.0
0.80
1.0
V
V
I
C
=2A, V
CE
=2V*
I
C
=2.5A, V
CE
=2V*
Static Forward
Current Transfer
Ratio
h
FE
200
300
200
100
400
450
360
180
200
300
200
100
400
450
400
225
40
I
C
=10mA, V
CE
=2V*
I
C
=200mA, V
CE
=2V*
I
C
=1A, V
CE
=2V*
I
C
=2A, V
CE
=2V*
I
C
=6A, V
CE
=2V*
Transition
Frequency
f
T
100
140
100
165
MHz
I
C
=50mA, V
CE
=10V
f=100MHz
Output Capacitance C
obo
23
30
12
20
pF
V
CB
=10V, f=1MHz
Turn-On Time
t
(on)
170
170
ns
V
CC
=10V, I
C
=1A
I
B1
=-I
B2
=10mA
Turn-Off Time
t
(off)
400
750
ns
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
FMMT618
FMMT619
FMMT618
3 - 152
3 - 153
-55C
100C
25C
0.0
0.2
0.4
0.6
0.8
1.0
1.2
Collector Current
I
+
/I
*
=50
Collector Current
Collector Current
Collector Current
25C
100C
-55C
0.0
0.4
0.1
0.2
0.3
25C
100C
-55C
I
+
/I
*
=50
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
+-
=2V
0
450
225
25C
100C
-55C
V
+-
=2V
0.2
0.0
1.0
0.8
0.6
0.4
D.C.
1s
100ms
10ms
1ms
100
s
10
1.0
0.1
0.01
SINGLE PULSE TEST T
amb
= 25 deg C
V
CE
(VOLTS)
Safe Operating Area
TYPICAL CHARACTERISTICS
0.1
10A
1mA
10A
1mA
10A
10A
1mA
1
100m
10m
1m
1m
10m
100m
1
10
I
C
- Collector Current (A)
V
CE(SAT)
v I
C
I
+
/I
*
=10
I
+
/I
*
=50
I
+
/I
*
=100
+25 C
V
CE(SAT)
vs I
C
V
BE(SAT)
vs I
C
h
FE
vs I
C
V
BE(ON)
vs I
C
1mA
10mA
100mA
1A
10mA
100mA
1A
10mA
100mA
1A
10mA
100mA
1A
1
10
100
0.0
0.2
0.4
0.6
0.8
1.0
1.2
Collector Current
I
+
/I
*
=40
Collector Current
10A
Collector Current
Collector Current
0.0
I
+
/I
*
=40
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
+-
=2V
0
450
225
V
+-
=2V
0.2
0.0
1.0
0.8
0.6
0.4
10
1.0
0.1
0.01
SINGLE PULSE TEST T
amb
= 25 deg C
V
CE
(VOLTS)
TYPICAL CHARACTERISTICS
0.2
0.4
0.6
-55C
100C
25C
25C
100C
-55C
25C
100C
-55C
25C
100C
-55C
D.C.
1s
100ms
10ms
1ms
100
s
0.1
10A
1mA
10A
1mA
10A
1mA
10A
1mA
Safe Operating Area
1
100m
10m
1m
1m
10m
100m
1
10
I
C
- Collector Current (A)
V
CE(sat)
v I
C
I
+
/I
*
=10
I
+
/I
*
=50
I
+
/I
*
=100
+25C
V
CE(SAT)
vs I
C
V
BE(SAT)
vs I
C
H
FE
vs I
C
V
BE(ON)
vs I
C
10mA
100mA
1A
10mA
100mA
1A
10mA
100mA
1A
10mA
100mA
1A
1
10
100
FMMT619
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
PARAMETER
SYMBOL
FMMT624
FMMT625
UNIT CONDITIONS.
MIN. TYP. MAX. MIN. TYP. MAX.
Collector-Base
Breakdown Voltage
V
(BR)CBO
125
250
150
300
V
I
C
=100
A
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
125
160
150
175
V
I
C
=10mA*
Emitter-Base
Breakdown Voltage
V
(BR)EBO
5
8.3
5
8.3
V
I
E
=100
A
Collector Cut-Off
Current
I
CBO
100
100
nA
nA
V
CB
=100V
V
CB
=130V
Emitter Cut-Off
Current
I
EBO
100
100
nA
V
EB
=4V
Collector Emitter
Cut-Off Current
I
CES
100
100
nA
nA
V
CES
=100V
V
CES
=130V
Collector-Emitter
Saturation Voltage
V
CE(SAT)
26
70
160
165
50
150
220
250
26
110
180
50
200
300
mV
mV
mV
mV
mV
I
C
=0.1A, I
B
=10mA*
I
C
=0.1A, I
B
=1mA*
I
C
=0.5A, I
B
=50mA*
I
C
=0.5A, I
B
=10mA*
I
C
=1A, I
B
=50mA*
Base-Emitter
Saturation Voltage
V
BE(SAT)
0.85
1.0
0.85
1.0
V
I
C
=1A, I
B
=50mA*
Base-Emitter
Turn-On Voltage
V
BE(ON)
0.7
1.0
0.74
1.0
V
I
C
=1A, V
CE
=10V*
Static Forward
Current Transfer
Ratio
h
FE
200
300
100
400
450
140
18
200
300
30
400
450
45
15
I
C
=10mA, V
CE
=10V*
I
C
=0.2A, V
CE
=10V*
I
C
=1A, V
CE
=10V*
I
C
=3A, V
CE
=10V*
Transition
Frequency
f
T
100
155
100
135
MHz
I
C
=50mA, V
CE
=10V
f=100MHz
Output Capacitance C
OBO
7
15
6
10
pF
V
CB
=10V, f=1MHz
Turn-On Time
t
(ON)
60
160
ns
V
CC
=50V, I
C
=0.5A
I
B1
=-I
B2
=50mA
Turn-Off Time
t
(OFF)
1300
1500
ns
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
FMMT624
FMMT625
3 - 154
3 - 155
DERATING CURVE
* Reference above figures, Devices were mounted on a 15mmx15mm ceramic substrate
MAXIMUM TRANSIENT THERMAL RESISTANCE
FMMT617 FMMT624
FMMT618 FMMT625
FMMT619
THERMAL CHARACTERISTICS AND DERATING INFORMATION
FMMT717 FMMT722
FMMT718 FMMT723
FMMT720
SuperSOT Series
3 - 158
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