ISSUE 1 - JANUARY 2001
FMMT620
1
SuperSOTTM
80V NPN SILICON LOW SATURATION TRANSISTOR
C
E
B
SUMMARY
V
CEO
=80V; R
SAT
= 90m ; I
C
= 0.5A
DESCRIPTION
Enhancing the existing SuperSOT range this 80V NPN transistor utilises the
Zetex matrix structure combined with advanced assembly techniques. Users
are provided with high Hfe and very low sat performance ensuring low on
state losses.
FEATURES
Extremely Low Equivalent On Resistance
Extremely Low Saturation Voltage
h
FE
characterised up to 3.0A
I
C
=1.5A Continuous Collector Current
SOT23 package
APPLICATIONS
DC - DC Modules
Power Management Functions
CCFL Backlighting Inverters
Motor control and drive functions
ORDERING INFORMATION
DEVICE
REEL SIZE
(inches)
TAPE WIDTH
(mm)
QUANTITY
PER REEL
FMMT620TA
7
8mm embossed
3000 units
FMMT620TC
13
8mm embossed
10000 units
DEVICE MARKING
620
Top View
SOT23
ISSUE 1 - JANUARY 2001
FMMT620
2
THERMAL RESISTANCE
PARAMETER
SYMBOL
VALUE
UNIT
Junction to Ambient (a)
R
JA
200
C/W
Junction to Ambient (b)
R
JA
155
C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t 5 secs.
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
LIMIT
UNIT
Collector-Base Voltage
V
CBO
80
V
Collector-Emitter Voltage
V
CEO
80
V
Emitter-Base Voltage
V
EBO
5
V
Peak Pulse Current
I
CM
5
A
Continuous Collector Current
I
C
1.5
A
Base Current
I
B
500
mA
Power Dissipation at TA=25C (a)
Linear Derating Factor
P
D
625
5
mW
mW/C
Power Dissipation at TA=25C (b)
Linear Derating Factor
P
D
806
6.4
mW
mW/C
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
C
ISSUE 1 - JANUARY 2001
FMMT620
3
TYPICAL CHARACTERISTICS
ISSUE 1 - JANUARY 2001
FMMT620
4
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS.
Collector-Base Breakdown
Voltage
V
(BR)CBO
100
180
V
I
C
=100 A
Collector-Emitter Breakdown
Voltage
V
(BR)CEO
80
110
V
I
C
=10mA*
Emitter-Base Breakdown Voltage
V
(BR)EBO
7
8
V
I
E
=100 A
Collector Cut-Off Current
I
CBO
100
nA
V
CB
=80V
Emitter Cut-Off Current
I
EBO
100
nA
V
EB
=5.5V
Collector Emitter Cut-Off Current
I
CES
100
nA
V
CES
=80V
Collector-Emitter Saturation
Voltage
V
CE(sat)
15
45
145
160
20
60
185
200
mV
mV
mV
mV
I
C
=0.1A, I
B
=10mA*
I
C
=0.5A, I
B
=50mA*
I
C
=1A, I
B
=20mA*
I
C
=1.5A, I
B
=50mA*
Base-Emitter Saturation Voltage
V
BE(sat)
0.86
1.0
V
I
C
=1.5A, I
B
=50mA*
Base-Emitter Turn-On Voltage
V
BE(on)
0.82
0.95
V
I
C
=1.5A, V
CE
=2V*
Static Forward Current Transfer
Ratio
h
FE
200
300
110
60
20
450
450
170
90
30
10
900
I
C
=10mA, V
CE
=2V*
I
C
=200mA, V
CE
=2V*
I
C
=1A, V
CE
=2V*
I
C
=1.5A, V
CE
=2V*
I
C
=3A, V
CE
=2V*
I
C
=5A, V
CE
=2V*
Transition Frequency
f
T
100
160
MHz
I
C
=50mA, V
CE
=10V
f=100MHz
Output Capacitance
C
obo
11.5
18
pF
V
CB
=10V, f=1MHz
Turn-On Time
t
(on)
86
ns
V
CC
=10V, I
C
=500mA
I
B1
=I
B2
=25mA
Turn-Off Time
t
(off)
1128
ns
*Measured under pulsed conditions. Pulse width
300
s. Duty cycle
2%
ISSUE 1 - JANUARY 2001
FMMT620
5
TYPICAL CHARACTERISTICS
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